0GDGD13 Search Results

tip 1471 transistor

Abstract: ic 307 g
Text: HARRIS m SEMICONDUCTOR T7 D E^ B O a St.'ì 0GDGD13 1 fi r - 3 / - * 5 HMF-0610 2—20 GHz 12.5 dB GAIN 150 mW HIGH GAIN POWER GaAs FET PRODUCT DATA JANUARY 1987 HARRIS MICROWAVE SEMICONDUCTOR FEATURES DEVICE OUTLINE □ □ □ □ □ □ □ 6 dB High Gain Typical @ 18 GHz