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Text: □IXYS IGBT Module VII50-12G 3 Half-Bridge Configuration IC D C = 50 A V , = 1200 V CES V C E (s a t) = 2.6 V High Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES ^ V CGR T ,J = 25 °C to 150°C ; Rrc = 1 M il u t V GES 1200 V