tic 2250
Abstract: No abstract text available
Text: E 32/16/9 EF 32 Core B66229 • In accordance with IEC 1246 • E cores are supplied as pieces M a g n e tic c h a ra c te ris tic s (per bet) "Ll/A = 0,89 m m -1 /„ = 74 mm Ae = 83 m m 2 4 = 8 1 ,4 m m 2 l/B = 6 140 m m 3 Approx. w eight 30 g/set
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B66229
B66229-G
-X130
-X127
B66229-G-X1
B66229-G500-X1
1000-X1*
tic 2250
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da152
Abstract: 74as895 1/tic 2250
Text: SN54AS895, SN74AS895 8 BIT M EM O R Y AD D R ESS G ENERATORS NOVEMBER 1 9 8 5 -R E V IS E D APRIL 1 9 8 6 • • ■ • I I • • • S ig n, C arry O u t, O v e rflo w , and Z e ro -D e te c t and O u tp u ts • E x c es s -3 BCD A rith m e tic 1 3 A rith m e tic and Logic Functions
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SN54AS895,
SN74AS895
da152
74as895
1/tic 2250
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P10RX
Abstract: 1W LED 003 208H 3Z30
Text: S c h e m a tic : RJ45 /7 7 E lectrical Specifications: @25°C Single Color LED: 1102— Isolation Voltage: 2250 Vdc Input to Output LEFT LED(x) Isolation Voltage: 500 Vrm s ( P 1 + 2 + 4 to P 3 + 6 + 7 ) Isolation Voltage: 500 Vrm s (P 9 + 1 0 to J 1 + 3 «Se P8)
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80MHz
100KHz
1-30MHz
40MHz
50MHz
30MHz
60MHz
100MHz
-35dB
P10RX
1W LED 003
208H
3Z30
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Opto-isolator
Abstract: No abstract text available
Text: Optoisolator Specifications H74A1 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor TTL Interface T h e H 74A 1 p ro v id e s log ic-to -lo g ic o p tic a l in te rf a c in g o f T T L ga te s w ith g uaranteed lev el c o m p a tib ility in p ra c tic al specified circuits. T h e
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H74A1
74S00
Opto-isolator
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TIC126
Abstract: TIC116 thyristor tic126 thyristor tic116 circuit tic126 a1283 TIC116 texas instruments rgk 20/2 KS 300 A TRIODE thyristors
Text: TEXAS INSTR -COPTO} bS d ËT | Ö TblTEt. 3 ^ 5 I 1 S961726 TEXA S IN S T R COPTO ¿¿C * 36698 D SERIES TIC 116, TIC126 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS T~ i S '- '* APRIL 1 9 7 1 - REVISED OCTOBER 1 9 8 4
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96t726
TIC116,
TIC126
T0-220AB
TIC116
TIC126
20fIS
thyristor tic126
thyristor tic116
circuit tic126
a1283
TIC116 texas instruments
rgk 20/2
KS 300 A TRIODE thyristors
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SN74LSOO
Abstract: SN5400 SN74SOO SN74H00 SN54L00 schematic diagram NAND gates SN54H00 SN54LS00 SN54S00 SN7400
Text: TYPES SN5400, SN54H00, SN54L00, SN54LS00, SN54S00, SN7400, SN74H00, SN74LS00, SN74S00 QUADRUPLE 2-IN PUT POSITIVE-NAND GATES R E V IS E D D E C E M B E R 1 9 8 3 • P a c k a g e O p tio n s In c lu d e B o th P la s tic a n d C e r a m ic C h ip C a rrie rs in A d d itio n to P la s tic
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SN5400,
SN54H00,
SN54L00,
SN54LS00,
SN54S00,
SN7400,
SN74H00,
SN74LS00,
SN74S00
sn5400.
SN74LSOO
SN5400
SN74SOO
SN74H00
SN54L00
schematic diagram NAND gates
SN54H00
SN54LS00
SN54S00
SN7400
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01-50MHz
Abstract: 4HSC
Text: S c h e m a tic : I 1 CT: 1 CT 5 RJ45 Q TX RX 1000pF 2KV - L - 2SC° 1 12 Q ^ R ig h t LED ¡ _ _ [ _ R1 ,R 2 ,R 3 ,R 4 : 7 5 E le c tr ic a l ±1% .J Ò OHMS / ~ 7~7 S p e c ific a tio n s: 25DC Isolation Voltage: 2250 Vdc Min
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350uH
100mV
1D00pF
300MHz
300MHZxul
Sep-06-06
01-50MHz
4HSC
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Untitled
Abstract: No abstract text available
Text: tfûPulse Electronics www.pulseelectronics.com NOTES: UNLESS OTHERWISE SPECIFIED 1. N O TIC E: R oH S -6 s / THIS IS A RoHS COMPLIANT COM PONENT/PRODUCT. ALL ENGINEERING CHANGES MUST HAVE PRIOR APPROVAL BY THE DESIGN CENTER. 2. PLASTIC HOUSING: THERMOPLASTIC MATERIAL WITH FLAMMABILITY
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5-2810N
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER SSL—LX5 0 9 3 UWC/E1 REV, A P 5 .9 0 W O ,2 3 2 ] 0 5 ,0 0 REV. E.C.N. A NUMBER AND REVISION COMMENTS DATE E.C.N, # 1 1 1 4 9 1 0 .Z 7 .0 6 [0 0 ,1 9 7 ] ELEC TRO -O P TIC AL CHARACTERISTICS Ta =25'C PARAM ETER SY M B O L
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LX5093UWC/E1
550nrn
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TIC116
Abstract: TIC126 circuit tic126 tic 126 SILICON CONTROLLED RECTIFIERS a1283 thyristor tic126 KS 300 A TRIODE thyristors rgk 20/2 thyristor tic116 TIC 2260
Text: TEXAS INSTR -COPTO} ^ 9 6 1 7 2 6 TEXAS INSTR <OPTO> 62C 36 69 8 D SERIES TIC 1 16, TIC126 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS T ~ I S '* 'S ' APRIL 1971 - REVISED OCTOBER 1984 Silicon Controlled Rectifiers 50 V to 600 V 8 A and 12 A D C 80 A and 100 A Surge Current
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96T726
TIC116,
TIC126
T0-220AB
TIC116
TIC126
100ft
20fIS
circuit tic126
tic 126 SILICON CONTROLLED RECTIFIERS
a1283
thyristor tic126
KS 300 A TRIODE thyristors
rgk 20/2
thyristor tic116
TIC 2260
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Diode BAY 19
Abstract: Diode BAY 21 Diode BAY 80 IR 10D DIODE Diode BAY 18 Diode BAY 45 Diode BAY 42 "BAY 21" BAY18 bay 17 diode
Text: Silicon Diodes Silicon Junction Diodes in DO-7 glass encapsulation fo r general a p p lica tio n s T yp e M a x im u m R a tin g s C h a ra c te ris tic s ia> @ @ @ T = 25 ° C amb = am° T 25 ° C Vp = U = 25 ° C @ 1 V VR = f = 10 V 0,5 M H z Q amb Vr V
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BAW21
Diode BAY 19
Diode BAY 21
Diode BAY 80
IR 10D DIODE
Diode BAY 18
Diode BAY 45
Diode BAY 42
"BAY 21"
BAY18
bay 17 diode
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MCM14552
Abstract: a2150
Text: g M O T O R O L A CMOS LSI 256-B IT STA TIC RANDOM ACCESS M EM O RY (L O W -P O W E R C O M P L E M E N T A R Y M O S I T h e M C M 1 45 52 is a static random access m em ory (R A M ) organ ized in a 6 4 x 4 b it pattern. T h e three chip enable inputs can be used
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256-BIT
MCM14552
2048-bit
MCM14552
D12D13D14D15
D9D10D11
a2150
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RCA 4x150a
Abstract: 4X150A rca tube 1635 RCA 3080 7034/4X150A 703H 500 watts audio amplifier diagram RECTIFIER GI RCA-7035
Text: T h is b u l l e t i n also a p p lie s t o RCA—7035/4-XI BOD wh ich is id e n tic a l w ith RCA-703M-/ M-X150A e x c e p t f o r i t s h e a t e r r a t i n g o f 2 6 . 5 ± 10% v o l t s , 0 . 5 8 ampere. 7 3 / 4 4 X 1 5 7035/4X150D A BEAM POWER TUBE RCA- 7034/ 4XI 5 0 A i s
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7034/4X150A
RCA-7035/tX150D
RCA-703
7035/4X150D
RCA-7034/4XI50A
21/3Z
92CS-9800RI
RCA 4x150a
4X150A
rca tube 1635
RCA 3080
7034/4X150A
703H
500 watts audio amplifier diagram
RECTIFIER GI
RCA-7035
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LA1810
Abstract: HW-62A5 LA1811 mitsumi tuner fm if 10.7Mhz LA181 MA-7014 YT-30103 JYHZ RUF resistor LA1186
Text: Ordering number-EN2250C LA1810 NO.2250C SAiYO AM/FM/MPX Tuner System for RadioCassette Recorders, Qtfttçic Centers i ,#|k. Package Dimen^ás F u n ctions •FM-IF : IF amp, quadrature detector, soft muting, tuning indicator. • M PX : PLL stereo decoder, stereo indicator,
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number-EN2250C
2250C
LA1810
3067-DIP24S
DJP24S
LA1810
HW-62A5
LA1811
mitsumi tuner fm if 10.7Mhz
LA181
MA-7014
YT-30103
JYHZ
RUF resistor
LA1186
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T1C106M
Abstract: TIC106D TIC106M TIC106B TIC106C TIC106A TIC106F TIC106D Thyristor KS 300 A TRIODE thyristors PNPN
Text: T E X A S IN STR -COPTO} tS 686-1726 TEXAS INSTR COPTO D E | fl^blVEfci □ □ 3 b b ‘iS 1 | ~ 62C 3 6 6 9 2 TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106F, TIC106M P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS APRIL 1 9 7 ) - REVISED OCTOBER 19S4
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TIC106A,
TIC106B,
TIC106C,
TIC106D,
TIC106E,
TIC106F,
TIC106M
T0-22QAB
TIC106F
TIC106A
T1C106M
TIC106D
TIC106B
TIC106C
TIC106D Thyristor
KS 300 A TRIODE thyristors
PNPN
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tic 2250
Abstract: No abstract text available
Text: AT65-0002 M/A-COM Preliminary Specifications Voltage Variable Attenuator 800 - 2250 MHz Features • • • • • • • A1ÂCG M M R F K M c io v /a v e H ro nu cls SOW-16 High Third Order Intercept Point Surface Mount Package 20 dB Dynamic Range 5% Operating Bandwidth
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AT65-0002
SOW-16
AT65-0002
tic 2250
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SN54ALS616
Abstract: ALS61 SN74ALS616
Text: SN54ALS616, SN54ALS617. SN74ALS616, SN74ALS617 16 BIT PARALLEL ERROR DETECTION AND CORRECTION CIRCUITS D 2 8 4 0 , APRIL 1 9 8 4 -R E V IS E D SEPTEMBER 19 8 5 • Detects and Corrects Single-Bit Errors • Detects and Flags Dual-Bit Errors • Built-In Diagnostic Capability
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SN54ALS616,
SN54ALS617,
SN74ALS616,
SN74ALS617
d2840,
1984-revised
SN54ALS616.
SNS4ALS617
SN54ALS616
ALS61
SN74ALS616
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DB24-DB31
Abstract: DB0-DB7-DB8-DB15 DB26 DB27 DB31
Text: HIG H S PEED C M O S LOGIC T Y P E S S N 5 4 H C 6 3 2, S N 74 H C 6 3 2 32 BIT P A R A L L E L ER R O R D E T E C T IO N A N D C O R R EC TIO N CIR CU ITS D 2804, M ARCH 1984 . . J D OR N PACKAGES High-Current 3-S tate Outputs Can Drive up to 15 LSTTL Loads
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SN54HC632,
SN74HC632
D2804.
HC632
32-bit
52-pin,
600-mil
DB24-DB31
DB0-DB7-DB8-DB15
DB26
DB27
DB31
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Untitled
Abstract: No abstract text available
Text: tfûPulse Electronics www.pulseelectronics.com NOTES: U N LESS OTHERWISE SPECIFIED NOTICE: THIS IS A RoHS COMPLIANT C O M PO N EN T/PR O D U C T. ALL ENGINEERING CHANGES MUST HAVE PRIOR APPRO VAL BY THE DESIGN CENTER. 1. R oH S -6 s/ 2. PLASTIC HOUSING: THERM OPLASTIC
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TIC106D
Abstract: T1C106M TIC106B TIC106A 0/T1C106M
Text: L2 TE X A S IN ST R - C OP TO 686-1726 TEXAS INSTR COPTO » Ë J aibl72fci 003Lbci2 1 | ~ 62C 3 6 6 9 2 TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106F, TIC106M P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS A PRIL 1 9 7 ) - R EV ISED O CTOBER 19S4
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aibl72fci
003Lbc
TIC106A,
TIC106B,
TIC106C,
TIC106D,
TIC106E,
TIC106F,
TIC106M
TIC106D
T1C106M
TIC106B
TIC106A
0/T1C106M
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50Hz sine wave generator
Abstract: TIC216D TIC216M sine wave 50Hz generator TIC216E 50hz sine generator TIC216A TIC216 TIC216C TIC216B
Text: TEXAS INSTR {OPTO} bË Ï>F| flìblTSb DD3t.7m 7 “Ô 9 6 1 7 2 6 TEXAS INSTR COPTO 62C 36714 TIC216A, TIC216B, TIC216C, TIC216D, TIC216E, TIC216M, TIC216S, TIC216N SILICON TRIACS REVISED OCTOBER 1984 • • • Sensitive-Gate Trfacs 100 Vto 800 V MAX Iq t °f 5 mA Quadrants 1-3)
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TIC216A,
TIC216B,
TIC216C,
TIC216D,
TIC216E,
TIC216M,
TIC216S,
TIC216N
T0-220AB
TIC216A
50Hz sine wave generator
TIC216D
TIC216M
sine wave 50Hz generator
TIC216E
50hz sine generator
TIC216
TIC216C
TIC216B
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GE AS634
Abstract: TIC 2260
Text: SN54AS632, SN54AS634 SN74AS632, SN74AS634 32 BIT PARALLEL ERROR DETECTION AND CORRECTION CIRCUITS PRODUCT PREVIEW D2661, JANUARY 1986 • Detects and Corrects Single-Bit Errors • Detects and Flags Dual-Bit Errors • Built-In Diagnostic Capability • Fast Write and Read Cycle Processing
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SN54AS632,
SN54AS634
SN74AS632,
SN74AS634
D2661,
AS632
SN74AS632
GE AS634
TIC 2260
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TIC263
Abstract: tic253 triacs 12V1 15-V T1C253 TIC263 Series
Text: TEXAS INSTR ÏÏ5 -COPTO} DE I f i T t l i 7 2t a 690*72^ TEXAS IRSTR COPTOT 0D3ti73ö 62C 36738 SERIES TIC253, TIC263 SILICON TRIACS REVISED OCTOBER 1984 High-Current Triacs 1 0 0 V to 8 0 0 V . 12 A and 16 A R M S 1 0 0 A and 12 5 A Peak Current M ax IGT of 5 0 mA Quadrants 1 -3
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aTkl72b
003b73Ã
T1C253,
TIC263
O-22QAB
TIC253
TIC263
TIC253,
triacs
12V1
15-V
T1C253
TIC263 Series
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TIC263
Abstract: TIC253 1106C 15-V C253 T1C253
Text: ÏÏ5 T E X A S IN ST R -COPTO} 0 9 6 *7 2 6 TEXAS ÏR B T R DE|aTt,172b 003b73ö Q | ~ <0PT05“ D T 62C 3 6 7 3 8 / r ' SERIES TIC253, TIC263 SILICON TRIACS REVISED OCTOBER 1984 High-Current Triacs 100 V to 800 V . 12 A and 16 A R M S 100 A and 125 A Peak Current
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003b73Ã
T1C253,
TIC263
O-22QAB
TIC253
TIC263
TIC253,
1106C
15-V
C253
T1C253
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