0D00L Search Results

diode B14A

Abstract: B14A B14A diode crystal diode if6 hall hall o4E DIODO LK diodo FAG 50 FAG 50 diode FAG 32 diode
Contextual Info: MIL SPECS IC|D00D15S 0D00L.S2 S | « 1^ - 19500/91 31^ A»eod»cnt 1 1 M y i960 KXLITARI STFEUFICATIO SDdCOOTWCTOT DEVICE DIODE, SILICOTI, POWER RECTIFUR TXTE W2153 Thla Ancndment forme a part of Military ' Specification KIL-S-19500/9HS1kC j, 2 No t 59 Page 1, paragraph 1.1 table., (l (surge) column: Delete "50" pertaining to

Contextual Info: COMPUTER SYSTEMS LSI/CSI EbE D • S3QMbQb OOOQbTfi Q ■ T-ZA'ft'l'5 " LS7263 □ ■ "1 3 l i i BRUSHLESS MOTOR CIRCUITS L S I Revised July 1989 BRUSHLESS DC MOTOR SPEED CONTROLLER FEATURES: • Highly accurate speed regulation ±.1% derived from XTL controlled time base.

report on power line carrier communication

Abstract: RJ11 to RS232 ttl
Contextual Info: XECOM XE9614/XE9614I 6-10-93 14,4ktops FAX & DATA Modem with MNP5/V.42bis Description Features Xecom's XE9614 combines a 14.4 Kbp6 V.32bis data modem, 14.4 Kbps Group III Send/ Receive fax modem and DAA into a highly compact device. The TTL level, serial interface allows quick integration into virtually any

ASUS

Contextual Info: un Galileo Technology- System Controller with GT-64010A Preliminary PCI Interface for R4XXX/ Revision 1.1 R5000 Family CPUs December 1996 N O T E : A lw ays contact G alileo Technology for possible updates before starting a design. FEATURES Integrated system controller with PCI bus interface for

Contextual Info: F4000 / MINIATURE CERAMIC SMD 3.3 V OSCILLATOR Fox stands on the leading edge of technology with the new 3.3 volt oscillator. Among the many benefits of the F4000 are increased battery life, reduced heat generation and improved EMI. The super small package provides the

Contextual Info: Q2334 DUAL DIRECT DIGITAL SYNTHESIZER i» "4: ‘ ^ Z ^ Y L S I P ro d u c ts T0D333t. OOOQSTE Mil / j-Â'.'i- C O NTENTS NRC Enable. 14 Accumulator Reset Register O the r Q U ALC O M M VISI Products FEATURES. 4

transistor MWTA 06

Abstract: 60/transistor MWTA 06
Contextual Info: M M ic r o w a v e techno lo g y 2 WATT POWER OUTPUT AT 6 GHz HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 5 mm GATE WIDTH DIAMOND-UKE CARBON DLC PASSIVATION T - 1 4 12 GHz High Power GaAs FET M • • • • • w M M M « r iÉ n B H iin iÉ É n iD n n n în

MICROWAVE ASSOCIATES

Abstract: pa 3029 b Dielectric Resonator Oscillator DRO high power FET transistor s-parameters 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters 5218 chip ic TIP 298
Contextual Info: M/A-C'OM' SEMICONDUCTOR _ci3 DE |St.45E] M □□00L30 S MA4F001 Series ¡88 Gallium Arsenide Field ^ Effect Transistors % S t su* mi IP I i Description a The MA4F001 series of gallium arsenide fieldeffect transistors (GaAs FETs) is a series of low power Schottky barrier gate devices with a 1

PS 9829 m

Abstract: 0x82C 0x824
Contextual Info: in— : „ Galileo Technology- System Controller with GT-64010A PCI Interface for R4XXX/ P relim inary R5000 Family CPUs December 1996 N O T E : A lw ays contact G alileo Technology for possible updates before starting a design. FEATURES Integrated system controller with PCI bus interface for

capacitor PMR 202 DM

Abstract: act30b 41516 BC 550 c3 xc PM4341A-RI PM4341A SLC96 TR-TSY-000008 voice transcever circuit diagram TR-TSY-000312
Contextual Info: PMC-Sierra, Inc. PM4341A T1XC ISSUE 6 T1 FRAMER/TRANSCEIVER FEATURES • Integrates a full-featured T1 framer and line interface in a single device with analog circuitry for receiving and transmitting DSX-1 compatible signals and digital circuitry for terminating the duplex DS-1 signal.

Contextual Info: 5642214 N/A-CON m/a-com semiconductor SEMICONDUCTOR 930 T3 00638 PE|St4ESm T '3 < 7 . o DDDDtaa s ' 0 V~ MA4F200 Series ûallium Arsenide Power Field Effect Transistor GaAs FET Preliminary Data Sheet Description and Applications The MA4F200 series is a 1 micron recessed gate

MX28F4000

Contextual Info: m M X 2 8 F4 0 0 0 MACRONIX. INC. 4 M -B IT 5 1 E K x S C M O S F L A S H M E M O R Y FEATURES • 524,288 bytes by 8-bit organization • Fast access time: 120/150/200ns • Low power consumption - 50mA maximum active current - • • • • 1 0 0 nA m a xim u m standby current