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    Untitled

    Abstract: No abstract text available
    Text: KM4 4 V 16 0 0 0 AK C MOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time(-5, -6,


    OCR Scan     		PDF 16Mx4 16Mx4, 512Kx8) KM44V16000AK 0G34B34

    m lc 945

    Abstract: TI 945 BDS945 945 npn BDS943 BDS947 0034T 947 smd
    Text: Philips Components Data sheet status Product specification date of issue April 1891 B D S 9 4 3 /9 4 5 /9 4 7 NPN silicon epitaxial base power transistors PINNING - SOT223 D ESCRIPTIO N PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature S M D envelope


    OCR Scan     		PDF BDS943/945/947 OT223) BDS944/946/948. OT223 BDS943 BDS945 BDS947 m lc 945 TI 945 945 npn 0034T 947 smd