T-DQ12
Abstract: OQ10
Text: E L E C T R O N I C D E S I G N S INC 3QE D • 3230114 0000723 7 ■ ^ED I EDI8M16256C Eftcfronta Ottici« Inc* High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmable, Static RAM Module The EDI8M 16256C is a4096K-bit high speed C M O S Static R A M Module consisting of sixteen 16 256Kx1
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3230L14
DD007S3
EDISM16256C
256Kx16
EDI8M16256C
isa4096K-bit
256Kx1
256Kx4
256Kx16,
512Kx8
T-DQ12
OQ10
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Untitled
Abstract: No abstract text available
Text: B7 9-9 7 2N3993, 2N3993A P-CHANNEL SILICON JUN CTIO N FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 2 5 'C • CHOPPERS • HIGH SPEED COMMUTATORS Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation
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2N3993,
2N3993A
2N3993
0Q00727
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