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    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-1 OB Features • High power - P ^ b = 40.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1cjB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package RF Performance Specifications CE = 25° C


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    PDF TIM1414-1 0G22322