power Junction FET advantages and disadvantages
Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor
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ED-19,
5966-3084E
power Junction FET advantages and disadvantages
5257 transistor
thermal conductivity ceramic FET
2T transistor surface mount
microwave fet
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GaAs FET operating junction temperature
Abstract: 5257 transistor chip die hp transistor HP transistor cross reference mtt2
Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. I. Thermal Resistance Thermal Resistance . 1 A. Definition .
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ED-19,
5966-3084E
GaAs FET operating junction temperature
5257 transistor
chip die hp transistor
HP transistor cross reference
mtt2
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pj 4d smd diode
Abstract: No abstract text available
Text: MCP3901 and PIC18F65J90 Energy Meter Reference Design User’s Guide 2012 Microchip Technology Inc. DS51968A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.
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MCP3901
PIC18F65J90
DS51968A
DS51968A-page
pj 4d smd diode
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zener SMD MARK A9
Abstract: No abstract text available
Text: MCP6L2 and PIC18F66J93 Energy Meter Reference Design 2012-2013 Microchip Technology Inc. DS52088B Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.
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PIC18F66J93
DS52088B
DS52088B-page
zener SMD MARK A9
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1 R 10E 3C, diode
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Octal buffer/tine driver with 5-volt tolerant inputs/outputs 3-State _ vr9d1 » FEATURES DESCRIPTION • 5-Volt tolerant inputs/outputs, for interfacing with 5-volt logic. The 74LVC241A is a high-performance, low-power, low-voltage,
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74LVC241A
74LVC241A
SV00618
1 R 10E 3C, diode
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t994i
Abstract: No abstract text available
Text: Philips Semiconductors Product specification 7a a r t 994i Octal buffer with 30£2 series termination resistors 3-State FEATURES DESCRIPTION • Octal bus interface The 74ABT2241 high-performance BICMOS device combines low static and dynamic power dissipation with high speed and high
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12mA/-32mA
500mA
74ABT2241
74ABT
500ns
SA00012
t994i
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1 R 10E 3C, diode
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK14SM-9 HIGH-SPEED SWITCHING USE FK14SM-9 OUTLINE DRAWING Dim ensions in mm 4.5 15 • V dss . 450V • rDS ON (MAX) . 0 .6 5 Q
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FK14SM-9
150ns
1 R 10E 3C, diode
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Untitled
Abstract: No abstract text available
Text: NATIONAL SEMICOND -CLOGIO 1QE D | bSQllHH ODbTbMa Q | CO <0 O J £ |N a t io n a l Æ !â S e m i c o n d u c t o r 54F/74F968 1 Mbit Dynamic RAM Controller General Description Features The ’F968 is a high performance memory controller, replac ing many SSI and MSI devices by grouping several unique
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54F/74F968
10-bit
10bit
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1 R 10E 3C, diode
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Octal buffer/line driver with 5-volt tolerant inputs/outputs 3-State 74LVC244A 74LVCH244A FEATURES DESCRIPTION • 5-volt tolerant inputs/outputs, for interfacing with 5-volt logic The 74LVC244A/74LVCH244A is a high-performance, low-power,
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74LVC244A
74LVCH244A
74LVCH244A
74LVC244A/74LVCH244A
1 R 10E 3C, diode
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INMOS G171 G176
Abstract: ims g171 p712c G-176 G176 G176P-50 G176P-40 G176J-40 G171 RS170
Text: IN M O S ID E CORP J D 4ß02bäa DOOBGET T '^ c P - 3 3 □ | -¿ 7 ^ 31 IMS G176 High performance C M O S colour look-up table m m o Designed to be compatible with IBM P S /21, VGA graphics systems s PCLK- Po —P7 Timing generator Pixel latch & mask - VDD
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PS/21,
RS170
65MHz.
950mW
G176P-40
G176P-50
G176P-65
G176J-40
G176J-50
G176J-65
INMOS G171 G176
ims g171
p712c
G-176
G176
G171
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inmos t212 transputer
Abstract: inmos transputer reference manual series T212 data IMST212 INMOS 0D0341C Inmos T212
Text: INHOS CORP GOUriOS • 10E D I Chapter 5 4fl05baa 0DD3M0fl fl | j 'T - ¥ 1 - / 7 - S ’ / IMS T212 engineering data 165 INMOS CORP 7- W -/?.&/ IDE D § 4ö0Sböfl 0DD340C1 0 | 166 1 _ Introduction R e s e tA n a ly s e E r r o i"
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4fl05bflÃ
IMST212
460Sfe
Link123Special
MemAO-15
MemDO-15
CORP211
inmos t212 transputer
inmos transputer reference manual
series T212 data
INMOS
0D0341C
Inmos T212
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PM50RHA120
Abstract: Sinusoida PWM Mitsubishi Electric IGBT MODULES diode sy 710 120C 251C E80276 inverter vfc 550 inverter vfc 1200
Text: MITSUBISHI INTELLIGENT POWER MODULES PM50RHA120 FLAT-BASE TYPE INSULATED PACKAGE PM 50RHA120 • 3 0 5OA, 1200V Current-sense IGBT type inverter • M onolithic gate drive & protection logic • Detection, protection & statusincication circuits fo r over-current, short-circuit,
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PM50RHA120
E80276
E80271
INA120
PM50RHA120
Sinusoida PWM
Mitsubishi Electric IGBT MODULES
diode sy 710
120C
251C
E80276
inverter vfc 550
inverter vfc 1200
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1 R 10E 3C, diode
Abstract: No abstract text available
Text: Philips Sem icon d u ctors Prelim inary specification 16-bit transceiver with direction pins; inverting; with 3012 series termination resistors; 3-State FEATURES 74LVC162640A 74LVCH162640A PIN CONFIGURATION 5 volt tolerant inputs/outputs for interfacing with 5V logic
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16-bit
74LVCH16640A
74LVC162640A
74LVCH162640A
74LVC
62640A
1 R 10E 3C, diode
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Untitled
Abstract: No abstract text available
Text: P hilips S em iconductors P ro du ct specification 16-bit buffer/line driver; 3-State 74LVCH16241 FEATURES PIN CONFIGURATION • Wide supply voltage range of 1.2V to 3.6V • Complies with JEDEC standard no. 8-1A • CMOS low power consumption • MULTIBYTE flow-through standard pin-out architecture
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16-bit
74LVCH16241
74LVCH16241
swoco47
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification 16-bit bus transceiver with direction pin 3-State FEATURES 74ALVC16245/ 74ALVCH16245 PIN CONFIGURATION • W ide supply voltage range of 1 2V to 3.6V • C om plies w ith JE D E C standard no. 8-1A 48 ] 1ÖE 1D IR rT
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16-bit
74ALVC16245/
74ALVCH16245
SV00906
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Q0142
Abstract: Philips diode 33J NOBA
Text: Philips Semiconductors Preliminary specification 16-bit transceiver with dual enable 3-State 74ALVCH16623 FEATURES DESCRIPTION • Complies with JEDEC standard no. 8-1A The 74ALVCH16623 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS
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16-bit
74ALVCH16623
74ALVCH16623
Q0142
Philips diode 33J
NOBA
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IMST800
Abstract: IMS T800 T800 transputer inmos transputer inmos T414 T800 IMS T414 inmos transputer reference manual Transputer T414 T800 equivalent
Text: INMOS CORP IDE D | MfiOBbaa QDQ32fia 5 I DffimoS Chapter 3 T - 4 1 - 1 7 -5 7 • IMS T800 engineering data 45 iNnos T - * ¿ 4 - /? - & corp / ioE d | M a o 2 t,aa □ o o 3 5 a ci m | 46 1 Introduction vcc GND C a p P lu s C a p M in u s R eset A n a ly s e
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02baa
-Link123Special
EventAc70
000000001A
IMST800
IMS T800
T800 transputer
inmos transputer
inmos T414
T800
IMS T414
inmos transputer reference manual
Transputer T414
T800 equivalent
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Untitled
Abstract: No abstract text available
Text: LT1Q24 Dual, Matched Picoampere, Microvolt Input Low Noise Op Amp KfVTURCS D C SC R IPTIO fl • Guaranteed Offset Voltage 5QpV Max. ■ Guaranteed Bias Current 25°C 120pAMax. ~55°Cto125°C 700pA Max. 1.5^V/°CMax. ■ Guaranteed Drift ■ LowNoise,0.1Hzto10Hz
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LT1024
120pAMax.
Cto125
700pA
1Hzto10Hz
112dB
lcu-10tctt£
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Untitled
Abstract: No abstract text available
Text: V23818-K305-V10 Small Form Factor Multimode 850 nm 1.3 Gigabit Ethernet 2x5 Transceiver w ith VF-45 Volition Connector Prelim inary D im ension s in (m m ) inches dEr-; dEr-; he:-; 0O.3&.O14 i8 ) | a | B(M)|C I ->.0 0 .3 ^ .0 1 4 (8 ) |0 0.10/.004(M)
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V23818-K305-V10
VF-45
D-13623,
de/Semiconductor/products/37/376
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3101-B
Abstract: h3101 Harris HFA3101 5 GHz Gilbert cell array csf 78-12
Text: CSF! H A R R I S W HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array November 1996 Features • Description High Gain Bandwidth Product fT .10GHz • High Power Gain Bandwidth P ro d u c t. 5GHz •
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HFA3101
HFA3101
10GHz)
10GHz
1320nm
3101-B
h3101
Harris HFA3101 5 GHz Gilbert cell array
csf 78-12
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inmos T414
Abstract: IMS T414 Transputer T414 IMST414 T414 inmos transputer reference manual transputer 7FFFFF84 22FC
Text: INMOS CORP 10E D | 4aG2b0fl 00G33S0 3 1 Ö nm oS C h a p te r 4 T - ^ ? -/7 -5 7 9 IMS T414 engineering data 107 Powered by ICminer.com Electronic-Library Service CopyRight 2003 IN M O S CORP "T-Vf-/7 * £ 7 40 02 1, 68 0 0 0 3 3 5 1 I I s I
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PDF
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T-47-/7-5
00D33S1
Link123Special
inmos T414
IMS T414
Transputer T414
IMST414
T414
inmos transputer reference manual
transputer
7FFFFF84
22FC
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P873-G35-552
Abstract: p1760-04 P873-13
Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel oped a variety of opto-electronic semiconductor de vices. These competitively priced high quality products are designed to meet the requirements of general and
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S-114
DK-2000
JAN/87
P873-G35-552
p1760-04
P873-13
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signetics 10116
Abstract: NE5212 Signetics ne5212 NE5212N signetics ne5230 SE5212N wifi 5 watt amplifier circuit LT 4320
Text: NE/SA/SE5212 Signetics Transimpedance Amplifier 140MHz Product Specification Linear Products DESCRIPTION FEATURES The NE/SA/SE5212 is a 14ki2 transim pedance, wideband, low noise differen tial output amplifier, particularly suitable for signal recovery in fiber optic receiv
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NE/SA/SE5212
140MHz)
NE/SA/SE5212
14ki2
140MHz
NE5212
NE5230
signetics 10116
NE5212 Signetics
NE5212N
signetics ne5230
SE5212N
wifi 5 watt amplifier circuit
LT 4320
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3dd 209
Abstract: adb 748 ADB 728 30f 124 F-91018 lm 6561 EB-63 motorola
Text: MCM6560 MCM6561 MCM6562 § > MOTOROLA MOS 8192-BIT BINARY ADDRESSABLE READ ONLY MEMORIES (N -C H A N N E L , LO W T H R E S H O L D 8K BINARY ADDRESSABLE READ ONLY MEMORIES T h e M C M 6 5 6 0 is a mask o ro g ra m m a b le 8 1 9 2 -b it s ta tic Read O n ly M e m o ry fa b ric a te d w ith N -C hannel m e ta l gate te c h n o lo g y . A
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MCM6560
MCM6561
MCM6562
8192-BIT
3dd 209
adb 748
ADB 728
30f 124
F-91018
lm 6561
EB-63 motorola
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