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    Abstract: No abstract text available
    Text: Philips Semiconductors bb 53^ 31 0Q317S T 63b NPN 1 GHz video transistors “ '— H A P X Product specification BFQ263; BFQ263A N AnER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with emitter-ballasting resistors and a


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    PDF 0Q317S BFQ263; BFQ263A 0D317b3

    KM29V64001T

    Abstract: v6400
    Text: KM29 V 6 4 0 0 1 T Fl ash ELECTRONICS 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V64001T/R is a 8M 8,388,608 x8 bit NAND Flash memory with a spare 256K(262,144)x8 bit. Its NAND cell provides the most cost-effective solution for


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    PDF V64001 200us KM29V64001T 003177G KM29V64001T v6400