collect
Abstract: MUN5211 MUN5212 MUN5213 MUN5214 MUN5215 MUN5216 MUN5230 MUN5231 MUN5232
Text: MUN5211 Series NPN Silicon Bias Resistor Transistor 3 P b Lead Pb -Free R1 1 R2 2 SOT-323(SC-70) Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO Value 50 VCBO
|
Original
|
PDF
|
MUN5211
OT-323
SC-70)
30-Dec-05
OT-323
collect
MUN5212
MUN5213
MUN5214
MUN5215
MUN5216
MUN5230
MUN5231
MUN5232
|
Untitled
Abstract: No abstract text available
Text: MUN5211 Series NPN Silicon Bias Resistor Transistor 3 * “G” Lead Pb -Free R1 1 R2 2 SOT-323(SC-70) Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO Value
|
Original
|
PDF
|
MUN5211
OT-323
SC-70)
OT-323
|
MUN5111
Abstract: MUN5111DW MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132
Text: MUN5111DW Series Dual Bias Resistor Transistor PNP Silicon 6 5 R1 Q2 R2 1 4 6 5 R2 1 Q1 R1 2 2 4 3 SOT-363 SC-88 3 M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol
|
Original
|
PDF
|
MUN5111DW
OT-363
SC-88)
20-Jan-09
MUN5111
OT-363
MUN5112
MUN5113
MUN5114
MUN5115
MUN5116
MUN5130
MUN5131
MUN5132
|
6a mun2111
Abstract: MUN2112 MUN2111 transistor mun2111 MUN2114 MUN2115 MUN2116 MUN2130 MUN2131 MUN2132
Text: MUN2111 Series Bias Resistor Transistor PNP Silicon COLLECTOR 3 3 R1 1 BASE 2 R2 1 2 EMITTER SC-59 Maximum Ratings TA=25 C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO 50 Collector-Base Voltage VCBO 50 Vdc Vdc IC 100 mAdc Rating
|
Original
|
PDF
|
MUN2111
SC-59
SC-59
6a mun2111
MUN2112
transistor mun2111
MUN2114
MUN2115
MUN2116
MUN2130
MUN2131
MUN2132
|
MUN2111
Abstract: MUN2112 MUN2113 MUN2114 MUN2115 MUN2116 MUN2130 MUN2131 MUN2132
Text: MUN2111 Series Bias Resistor Transistor PNP Silicon COLLECTOR 3 3 R1 1 BASE 1 R2 2 2 EMITTER SC-59 Maximum Ratings TA=25 C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO 50 Collector-Base Voltage VCBO 50 Vdc Vdc IC 100 mAdc Rating
|
Original
|
PDF
|
MUN2111
SC-59
SC-59
MUN2112
MUN2113
MUN2114
MUN2115
MUN2116
MUN2130
MUN2131
MUN2132
|
50K MARKING SOT23
Abstract: No abstract text available
Text: MMBTA70LT1 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SIGNAL TRANSISTORS ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Package:SOT-23 Shandong Yiguang Electronic Joint stock Co., Ltd Characteristic Symbol Rating Unit Collector-Emitter Voltage
|
Original
|
PDF
|
MMBTA70LT1
OT-23
50K MARKING SOT23
|
Untitled
Abstract: No abstract text available
Text: General Purpose Transistor PNP Silicon MMBTA70LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS CASE 318–08, STYLE 6 Rating Symbol Value Unit Collector–Emitter Voltage V CEO –40 Vdc Emitter–Base Voltage V EBO –4.0 Vdc –100 mAdc Collector Current — Continuous
|
Original
|
PDF
|
MMBTA70LT1
236AB)
|
Untitled
Abstract: No abstract text available
Text: BCW29/30LT1 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SIGNAL TRANSISTORS ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Package:SOT-23 Shandong Yiguang Electronic Joint stock Co., Ltd Characteristic Symbol Rating Unit Collector-Base Voltage
|
Original
|
PDF
|
BCW29/30LT1
OT-23
|
TW88
Abstract: MUN5111 MUN5111DW MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131
Text: MUN5111DW Series 6 Dual Bias Resistor Transistor PNP Silicon 5 4 R1 Q2 6 5 1 Q1 R2 2 2 3 SOT-363 SC-88 R1 1 4 R2 3 M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol
|
Original
|
PDF
|
MUN5111DW
OT-363
SC-88)
20-Jan-09
MUN5111
OT-363
TW88
MUN5112
MUN5113
MUN5114
MUN5115
MUN5116
MUN5130
MUN5131
|
BCW60ALT1
Abstract: No abstract text available
Text: BCW60LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Collector Current: Ic= 100mA * High Total Power Dissipation:Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃
|
Original
|
PDF
|
BCW60LT1
100mA
225mW
OT-23
BCW60ALT1
|
transistor M7A
Abstract: M7A transistor
Text: General Purpose Transistors PNP Silicon 3 COLLECTOR BCW29LT1 BCW30LT1 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –32 Vdc Collector–Base Voltage V CBO –32 Vdc Emitter–Base Voltage V –5.0 Vdc –100
|
Original
|
PDF
|
BCW29LT1
BCW30LT1
236AB)
BCW29LT1
transistor M7A
M7A transistor
|
BCW29
Abstract: BCW29LT1 BCW30 BCW30LT1 M74 marking MARKING M73
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon 3 COLLECTOR BCW29LT1 BCW30LT1 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –32 Vdc Collector–Base Voltage V CBO –32 Vdc Emitter–Base Voltage
|
Original
|
PDF
|
BCW29LT1
BCW30LT1
236AB)
BCW29LT1
BCW29
BCW30
BCW30LT1
M74 marking
MARKING M73
|
MPS3904
Abstract: 1N916 MMBTA20LT1 MPS390
Text: LESHAN RADIO COMPANY, LTD. General Purpose Amplifier NPN Silicon MMBTA20LT1 3 COLLECTOR 3 1 BASE 1 2 EMITTER 2 CASE 318–08, STYLE 6 SOT–23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Emitter–Base Voltage
|
Original
|
PDF
|
MMBTA20LT1
236AB)
MPS3904
1N916
MMBTA20LT1
MPS390
|
Untitled
Abstract: No abstract text available
Text: General Purpose Amplifier NPN Silicon MMBTA20LT1 3 COLLECTOR 3 1 BASE 1 2 EMITTER 2 CASE 318–08, STYLE 6 SOT–23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Emitter–Base Voltage V EBO 4.0 Vdc IC 100 mAdc
|
Original
|
PDF
|
MMBTA20LT1
236AB)
|
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon BCX70GLT1 BCX70JLT1 BCX70KLT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit Collector–Emitter Voltage V CEO 45 Vdc CASE 318–08, STYLE 6 Collector–Base Voltage
|
Original
|
PDF
|
BCX70GLT1
BCX70JLT1
BCX70KLT1
236AB)
|
diode MARKING M16
Abstract: 1N916 BCX70G BCX70GLT1 BCX70J BCX70JLT1 BCX70K BCX70KLT1 MPS3904
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon BCX70GLT1 BCX70JLT1 BCX70KLT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit Collector–Emitter Voltage V CEO 45 Vdc CASE 318–08, STYLE 6 Collector–Base Voltage
|
Original
|
PDF
|
BCX70GLT1
BCX70JLT1
BCX70KLT1
236AB)
diode MARKING M16
1N916
BCX70G
BCX70GLT1
BCX70J
BCX70JLT1
BCX70K
BCX70KLT1
MPS3904
|
Untitled
Abstract: No abstract text available
Text: General Purpose Transistors NPN Silicon BCW72LT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 45 Vdc Collector–Base Voltage V CBO 50 Vdc Emitter–Base Voltage V EBO 5.0 Vdc IC 100 mAdc 1 2 CASE 318–08, STYLE 6
|
Original
|
PDF
|
BCW72LT1
236AB)
|
Untitled
Abstract: No abstract text available
Text: General Purpose Transistors PNP Silicon BCW61BLT1 BCW61CLT1 BCW61DLT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO – 32 Vdc Collector–Base Voltage V CBO – 32 Vdc Emitter–Base Voltage
|
Original
|
PDF
|
BCW61BLT1
BCW61CLT1
BCW61DLT1
236AB)
MPS3905
|
1N916
Abstract: BCW60A BCW60ALT1 BCW60B BCW60BLT1 BCW60D BCW60DLT1 MPS3904
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon BCW60ALT1 BCW60BLT1 BCW60DLT1 3 COLLECTOR 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector–Emitter Voltage V CEO 32 Vdc Collector–Base Voltage V CBO 32 Vdc CASE 318–08, STYLE 6
|
Original
|
PDF
|
BCW60ALT1
BCW60BLT1
BCW60DLT1
236AB)
1N916
BCW60A
BCW60ALT1
BCW60B
BCW60BLT1
BCW60D
BCW60DLT1
MPS3904
|
KIA6451P
Abstract: KIA6419 rcd 160 5 120 ohm KIA6419P
Text: SEMICONDUCTOR KIA6419P/F TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT LOW POWER AUDIO AMPLIFIER W L G H D P d T 5 1 4 FEATURES Wide Operating Supply Voltage Range 2-16 volts -Allows Q DIM MILLIMETERS _ 0.2 A 9.6 + _ 0.2 B 6.45 + _ 0.1 D 1.52 + _ 0.1 d
|
Original
|
PDF
|
KIA6419P/F
KIA6419P/F
KIA6149
FIGURE26-SPLIT
KIA6419
KIA6451P
KIA6419
rcd 160 5 120 ohm
KIA6419P
|
SOT-23 MARKING M101
Abstract: MPS3905 BCW61 BCW61B BCW61BLT1 BCW61C BCW61CLT1 BCW61D BCW61DLT1 SOT M10
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon BCW61BLT1 BCW61CLT1 BCW61DLT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO – 32 Vdc Collector–Base Voltage V CBO – 32
|
Original
|
PDF
|
BCW61BLT1
BCW61CLT1
BCW61DLT1
236AB)
MPS3905
SOT-23 MARKING M101
BCW61
BCW61B
BCW61BLT1
BCW61C
BCW61CLT1
BCW61D
BCW61DLT1
SOT M10
|
mdp1403
Abstract: 330 ohm resistor pack MDP1801 MDP1405 MDP1603 MDP18 MDP1401 MDP1601 MDP1605 MDP18-01
Text: MODELS MDP14, MDP16, MDP18 Thick Film Resistor Networks Dual-ln-Line, Molded 01, 03, 05 Schematics FEATURES • .160“ [4.06] maximum seated height •Reduces total assembly costs • Rugged, molded case construction ■Compatible with automatic inserting equipment
|
OCR Scan
|
PDF
|
MDP14,
MDP16,
MDP18
100PPM/
MDPXX-01
Pull-up/Pull70
MDP14-03-101G
MDP14-05-221/271G
14-pin
mdp1403
330 ohm resistor pack
MDP1801
MDP1405
MDP1603
MDP18
MDP1401
MDP1601
MDP1605
MDP18-01
|
ATIC 91
Abstract: ATIC 62 MDP1405
Text: MODELS MDP14 and MDP16 Thick Film Resistor Networks Dual-In-Line, Molded DIP 01, 03, 05 Schematics FEATURES .160" [4.06mm] maximum seated height Reduces total assembly costs Rugged, molded case construction Compatible with automatic inserting equipment Highly stable thick film
|
OCR Scan
|
PDF
|
MDP14
MDP16
100PPM/
MDPXX-01
P14-05-221/271G
ATIC 91
ATIC 62
MDP1405
|
2N6258
Abstract: 2N5133 2N4901 2N5055 2N5129 2N5143 2N5872 2N6030 2N6132 2N6278
Text: _ 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82D 0 0 0 4 6 D ~J - o ÔE DEI 0250354 □0D0G4b 4T SILICON ADVANCED SEMICONDUCTOR .T R A N S I S T O R S POLARITY PNP PNP PNP' PNP PNP PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN
|
OCR Scan
|
PDF
|
2N4900
2N4901
2N4902
2N4903
2N4904
2N4905
2N4906
2N4907
2N4908
2N4909
2N6258
2N5133
2N5055
2N5129
2N5143
2N5872
2N6030
2N6132
2N6278
|