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    Text: SSP3N90A A d van ced Power MOSFET FEATURES B V qss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS = 900V


    OCR Scan     		SSP3N90A 0G4D370 003b32fl O-220 7Tb4142 DD3b33D PDF