Zener diode 5.6 itt
Abstract: Zener diode itt Zener diode itt 5.6 Zener diode itt 150 V itt diodes 8.2 0SGH33 1N4742A allegro 51
Text: ALLEGRO MICROSYSTEMS INC bbE D • 0S0M338 QQDbS33 460 ■ ALGR ZENER DIODES 1 WATT0, W SERIES, 5.6 V to 51 V ELECTRICAL CHARACTERISTICS at TA = + 25°C, T, < + 175°C, VF = 1.5 V Max. @ IF = 200 mA Surge Max. Zener Impedance Max. Leakage Current Current Device
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0S0M338
QQDbS33
1N4734A
1N4735A
1N4736A
1N4737A
1N4738A
1N4739A
1N4740A
1N4741A
Zener diode 5.6 itt
Zener diode itt
Zener diode itt 5.6
Zener diode itt 150 V
itt diodes 8.2
0SGH33
1N4742A
allegro 51
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ULN2083A-1
Abstract: kd 617 ULN 232 KD transistor transistor KD 617 ULN-2083A-1 ULN2031A Transistor Array differential amplifier ULN-2031A
Text: ALLEGRO MICROSYSTEMS 8 5 1 4 0 1 9 S P RA GU E. INC =53 D • 0S0M33Ô S E M I C O N D S / ICS 0003024 3 ■ ALGR 9 3 D 03824J ULN-2083A-1 TRANSISTOR ARRAY ULN-2083A-1 TRANSISTOR ARRAY This device is a general-purpose transistor array for use in medium-current switching and differential
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0S0M33Ô
03824J)
ULN-2083A-1
ULN-2083A
ULN-2031A
LN-2086A,
ULN2083A-1
kd 617
ULN 232
KD transistor
transistor KD 617
ULN2031A
Transistor Array differential amplifier
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temperature-compensated zener
Abstract: No abstract text available
Text: ALLEGRO MI CROSYSTEMS I NC =13 » • 0S0M33Ô DGD3ÖQ1 S ■ T-91 01 ZENER DIODES Process ZHO, ZHP, ZHQ, ZHR Temperature-Compensated Zener Reference Diodes * * Anode • Silicon * Buried • Silicon ZHO and Cathode on Top Epitaxial Layer Construction for Low Series Resistance
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0S0M33Ô
temperature-compensated zener
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC 33E D 0S0M33fl 0 0 0 5 5 75 1 •A.L GR S L A I'Z Î 953 M ÏK p  88â: COMPEIAN FULL-BRIDGE PWM MOTOR DRIVER NO CONNECTION 5NNECT10N ANODES V REp0R AK E PHASE RC TIMING LOGIC SUPPLY NO CONNECTION Dwg. PM-004 ABSOLUTE MAXIMUM RATINGS
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0S0M33fl
5NNECT10N
PM-004
M-004
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1N4740A
Abstract: 1N4735A 1N4742-A THZ8R2W05 1N4737A 1N4734A 1N4736A 1N4738A THZ5R6W05 THZ6R2W05
Text: ALLEGRO MICROSYSTEMS INC bbE D • 0S0M338 QQDbS33 460 ■ ALGR ZENER DIODES 1 WATT0, W SERIES, 5.6 V to 51 V ELECTRICAL CHARACTERISTICS at TA = + 25°C, T, < + 175°C, VF = 1.5 V Max. @ IF = 200 mA Surge Max. Zener Impedance Max. Leakage Current Current Device
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DSDM33A
GGGb533
1N4734A
THZ5R6W05
1N4735A
THZ6R2W05
1N4736A
THZ6R8W05
1N4737A
THZ7R5W05
1N4740A
1N4742-A
THZ8R2W05
1N4738A
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Untitled
Abstract: No abstract text available
Text: AM SIGNAL PROCESSOR Providing the AM signal processing functions for an electronicallytuned AM receiver ETR , the ULN3841A includes a balanced mixer, buffered local oscillator, IF amplifier, AM detector, scan control detec tors, and a switchable voltage regulator. The addition of a JFET
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ULN3841A
M68465.
M684131.
GSD433Ã
0S0M33Ã
RWOS-6A7894AO,
7TRS-A5609AO
7LC-502112N4,
7NRES-A5622AAG,
7HN-60064CY
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Untitled
Abstract: No abstract text available
Text: POWER TRANSISTOR u& & m Ê Ê H M a m * + ;hr I PNP POWER TRANSISTORS Electrical Characteristics at TA = 25°C Absolute Maximum Ratings Type No. It Typ. @IE@VCE MHz (A) (V) Pc (W) VcBO V ceo V EB0 !c !b •cbo Iebo (V) (V) (V) (A) (A) Max 0 VCB (mA) (V)
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2SA1186
2SA1215
2SA1216
2SA1746
2SA1859
2SA1859A
2SA1860
0S0M33A
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC T3 D • 05QM33Ö Ü003723 Ö ■ T -9 1-0 1 PR O CESS SRB Process SRB PNP Darlington Transistor Process S R B is a double-diffused silicon epitaxial P N P Darlington pair. This device is designed for use as a high-gain amplifier in audio and control circuits
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Q50M33Ã
T-91-01
T-91-01
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transistor a13
Abstract: A13 transistor
Text: ALLEGRO MICROSYSTEMS INC T3]> ] • 0504330 G0G3b37 4 P R O CESS A JA T -^ l "O I Process AJA NPN Small-Signal Transistor Process A JA is a double-diffused epitaxial silicon transistor designed for use in medium-power, general-purpose amplifiers and as a switch for line volt
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0003b37
transistor a13
A13 transistor
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0SD433
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC ^3 D • 0304336 0 0 0 3 b 3 cJ 6 ■ ALGR - r - 9 -oi PROCESS AKA Process AKA PNP Small-Signal Transistor Process A K A is a P N P silicon epitaxial planar de vice designed for use as a high-voltage switch or a low-power amplifier.
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0SQ433B
1000mA
10jjtA
240al
0SD433
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2068B
Abstract: No abstract text available
Text: 1.5 A DABLINGTON SWITCHES H igh-voltage, high-current Darlington arrays U L N 2 0 6 1 M through U L N 20 74B are designed for interface betw een low-level logic and a variety of peripheral loads such as relays, solenoids, dc and stepper motors, m agnetic print ham m ers, m ultiplexed.LED and incandescent
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ULN2064/65B
ULN2064LB
2068LB
B-1364A
2068B
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UDN6116A-1
Abstract: UDN6118A-1 UDN6118LW UDN6118A A-9643A
Text: A L L E GR O M I C R O S Y S T E M S INC 33E D 05DM33Ô Q0Q530b 2 IALGR FLUORESCENT DISPLAY DBIVERS Consisting of six or eight NPN Darlington output stages and the associated common-emitterinput stages, these drivers are designed to interface between low-level digital logic and Vacuum fluorescent
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05QM33Ã
Q0QS30b
UDN6116A/R
0SGM33Ã
6116-AND
UDN6116/18
UDN6116A-1
UDN6118A-1
UDN6118LW
UDN6118A
A-9643A
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UDS2983H
Abstract: UDS2983 UDS2981H883 UDS2981H GM003 UDS2982H 84VN
Text: ALLEGRO MICROSYS TEMS INC 33E D mßu ni.i • jpj ii-.,iiL>iUUiuü> iif iM.il I. ■ 0504338 0005577 0 ■ ÄLGR HIGH-VOLTAGE, HIGH-CURRENT SOURCE DRIVERS Series UDS2980H and UDS2980R hermetically sealed source drivers link standard low-power digital logic and relays, solenoids,
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000SS77
UDS2981
UDS2982H/R)
UDS2983
UDS2984H/R)
UDS2983H/R)
UDS2982
UDS2980H
UDS2983H
UDS2981H883
UDS2981H
GM003
UDS2982H
84VN
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Untitled
Abstract: No abstract text available
Text: DUAL FJJLL-BRIDGE PWM MOTOR DRIVER A2919SB LOAD SUPPLY E, SENSE , The A2919SB and A2919SLB motor drivers are designed to drive both windings of a bipolar stepper motor or bidirectionally control two dc motors. Both bridges are capable of sustaining 45 V and include
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A2919SB
A2919SB
A2919SLB
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EP-034
Abstract: A8958SEA UC3175 PP038
Text: A L LE GR O M I C R O S Y S T E M S INC 33E Q5G433fl 000S3S4 2 »ALGR VOICE COIL MOTOR DRIVER Providing control and drive of the voice coil motor used for head positioning in disk drive applications, the A8958SEA is a fuli-bridge driver which can be configured so that its output current is a direct
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PP-038
0SD433A
EP-034
EP-039
A8958SEA
UC3175
PP038
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Untitled
Abstract: No abstract text available
Text: LOW-DROPOVT, 3 V REGULATOR — HIGH EFFICIENCY Designed specifically to meet the requirement for extended opera tion of battery-powered equipment such as cordless and cellular telephones, the A8184SLT voltage regulator offers the reduced dropout voltage and quiescent current essential for maximum battery life.
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A8184SLT
Furthermore504330
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Untitled
Abstract: No abstract text available
Text: INTERIM ISSUE Subject to Change Without Notice Septem ber 7 ,1 9 9 4 Data Sheet 26301.2 3-PHASE BRVSHLESS D C MOTOR CONTROLLER/DRIVER W ITH BACK-EMF SENSING The A8902CLBA is a three-phase brushless dc motor controller/ driver for use in 5 V or 12 V hard-disk drives. The three half-bridge
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A8902CLBA
DS0433Ã
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Untitled
Abstract: No abstract text available
Text: HALL-EFFECT SWITCHES FOR HIGH-TEMPERATVRE OPERATION These Hall-effect switches are monolithic integrated circuits with tighter magnetic specifications, designed to operate continuously over extended temperatures to +150°C, and are more stable with both temperature and supply voltage changes. The unipolar switching
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0S0M33A
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Untitled
Abstract: No abstract text available
Text: BiMOS U 20-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS W ITH ACTIVE-DMOS PULL-DOWNS T he U C N 5812A F /E P F com bine a 2 0 -b it C M O S sh ift register, data latches, and control circuitry with high-voltage b ip o la r source drivers and active DM GS pull-dow ns fo r reduced su pply cu rre n t requirem ents.
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20-BIT
812A/EP
5812E
05D433A
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