74FCT541
Abstract: 4029 cmos 4N57 74fct540 4029 truth table
Text: INTEGRATED DEVICE 14E D B 4ñ&5771 0Q041ÔS 1 • PRELIMINARY IDT 54/74FCT540/A IDT 54/74FCT541/A FAST CMOS OCTAL BUFFER/ LINE DRIVER FEATURES: DESCRIPTION: • 1DT54/74FCT540/41 equivalent to FASTIMspeed; IDT54/74FCT540A/41A 30% faster than FAST 3 The IDT54/74FCT540/A and IDT54/74FCT541/A are octal
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0Q041
1DT54/74FCT540/41
IDT54/74FCT540A/41A
S10-124
00041AA
IDT54/74FCT540/A
IDT54/74FCT541/A
MIL-STD-883,
S10-125
74FCT541
4029 cmos
4N57
74fct540
4029 truth table
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Untitled
Abstract: No abstract text available
Text: F eatures □ Comprehensive M IL-STD-1553 dual redundant Bus Controller BC , Remote Terminal (RT), and Monitor Terminal (MT) with integrated Bus Transceivers, Memory, and Memory Management Unit (MMU) □ Compliant MIL-STD-1553B, Notice II RT - Internal command ¡¡legalization in the RT mode
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IL-STD-1553
MIL-STD-1553B,
16-bit
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Untitled
Abstract: No abstract text available
Text: Lattice T'Aie Lattice ispLSI and pLSI 2000 Family ï i I Corporation Features_ J Introduction to ispLSI and pLSI 2000 Family ispLSI and pLSI 2000 Family □ 154 M Hz System Perform ance □ 5.5 ns Pin-to-Pin Delay □ High Density 1,000-6,000 PLD Gates
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160-Pin
0212-80Bisp/2128
00413A
2128-100LM
2128-80LM
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Untitled
Abstract: No abstract text available
Text: L4M Device Level 4 Mapper TXC-03456 DATA SHEET Preliminary . = • Maps an asynchronous 139.264 Mbit/s tributary into an AU-4/VC-4 STS-3c/SPE. • Nibble or byte 139.264 Mbit/s line interface - G.751 receive and transmit performance
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TXC-03456
DM220
TXC-03456-MB
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Untitled
Abstract: No abstract text available
Text: bq4016/bq4016Y Il BENCHMARQ 1024Kx8 Nonvolatile SRAM Features General Description ► D ata retention in the absence of power The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The in tegral control circuitry and lithium
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bq4016/bq4016Y
1024Kx8
bq4016
608-bit
0Q0410S
36-Pin
bq4016
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r12n10
Abstract: EMP7032 max7000
Text: Includes MAX7000E M A Y IVI M A 7 0 0 0 / UUU Programmable Logic Device Family March 1995, ver. 3 Features. Data Sheet • ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance CMOS EEPROM devices based on secondgeneration Multiple Array MatriX MAX architecture
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MAX7000E
EPM7256E
192-Pin
208-Pin
r12n10
EMP7032
max7000
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Untitled
Abstract: No abstract text available
Text: IV n o m electronic June 1992 M 67204 Hl-REL DATA SHEET_ 4k x 9 CMOS PARALLEL FIFO FEATURES . EM PTY, FULL AND HALF FLAGS IN SING LE DEVICE MODE WIDE TEMPERATURE RANGE : - 55°C TO + 125°C . RETRANSMIT CAPABILITY . BI-DIRECTIONAL APPLICATIONS 67204 L LOW POWER
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5flb645b
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QML-38535
Abstract: LM6121 smd handbook
Text: REVISIONS DATE DESCRIPTION LTR APPROVED YR-MO-DA Chan ge s in a c c o r d a n c e wi th NOR 5 9 6 2 - R 2 3 3 - 9 2 . 92-08-18 M. A. Frye A d d ca se o u t l i n e P. C h a n g e to se ct io n 1.3. Tech ni ca l and e d it o r i a l chan ge s th ro ug ho ut . _
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5962-R233-92.
6726Drawings
MIL-STD-883
QML-38535.
QML-38535
MIL-BUL-103.
MIL-BUL-103
LM6121
smd handbook
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512Kx1 DRAM
Abstract: No abstract text available
Text: HY51V4100B Series «HYUNDAI 4M X 1bit CMOS DRAM DESCRIPTION The HY51V4100B is the new generation and fast dynamic RAM organized 4,194,304x1-bit. The HY51V4100B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V4100B
304x1-bit.
HY51V4100B
Schottk014
27J8S
50flfl
1AC10-10-MAY95
512Kx1 DRAM
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Untitled
Abstract: No abstract text available
Text: QATEL INNO VA TIO N a n d E X C E LLE N C E T P B MODE LS TViple Output High-Efficiency, Smaller-Package 25-40 Watt, DC/DC Converters DATELs new TPB Model, 25-40 Watt, triple-output DC/DC power converters bring you efficient "on-board" power processing in a cost-effective sm aller package
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0-36V
8-36V
8-72V
100ppm/Â
2bS15bl
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T73 5VDC
Abstract: BWR-5 12 volt class D schematic BWR-15/500-D5A Voltage to Current Converter dual 4-20mA Voltage to Current Converter dual 4-20mA circuit D12A D48A
Text: INNOVATION a n d EXCELLENC E RW R M O n F I £ rO A T E L . DC/DC CO N VERTER : B W B -i 2 /8 3 0 -D 4 8 A Dual Output A High-Reliability, 2" x 2" 15-20 Watt, DC/DC Converters - S E R I E S For your mid-range power requirements, it’s hard to beat the com bination of
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5-20W,
12/14/16-bit
20MHz.
95/NT,
T73 5VDC
BWR-5
12 volt class D schematic
BWR-15/500-D5A
Voltage to Current Converter dual 4-20mA
Voltage to Current Converter dual 4-20mA circuit
D12A
D48A
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Untitled
Abstract: No abstract text available
Text: • m m Chatsworth, CA M ic m m s e m i P rog ress P ow ered b y T echnology 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • Through Hole Package Capable of 600mWatts of Power Dissipation NPN General Purpose Amplifier
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600mWatts
10mAdc,
35Vdc,
2N4401
0Q04104
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EPX880-10
Abstract: No abstract text available
Text: FLASHIogic Programmable Logic Device Family June 1996, ver. 2 Features. Data Sheet • ■ ■ ■ High-performance programmable logic device PLD fam ily SRAM-based logic w ith shadow F L A S H memory elements fabricated on advanced C M O S technology
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24V10
VCC02
VCC03/VCC07
VCC05
EPX88Ã
ggggQo298e5Â
I84-Pin
132-Pin
EPX8160
208-Pin
EPX880-10
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