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    Cree, Inc. XHP70D-00-0000-0D0UM20E5

    LED XLAMP NEUTRAL WHT 4000K 2828
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    DigiKey XHP70D-00-0000-0D0UM20E5 Digi-Reel 836 1
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    XHP70D-00-0000-0D0UM20E5 Cut Tape 836 1
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    Avnet Americas XHP70D-00-0000-0D0UM20E5 Reel 6 Weeks 1,000
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    Newark XHP70D-00-0000-0D0UM20E5 Bulk 1,000
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    Avnet Silica XHP70D-00-0000-0D0UM20E5 13 Weeks 1,000
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    Cree, Inc. XHP70D-00-0000-0D0HN20E2

    LED XLAMP COOL WHITE 5700K 2828
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    DigiKey XHP70D-00-0000-0D0HN20E2 Cut Tape 770 1
    • 1 $11.08
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    XHP70D-00-0000-0D0HN20E2 Digi-Reel 770 1
    • 1 $11.08
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    • 100 $9.418
    • 1000 $8.02194
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    Cree, Inc. XHP50D-00-0000-0D0HH440H

    LED XLAMP NEUTRAL WHT 4000K 2020
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    DigiKey XHP50D-00-0000-0D0HH440H Cut Tape 499 1
    • 1 $5.52
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    • 100 $4.692
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    Avnet Americas XHP50D-00-0000-0D0HH440H Reel 6 Weeks 500
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    Newark XHP50D-00-0000-0D0HH440H Bulk 500
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    Cree, Inc. XHP50D-00-0000-0D00J40E4

    LED XLAMP NEUTRAL WHT 4500K 2020
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    DigiKey XHP50D-00-0000-0D00J40E4 Cut Tape 495 1
    • 1 $4.76
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    XHP50D-00-0000-0D00J40E4 Digi-Reel 495 1
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    Avnet Americas XHP50D-00-0000-0D00J40E4 Reel 6 Weeks 500
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    Newark XHP50D-00-0000-0D00J40E4 Bulk 500
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    • 1000 $3.17
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    Cree, Inc. XHP50D-00-0000-0D0HJ20DT

    LED XLAMP COOL WHITE 7000K 2020
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    DigiKey XHP50D-00-0000-0D0HJ20DT Cut Tape 495 1
    • 1 $5.04
    • 10 $4.788
    • 100 $4.284
    • 1000 $3.8959
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    XHP50D-00-0000-0D0HJ20DT Digi-Reel 495 1
    • 1 $5.04
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    • 100 $4.284
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    0D0000 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Ultrasonic transmitter-receiver

    Abstract: Ultrasonic transmitter Ultrasonic transmitter receiver STK58C290A STK58C290B STK58C291 syntek AA10l
    Text: SY NT EK D E S I G N ' T E C H N O L O G Y 53E 3> Ûôl0b34 0D00003 û T -77-ij STK58C290/STK58C291 DECODER & ENCODER GENERAL DESCRIPTION The STK58C290/STK58C291 are CMOS LSI which are designed for the digital code Transmitter-Receiver system. The STK58C291 is an Encoder, STK58C290 is a Decoder.


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    l0b34 STK58C290/STK58C291 STK58C291 STK58C290 STK58C290A STK58C290B STK58C291. Ultrasonic transmitter-receiver Ultrasonic transmitter Ultrasonic transmitter receiver syntek AA10l PDF

    W06 77

    Abstract: marking W04 35 volt 4 ampere bridge rectifier W06* MARKING 200 ampere 58 volt W04 bridge rectifier marking SB3 SB320 SB340 SB360
    Text: LION EN TE RPRISES CORP 54E D T'~a3~oL 5SET0ti7 0D00004 B 1 14 BRIDGE RECTIFIER ASSEM BLIES WO PACKAGE VA AMPERE BRIDGE RECTIFIERS - TYPES W005-W10 LEAD 220 15.6) 180 (4.6) .030 Max. average rectified output at T A 50°C = 1.S amps Max, forward voltage drop per element


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    00QQ4 W005-W10 5x10x7 2x17x3 W06 77 marking W04 35 volt 4 ampere bridge rectifier W06* MARKING 200 ampere 58 volt W04 bridge rectifier marking SB3 SB320 SB340 SB360 PDF

    th50vsf1400

    Abstract: BA30
    Text: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory


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    50VSF1400/1401ACXB TH50VSF1400/1401ACXB 152-bit 216-bit 48-pin 50VSF1400/1401 th50vsf1400 BA30 PDF

    MX25L1635D

    Abstract: MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25
    Text: MX25L1635D MX25L1635D DATASHEET P/N: PM1374 1 REV. 1.5, OCT. 01, 2008 MX25L1635D Contents FEATURES . 5


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    MX25L1635D PM1374 MX25L1635D MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25 PDF

    Untitled

    Abstract: No abstract text available
    Text: MX25V8005 8M-BIT [x 1] 2.5V CMOS SERIAL FLASH FEATURES GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 8,388,608 x 1 bit structure • 256 Equal Sectors with 4K byte each - Any Sector can be erased individually • 16 Equal Blocks with 64K byte each


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    MX25V8005 100mA 50MHz 256-byte 120ms PDF

    MX25U4035

    Abstract: MX25U8035 PM1394 land pattern for Uson
    Text: MX25U4035 MX25U8035 MX25U4035/MX25U8035 DATASHEET P/N: PM1394 1 REV. 1.0, MAR. 09, 2009 MX25U4035 MX25U8035 Contents FEATURES. 5


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    MX25U4035 MX25U8035 MX25U4035/MX25U8035 PM1394 MX25U4035 MX25U8035 PM1394 land pattern for Uson PDF

    Untitled

    Abstract: No abstract text available
    Text: MX25L1673E MX25L1673E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1912 1 REV. 1.2, JAN. 14, 2014 MX25L1673E Contents 1. FEATURES. 4


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    MX25L1673E PM1912 PDF

    AT49BV802A

    Abstract: AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


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    3405E AT49BV802A AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu PDF

    w19b320

    Abstract: No abstract text available
    Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


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    W19B320AT/B w19b320 PDF

    S 3590A

    Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout


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    PDF

    M29W320DT

    Abstract: M29W320D M29W320DB TFBGA48
    Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns


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    M29W320DT M29W320DB TSOP48 TFBGA63 TFBGA48 M29W320DT M29W320D M29W320DB TFBGA48 PDF

    AM29F016D-120

    Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
    Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm


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    Am29F016D Am29F016 Am29F016B AM29F016D-120 AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13 PDF

    msc 1697

    Abstract: el 198 Response AA0482 mz 1540 switching supply pcr 606 r hasp bb a Nippon capacitors TRANSISTOR MOTOROLA MAC 223 WL 431 DSP56300
    Text: MOTOROLA Order this document by: DSP56302/D SEMICONDUCTOR TECHNICAL DATA DSP56302 Advance Information 24-BIT DIGITAL SIGNAL PROCESSOR 3 SCI Interface Program RAM 20480 x 24 or X Data Y Data Program RAM RAM RAM 19456 × 24 and × × 24 7168 24 7168 Instruction


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    DSP56302/D DSP56302 24-BIT DSP56302 DSP56300 msc 1697 el 198 Response AA0482 mz 1540 switching supply pcr 606 r hasp bb a Nippon capacitors TRANSISTOR MOTOROLA MAC 223 WL 431 PDF

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


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    KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor PDF

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


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    Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM PDF

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


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    S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032 PDF

    M15451E

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can


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    PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E PDF

    Untitled

    Abstract: No abstract text available
    Text: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3


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    W28J320B/T 16/4M PDF

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


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    S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data DSP56311 Rev. 8, 2/2005 DSP56311 24-Bit Digital Signal Processor 3 16 6 6 Memory Expansion Area EFCOP Peripheral Expansion Area Address Generation Unit Six Channel DMA Unit X Data RAM 48 K x 24 bits YAB XAB PAB DAB Y Data


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    DSP56311 24-Bit 24-Bit DSP56300 PDF

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


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    K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W28F321BT/TT 32MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide


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    W28F321BT/TT 32MBIT W28F321, W28F321 PDF

    lv8011

    Abstract: AT49BV8011 AT49BV8011T AT49LV8011 AT49LV8011T
    Text: Features • Single Supply for Read and Write: 2.7V to 3.3V BV , 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architecture • • • • • • • • • • • Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout


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    1265E 01/00/xM lv8011 AT49BV8011 AT49BV8011T AT49LV8011 AT49LV8011T PDF

    LHF00L14

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LHF00L14 Flash Memory 32M 2MB x 16 (Model No.: LHF00L14) Spec No.: EL163055 Issue Date: March 15, 2004 LHF00L14 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


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    LHF00L14 LHF00L14) EL163055 LHF00L14 PDF