Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1 AMP FET SWITCH Search Results

    1 AMP FET SWITCH Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation

    1 AMP FET SWITCH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G3VM-61GR1

    Abstract: g3vm61gr1
    Text: MOS FET Relays G3VM-61GR1 New MOS FET Relays with 1 Amp Switching Designed for Switching Minute and Analog Signals, SOP Package • Upgraded G3VM-S1 Series. • Continuous load current of 1 A. • Dielectric strength of 1,500 Vrms between I/O. • RoHS compliant


    Original     		PDF G3VM-61GR1 G3VM-61GR1 X302-E-1 g3vm61gr1

    Untitled

    Abstract: No abstract text available
    Text: MOS FET Relays G3VM-61GR1 New MOS FET Relays with 1 Amp Switching Designed for Switching Minute and Analog Signals, SOP Package • Upgraded G3VM-S1 Series. • Continuous load current of 1 A. • Dielectric strength of 1,500 Vrms between I/O. • RoHS compliant


    Original     		PDF G3VM-61GR1 G3VM-61GR1 X302-E-1

    Untitled

    Abstract: No abstract text available
    Text: MOS FET Relays G3VM-61GR1 New MOS FET Relays with 1 Amp Switching Designed for Switching Minute and Analog Signals, SOP Package • Upgraded G3VM-S1 Series. • Continuous load current of 1 A. • Dielectric strength of 1,500 Vrms between I/O. • RoHS compliant


    Original     		PDF G3VM-61GR1 G3VM-61GR1 K178-E-01

    G3VM-61GR1

    Abstract: No abstract text available
    Text: MOS FET Relays G3VM-61GR1 New MOS FET Relays with 1 Amp Switching Designed for Switching Minute and Analog Signals, SOP Package • Upgraded G3VM-S1 Series. • Continuous load current of 1 A. • Dielectric strength of 1,500 Vrms between I/O. • RoHS compliant


    Original     		PDF G3VM-61GR1 G3VM-61GR1 X302-E-1

    DS21912

    Abstract: MCP1601 MCP1612 MCP1630 charger buck MHz "network interface cards" MCP7384
    Text: MCP1612 1 Amp, 1.4 MHz Synchronous Buck Regulator Product Summary: The MCP1612 is a fully integrated, current-mode controlled, synchronous buck regulator containing both the power FET and the synchronous switch. Utilizing an external resistor divider allows the output voltage of this


    Original     		PDF MCP1612 MCP1612 DS21924A DS21912 MCP1601 MCP1630 charger buck MHz "network interface cards" MCP7384

    Untitled

    Abstract: No abstract text available
    Text: HTMOSTM High Temperature Products Advanced Information HTANFET HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil, Gas and Geothermal Well • Output Current up to 1 Amp Continuous • Aerospace and Avionics


    Original     		PDF

    et 1102

    Abstract: downhole
    Text: HTMOSTM High Temperature Products Advanced Information HTNFET HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil, Gas and Geothermal Well • Output Current up to 1 Amp Continuous • Aerospace and Avionics


    Original     		PDF

    downhole

    Abstract: HTNFET
    Text: HTMOSTM High Temperature Products Advanced Information HIGH TEMPERATURE N-CHANNEL POWER FET HTNFET FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil, Gas and Geothermal Well • Output Current up to 1 Amp Continuous • Aerospace and Avionics


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: HTMOSTM High Temperature Products Advanced Information HTNFET HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil, Gas and Geothermal Well • Output Current up to 1 Amp Continuous • Aerospace and Avionics


    Original     		PDF

    KSK30OBU

    Abstract: No abstract text available
    Text: KSK30 KSK30 Low Noise PRE-AMP. Use • High Input Impedance: IGSS=1nA MAX • Low Noise: NF=0.5dB (TYP) • High Voltage: VGDS= -50V TO-92 1 1. Source 2. Gate 3. Drain Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSK30 KSK30OBU

    Untitled

    Abstract: No abstract text available
    Text: KSK117 KSK117 Low Requency Low Noise AMP • HighYFS: 15mS TYP • High Input Impedance: IGSS= -1nA • Low Noise, NF =1dB (TYP) TO-92 1 1. Drain 2. Gate 3. Source Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSK117

    KSK30

    Abstract: NF05
    Text: KSK30 KSK30 Low Noise PRE-AMP. Use • High Input Impedance: IGSS=1nA MAX • Low Noise: NF=0.5dB (TYP) • High Voltage: VGDS= -50V TO-92 1 1. Source 2. Gate 3. Drain Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSK30 KSK30 NF05

    KSK117

    Abstract: No abstract text available
    Text: KSK117 KSK117 Low Requency Low Noise AMP • HighYFS: 15mS TYP • High Input Impedance: IGSS= -1nA • Low Noise, NF =1dB (TYP) TO-92 1 1. Drain 2. Gate 3. Source Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSK117 KSK117

    KSK30

    Abstract: No abstract text available
    Text: KSK30 KSK30 Low Noise PRE-AMP. Use • High Input Impedance: IGSS=1nA MAX • Low Noise: NF=0.5dB (TYP) • High Voltage: VGDS= -50V TO-92 1 1. Source 2. Gate 3. Drain Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KSK30 KSK30

    Untitled

    Abstract: No abstract text available
    Text: HA21001MS VHF/UHF Tuner Use GaAs IC Features • Covers VHF and UHF frequencies • Contains local OSC FETs, double balance mixer and IF amp dual gate FET • Low noise, low distortion • Surface mount package UHF RF input VHF RF input 2 1 18 AC GND2 AC GND1


    Original     		PDF HA21001MS

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Pow er Field E ffect ransistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount M M F T 1 N 1 0 E Motorola Preferred Device M EDIUM POW ER TM O S FET 1 AMP 100 VOLTS This advanced E-FET is a TMOS Medium Power MOSFET


    OCR Scan     		PDF OT-223 MMFT1N10E

    Untitled

    Abstract: No abstract text available
    Text: IVC102 B U R R -B R O W N I 1 PRECISION SWITCHED INTEGRATOR TRANSIMPEDANCE AMPLIFIER APPLICATIONS DESCRIPTION • PRECISION LOW CURRENT MEASUREMENT The IVC102 is a precision integrating amplifier with FET op amp, integrating capacitors, and low leakage FET switches. It integrates low-level input current for


    OCR Scan     		PDF IVC102 IVC102

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN 2 3 9 1 2SK771 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp Applications Applications . Variable resistors, analog switches, AF amp, constant-current circuit Features . Adoption of FBET process . Very small-sized package permitting sets to be made smaller and slimmer


    OCR Scan     		PDF 4237TA 2SK771

    2SK303

    Abstract: No abstract text available
    Text: Ordering num ber:E N 856F ^ ¡ f N0.856F £ * j|ïjjf / 2SK303 II 1 N-Channel Junction Silicon FET // Low-Frequency II General-Purpose Amp Applications Features • Ideal for potentiometers, analog switches, low frequency amplifiers, constant current supplies, and


    OCR Scan     		PDF EN856F 2SK303 2SK303

    K 3264 fet transistor

    Abstract: KA 3264 c 3262 K 3264 transistor V1KJ yc 428 transistor LF400
    Text: LH4105/LH4105C PRELIMINARY 5^1 National Semiconductor LH4105/LH4105C Precision Fast Settling High Current Operational Amplifier General Description Features The LH4105 is a fast settling high current Bi-Fet op amp designed for applications that require a fast settling time of


    OCR Scan     		PDF LH4105/LH4105C LH4105 tl/k/9159â TL/K/9159-8 TL/K/9159-9 Wr-10kà TL/K/9159-11 TL/K/9159-10 K 3264 fet transistor KA 3264 c 3262 K 3264 transistor V1KJ yc 428 transistor LF400

    Untitled

    Abstract: No abstract text available
    Text: Honeywell HTMOS High Temperature Products Advanced Information HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Tested -55 to +225°C • Down-Hole Oil Well • Output Current up to 1 Amp Continuous • Avionics • Input Voltage up to 90V


    OCR Scan     		PDF

    HTMOS

    Abstract: HTANFET 30Q10
    Text: Honeywell HTMOS High Temperature Products Advanced Information HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Tested -55 to +225°C • Down-Hole Oil Well • Output Current up to 1 Amp Continuous • Avionics • Input Voltage up to 90V


    OCR Scan     		PDF H551B72 HTMOS HTANFET 30Q10

    downhole

    Abstract: No abstract text available
    Text: Honeywell HTMOS High Temperature Products Advanced Information HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil Well • Output Current up to 1 Amp Continuous • Avionics • Input Voltage up to 90V


    OCR Scan     		PDF

    2SK1069

    Abstract: 2SK771
    Text: O rd e rin g n u m b e r:EN 2 7 4 9 2 S K 1 06 9 No.2749 i samo i N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp Applications Applications • Low-frequency general-purpose amplifiers • Ideal for use in variable resistors, analog switches, low-frequency amplifiers, and constant-current


    OCR Scan     		PDF 2SK1069-applied 2SK1069 2SK771