Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1/DIODE N53 Search Results

    1/DIODE N53 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    1/DIODE N53 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si Photo-diode Chip-TK N53PD 1. Scope •The specification applies to PIN silicon photo-diode chips. •Type : TK N53PD 2. Structure •PIN planar type. •Electrode topside cathode : Aluminum. •Electrode backside (anode) : Gold alloy. 3. Size •Chip size


    Original
    N53PD Tel886-3-5781616 Fax886-3-5780545 Tel886-37-582997 Fax886-37-582908 PDF

    siemens siferrit N27

    Abstract: Siferrit N67 UU CORE 100-turn u cores UI N27
    Text: U, UI and UR Cores General Information 1 Core shapes and materials U and I cores are made of SIFERRIT materials N27, N53, N62, N67 and now new, of N82. Owing to their high saturation flux density, high Curie temperature and low dissipation losses, they are suitable for power, pulse and high-voltage transformers in particular line deflection transformers and


    Original
    100-turn mT/100 Hz/100 siemens siferrit N27 Siferrit N67 UU CORE u cores UI N27 PDF

    DCM flyback transfer function vorperian

    Abstract: simulation flyback converter Self Oscillating Flyback Converters Christophe Basso flyback operate in both ccm and dcm DCM flyback transfer function 7 pin dil smps power control ic Motorola smps 33364D2 spice model 1n4148
    Text: AN1681/D How to Keep a FLYBACK Switch Mode Supply Stable with a Critical-Mode Controller http://onsemi.com Prepared by: Christophe BASSO, MOTOROLA SPS BP-1029, Le Mirail, 31023 Toulouse France email: R38010@email.sps.mot.com; Tel.: 33 5 61 19 90 12 APPLICATION NOTE


    Original
    AN1681/D BP-1029, R38010 r14525 DCM flyback transfer function vorperian simulation flyback converter Self Oscillating Flyback Converters Christophe Basso flyback operate in both ccm and dcm DCM flyback transfer function 7 pin dil smps power control ic Motorola smps 33364D2 spice model 1n4148 PDF

    Christophe Basso

    Abstract: DCM flyback transfer function vorperian DCM flyback transfer function flyback operate in both ccm and dcm rhpz ridley boost ridley xfmr spice flyback operate in both ccm dcm 140U
    Text: MOTOROLA Order this document by AN1681/D SEMICONDUCTOR APPLICATION NOTE AN1681 How to Keep a FLYBACK Switch Mode Supply Stable with a Critical-Mode Controller Christophe BASSO, MOTOROLA SPS BP–1029, Le Mirail, 31023 Toulouse France e–mail: R38010@email.sps.mot.com; Tel.: 33 5 61 19 90 12


    Original
    AN1681/D AN1681 R38010 Christophe Basso DCM flyback transfer function vorperian DCM flyback transfer function flyback operate in both ccm and dcm rhpz ridley boost ridley xfmr spice flyback operate in both ccm dcm 140U PDF

    1/diode n53

    Abstract: No abstract text available
    Text: CM1453-04CP Praetorian 4-Channel LCD Camera EMI Filter Array with ESD Protection Features • • • • • • • • channel of the CM1453-04CP is implemented as a 3 pole L-C filter where the component values are 9.5pF 20nH-9.5pF. The roll-off frequency at -6dB attenuation


    Original
    CM1453-04CP CM1453-04CP 20nH-9 380MHz 160Mbps -35dB 800MHz 178mm 1/diode n53 PDF

    Untitled

    Abstract: No abstract text available
    Text: Praetorian 4-Channel EMI Filter Array with ESD Protection CM1453-04CP Features Product Description • • • • • • The CM1453-04CP is a pi-style EMI filter array with ESD protection, which integrates filters C-L-C in CSP form factor with 0.40mm pitch. Each EMI filter


    Original
    CM1453-04CP CM1453-04CP 5pF-20nH-9 380MHz 160Mbps -35dB 800MHz PDF

    CM1453

    Abstract: CM1453-06CP AP-217 CSP 15-2
    Text: Praetorian 6-Channel EMI Filter Array with ESD Protection CM1453-06CP Features Product Description • • • • • • The CM1453-06CP is a pi-style EMI filter array with ESD protection, which integrates filters C-L-C in CSP form factor with 0.40mm pitch. Each EMI filter


    Original
    CM1453-06CP CM1453-06CP 5pF-20nH-9 380MHz 160Mbps -35dB 800MHz CM1453 AP-217 CSP 15-2 PDF

    CM1453

    Abstract: No abstract text available
    Text: Praetorian 4-Channel EMI Filter Array with ESD Protection CM1453-04CP Features Product Description • • • • • • The CM1453-04CP is a pi-style EMI filter array with ESD protection, which integrates filters C-L-C in CSP form factor with 0.40mm pitch. Each EMI filter


    Original
    CM1453-04CP CM1453-04CP 5pF-20nH-9 380MHz 160Mbps -35dB 800MHz CM1453 PDF

    LCD for mobile phone

    Abstract: No abstract text available
    Text: Praetorian 6-Channel EMI Filter Array with ESD Protection CM1453-06CP Features Product Description • • • • • • The CM1453-06CP is a pi-style EMI filter array with ESD protection, which integrates filters C-L-C in CSP form factor with 0.40mm pitch. Each EMI filter


    Original
    CM1453-06CP CM1453-06CP 5pF-20nH-9 380MHz 160Mbps -35dB 800MHz LCD for mobile phone PDF

    CM1453-06CP

    Abstract: No abstract text available
    Text: CM1453-06CP Praetorian 6-Channel LCD Camera EMI Filter Array with ESD Protection Features • • • • • • • • channel of the CM1453-06CP is implemented as a 3 pole L-C filter where the component values are 9.5pF 20nH-9.5pF. The roll-off frequency at -6dB attenuation


    Original
    CM1453-06CP CM1453-06CP 20nH-9 380MHz 160Mbps -35dB 800MHz 178mm PDF

    Untitled

    Abstract: No abstract text available
    Text: Praetorian 8-Channel EMI Filter Array with ESD Protection CM1453-08CP Features • • • • • • • • Eight channels of EMI filtering ±15kV ESD protection IEC 61000-4-2, contact discharge ±30kV ESD protection (HBM) Greater than -40dB of attenuation at 1GHz


    Original
    CM1453-08CP -40dB PDF

    N538

    Abstract: CM1453
    Text: Praetorian 8-Channel EMI Filter Array with ESD Protection CM1453-08CP Features • • • • • • • • Eight channels of EMI filtering ±15kV ESD protection IEC 61000-4-2, contact discharge ±30kV ESD protection (HBM) Greater than -40dB of attenuation at 1GHz


    Original
    CM1453-08CP -40dB N538 CM1453 PDF

    N538

    Abstract: No abstract text available
    Text: CM1453-08CP Praetorian 8-Channel LCD Camera EMI Filter Array with ESD Protection Features • • • • • • • • channel of the CM1453-08CP is implemented as a 3 pole L-C filter where the component values are 9.5pF 20nH-9.5pF. The roll-off frequency at -6dB attenuation


    Original
    CM1453-08CP CM1453-08CP 20nH-9 380MHz 160Mbps -35dB 800MHz 330mm N538 PDF

    MIPI csi-2 spec

    Abstract: MIPI EMI HDMI TO MIPI DSI htp 50 range MHz MIPI EMI4192 MIPI d-phy spec
    Text: EMI4192 Common Mode Filter with ESD Protection Functional Description The EMI4192 is an integrated common mode filter providing both ESD protection and EMI filtering for high speed digital serial interfaces such as HDMI or MIPI D−PHY. The EMI4192 provides protection for two differential data line pairs


    Original
    EMI4192 WDFN10 EMI4192/D MIPI csi-2 spec MIPI EMI HDMI TO MIPI DSI htp 50 range MHz MIPI MIPI d-phy spec PDF

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan
    1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor PDF

    N5363B

    Abstract: N5356 N5373B n5366 N5380 N5375B N5380B 1N53888 N5383 N534
    Text: 1N5344B - 1 N5388B VISHAY 5W ZENER DIODES /l i t e w i i I POWER SEMICONDUCTOR I Features Voltage Range 8.2V - 200V Glass Passivated Junction 5W Steady State High Surge Capability ±5% Voltage Tolerance on Nominal Vz is Standard 100% Tested Î c Mechanical Data


    OCR Scan
    1N5344B -1N5388B MIL-STD-202, 1N53fi5R. 1N5357B DS21407 N5344B-1 N5388B N5363B N5356 N5373B n5366 N5380 N5375B N5380B 1N53888 N5383 N534 PDF

    5344b

    Abstract: 5347b diode 5361B 5362B IN 5344B 5357B 5374B S200-2-00 5348B 5363B
    Text: 1N5344B - 1 N5388B VISHAY 5WZENER DIODES fL IT E K K r P O W E R S E M IC O N D U C T O R j Features Voltage Range 8.2V - 200V Glass Passivated Junction 5W Steady State High Surge Capability ±5% Voltage Tolerance on Nominal Vz is Standard 100% Tested A A


    OCR Scan
    1N5344B N5388B MIL-STD-202, DS21407 1N5344B-1N5388B 5344b 5347b diode 5361B 5362B IN 5344B 5357B 5374B S200-2-00 5348B 5363B PDF

    13403

    Abstract: No abstract text available
    Text: Single Phase Bridges Part Number N43140B1EB1 G50420B1EB1 G5320B1EB1 G50440B1EB1 G5340B1EB1 G50460B1EB1 G5360B1EB1 G50480B1EB1 G5380B1EB1 G504100B1EB1 G53100B1EB1 G504120B1EB1 G53120B1EB1 N50420B1EB1 N5320B1EB1 N50440B1EB1 N5340B1EB1 N50460B1EB1 N5360B1EB1


    OCR Scan
    1353120B1EB1 B1P-12 13403 PDF

    military part marking symbols jan

    Abstract: jan1n538 1n538 JAN1N540 1N538 JAN JAN-1N540M 1N538M in547 JAN-1N538 JAN-1N547M
    Text: MIL SPECS iclooooias 0002300 L> f MIL-S-19500/2021 AMOEDMOrr 2 14 December 1964 supebsedS g D C K »T 1 3 December 1963 MILITARY SPECIFICATl« SEMICONDUCTOR DEVICES, DIODES, SILICCB, POWER BECTLFTEBS, TYPES JAN-1 N538, JAN-1#540 AMD JAI-1*547 This amendment forms a part of Military Specification MIL-S-19500/2C2A,


    OCR Scan
    DDQQ125 MEL-S-19500/2D21 JAN-1N538, JAN-1N540 JA1-U547 MIL-S-19500/202A, MIL-S-19500 MEL-STD-750. MIL-S-19491 MIL-S-19500. military part marking symbols jan jan1n538 1n538 JAN1N540 1N538 JAN JAN-1N540M 1N538M in547 JAN-1N538 JAN-1N547M PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Current Regulator Diodes 1N5283 Field-effect current regulator diodes are circuit elements that provide a current essentially independent of voltage. These diodes are especially designed for maximum impedance over the operating range. These devices may be used in parallel to obtain


    OCR Scan
    1N5283 1N5314 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Current Regulator Diodes Field-effect current regulator diodes are circuit elements that provide a current essentially independent of voltage. These diodes are especially designed for maximum impedance over the operating range. These devices may be used in parallel to obtain


    OCR Scan
    1N5283 1N5314 PDF

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


    OCR Scan
    2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent PDF

    diode IN5399

    Abstract: IN5399 in5391 diode IN5391 N5399 diode IN5391 diode rectifier in5399 3 Ampere silicon Diode IN5397 20 ampere diode
    Text: DIODES LIMITED IN5391 TO IN5399 SERIES FAI RAC RES ESTATE. DEDW O RTH R OAD. W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 T ele x: 847255 SEMICONDUCTOR MANUFACTURERS 1.5 AMPERE SILICON RECTIFIERS With “ LOCKED-IN” Reliability FEATURES • Superior Rectification Efficiency


    OCR Scan
    IN5391 IN5399 1N5931 1N5392 1N5393 1N5395 1N5397 1N5398 1N5399 diode IN5399 in5391 diode N5399 diode IN5391 diode rectifier in5399 3 Ampere silicon Diode IN5397 20 ampere diode PDF

    IN5350B

    Abstract: 1N53588 IN5350 IN5388 IN5342B IN53888 1N53448 1N53358 IN5359b 1N53768
    Text: INTERNATIONAL SEMICOND M'îE D T0G037Ö 0000G3L. Ô41 • I S E M International Semiconductor, Inc . 5 WATT Z E N E R DIOD ES H I G H S UR G E C U R R E N T C A PA B I LI T Y 3 . 3 TO 2 0 0 VOLTS 1N5333B thru 1N5388B ELECTRICAL CHARACTERISTICS @25’C REGULATOR


    OCR Scan
    T0D037Ã 000003b 1NS3338 IN533dB 1N53358 1N533SB 1N5337B IN5350B 1N53588 IN5350 IN5388 IN5342B IN53888 1N53448 IN5359b 1N53768 PDF