G3VM-61GR1
Abstract: g3vm61gr1
Text: MOS FET Relays G3VM-61GR1 New MOS FET Relays with 1 Amp Switching Designed for Switching Minute and Analog Signals, SOP Package • Upgraded G3VM-S1 Series. • Continuous load current of 1 A. • Dielectric strength of 1,500 Vrms between I/O. • RoHS compliant
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G3VM-61GR1
G3VM-61GR1
X302-E-1
g3vm61gr1
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Untitled
Abstract: No abstract text available
Text: MOS FET Relays G3VM-61GR1 New MOS FET Relays with 1 Amp Switching Designed for Switching Minute and Analog Signals, SOP Package • Upgraded G3VM-S1 Series. • Continuous load current of 1 A. • Dielectric strength of 1,500 Vrms between I/O. • RoHS compliant
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G3VM-61GR1
G3VM-61GR1
X302-E-1
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Untitled
Abstract: No abstract text available
Text: MOS FET Relays G3VM-61GR1 New MOS FET Relays with 1 Amp Switching Designed for Switching Minute and Analog Signals, SOP Package • Upgraded G3VM-S1 Series. • Continuous load current of 1 A. • Dielectric strength of 1,500 Vrms between I/O. • RoHS compliant
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G3VM-61GR1
G3VM-61GR1
K178-E-01
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G3VM-61GR1
Abstract: No abstract text available
Text: MOS FET Relays G3VM-61GR1 New MOS FET Relays with 1 Amp Switching Designed for Switching Minute and Analog Signals, SOP Package • Upgraded G3VM-S1 Series. • Continuous load current of 1 A. • Dielectric strength of 1,500 Vrms between I/O. • RoHS compliant
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G3VM-61GR1
G3VM-61GR1
X302-E-1
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DS21912
Abstract: MCP1601 MCP1612 MCP1630 charger buck MHz "network interface cards" MCP7384
Text: MCP1612 1 Amp, 1.4 MHz Synchronous Buck Regulator Product Summary: The MCP1612 is a fully integrated, current-mode controlled, synchronous buck regulator containing both the power FET and the synchronous switch. Utilizing an external resistor divider allows the output voltage of this
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MCP1612
MCP1612
DS21924A
DS21912
MCP1601
MCP1630
charger buck MHz
"network interface cards"
MCP7384
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Untitled
Abstract: No abstract text available
Text: HTMOSTM High Temperature Products Advanced Information HTANFET HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil, Gas and Geothermal Well • Output Current up to 1 Amp Continuous • Aerospace and Avionics
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et 1102
Abstract: downhole
Text: HTMOSTM High Temperature Products Advanced Information HTNFET HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil, Gas and Geothermal Well • Output Current up to 1 Amp Continuous • Aerospace and Avionics
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downhole
Abstract: HTNFET
Text: HTMOSTM High Temperature Products Advanced Information HIGH TEMPERATURE N-CHANNEL POWER FET HTNFET FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil, Gas and Geothermal Well • Output Current up to 1 Amp Continuous • Aerospace and Avionics
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Untitled
Abstract: No abstract text available
Text: HTMOSTM High Temperature Products Advanced Information HTNFET HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil, Gas and Geothermal Well • Output Current up to 1 Amp Continuous • Aerospace and Avionics
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KSK30OBU
Abstract: No abstract text available
Text: KSK30 KSK30 Low Noise PRE-AMP. Use • High Input Impedance: IGSS=1nA MAX • Low Noise: NF=0.5dB (TYP) • High Voltage: VGDS= -50V TO-92 1 1. Source 2. Gate 3. Drain Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSK30
KSK30OBU
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Untitled
Abstract: No abstract text available
Text: KSK117 KSK117 Low Requency Low Noise AMP • HighYFS: 15mS TYP • High Input Impedance: IGSS= -1nA • Low Noise, NF =1dB (TYP) TO-92 1 1. Drain 2. Gate 3. Source Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSK117
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KSK30
Abstract: NF05
Text: KSK30 KSK30 Low Noise PRE-AMP. Use • High Input Impedance: IGSS=1nA MAX • Low Noise: NF=0.5dB (TYP) • High Voltage: VGDS= -50V TO-92 1 1. Source 2. Gate 3. Drain Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSK30
KSK30
NF05
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KSK117
Abstract: No abstract text available
Text: KSK117 KSK117 Low Requency Low Noise AMP • HighYFS: 15mS TYP • High Input Impedance: IGSS= -1nA • Low Noise, NF =1dB (TYP) TO-92 1 1. Drain 2. Gate 3. Source Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSK117
KSK117
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KSK30
Abstract: No abstract text available
Text: KSK30 KSK30 Low Noise PRE-AMP. Use • High Input Impedance: IGSS=1nA MAX • Low Noise: NF=0.5dB (TYP) • High Voltage: VGDS= -50V TO-92 1 1. Source 2. Gate 3. Drain Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSK30
KSK30
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Untitled
Abstract: No abstract text available
Text: HA21001MS VHF/UHF Tuner Use GaAs IC Features • Covers VHF and UHF frequencies • Contains local OSC FETs, double balance mixer and IF amp dual gate FET • Low noise, low distortion • Surface mount package UHF RF input VHF RF input 2 1 18 AC GND2 AC GND1
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HA21001MS
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Pow er Field E ffect ransistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount M M F T 1 N 1 0 E Motorola Preferred Device M EDIUM POW ER TM O S FET 1 AMP 100 VOLTS This advanced E-FET is a TMOS Medium Power MOSFET
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OT-223
MMFT1N10E
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Untitled
Abstract: No abstract text available
Text: IVC102 B U R R -B R O W N I 1 PRECISION SWITCHED INTEGRATOR TRANSIMPEDANCE AMPLIFIER APPLICATIONS DESCRIPTION • PRECISION LOW CURRENT MEASUREMENT The IVC102 is a precision integrating amplifier with FET op amp, integrating capacitors, and low leakage FET switches. It integrates low-level input current for
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IVC102
IVC102
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN 2 3 9 1 2SK771 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp Applications Applications . Variable resistors, analog switches, AF amp, constant-current circuit Features . Adoption of FBET process . Very small-sized package permitting sets to be made smaller and slimmer
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4237TA
2SK771
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2SK303
Abstract: No abstract text available
Text: Ordering num ber:E N 856F ^ ¡ f N0.856F £ * j|ïjjf / 2SK303 II 1 N-Channel Junction Silicon FET // Low-Frequency II General-Purpose Amp Applications Features • Ideal for potentiometers, analog switches, low frequency amplifiers, constant current supplies, and
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EN856F
2SK303
2SK303
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K 3264 fet transistor
Abstract: KA 3264 c 3262 K 3264 transistor V1KJ yc 428 transistor LF400
Text: LH4105/LH4105C PRELIMINARY 5^1 National Semiconductor LH4105/LH4105C Precision Fast Settling High Current Operational Amplifier General Description Features The LH4105 is a fast settling high current Bi-Fet op amp designed for applications that require a fast settling time of
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LH4105/LH4105C
LH4105
tl/k/9159â
TL/K/9159-8
TL/K/9159-9
Wr-10kÃ
TL/K/9159-11
TL/K/9159-10
K 3264 fet transistor
KA 3264
c 3262
K 3264 transistor
V1KJ
yc 428 transistor
LF400
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Untitled
Abstract: No abstract text available
Text: Honeywell HTMOS High Temperature Products Advanced Information HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Tested -55 to +225°C • Down-Hole Oil Well • Output Current up to 1 Amp Continuous • Avionics • Input Voltage up to 90V
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HTMOS
Abstract: HTANFET 30Q10
Text: Honeywell HTMOS High Temperature Products Advanced Information HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Tested -55 to +225°C • Down-Hole Oil Well • Output Current up to 1 Amp Continuous • Avionics • Input Voltage up to 90V
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H551B72
HTMOS
HTANFET
30Q10
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downhole
Abstract: No abstract text available
Text: Honeywell HTMOS High Temperature Products Advanced Information HIGH TEMPERATURE N-CHANNEL POWER FET FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil Well • Output Current up to 1 Amp Continuous • Avionics • Input Voltage up to 90V
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2SK1069
Abstract: 2SK771
Text: O rd e rin g n u m b e r:EN 2 7 4 9 2 S K 1 06 9 No.2749 i samo i N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp Applications Applications • Low-frequency general-purpose amplifiers • Ideal for use in variable resistors, analog switches, low-frequency amplifiers, and constant-current
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2SK1069-applied
2SK1069
2SK771
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