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    Untitled

    Abstract: No abstract text available
    Text: STGW40H65DFB STGWT40H65DFB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V


    Original     		PDF STGW40H65DFB STGWT40H65DFB O-247 SC12850 DocID024363

    Untitled

    Abstract: No abstract text available
    Text: GB02SLT12-214 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB02SLT12-214. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 09-SEP-2013 $ * * GeneSiC Semiconductor Inc.


    Original     		PDF GB02SLT12-214 GB02SLT12-214. 09-SEP-2013 GB02SLT12-214 GB02SLT12 GB02SLT12 05E-15

    Untitled

    Abstract: No abstract text available
    Text: GAP3SLT33-214 Silicon Carbide Power Schottky Diode VRRM IF Tc ≤ 125°C QC Features Package •       RoHS Compliant Industry’s leading low leakage currents 175 °C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of VF


    Original     		PDF GAP3SLT33-214 214AA GAP3SLT33 39E-14 01E-11 00E-10 00E-03 00E-01

    RAD SMD MARKING CODE

    Abstract: smd diode marking code TO3
    Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications


    Original     		PDF STRH40N6 STRH40N6S1 DocID18351 RAD SMD MARKING CODE smd diode marking code TO3

    Untitled

    Abstract: No abstract text available
    Text: GB01SLT06-214 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •        RoHS Compliant 650 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability


    Original     		PDF GB01SLT06-214 214AA s1SLT06 GB01SLT06 57E-18 40E-05 12E-11 00E-10

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened


    Original     		PDF STRH40P10 O-254AA SC06140p DocID18354

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened


    Original     		PDF STRH40P10 O-254AA SC06140p DocID18354

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened


    Original     		PDF STRH40P10 O-254AA SC06140p DocID18354

    Untitled

    Abstract: No abstract text available
    Text: STGW40H65DFB STGWT40H65DFB 650 V, 40 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V


    Original     		PDF STGW40H65DFB STGWT40H65DFB O-247 SC12850 DocID024363

    Untitled

    Abstract: No abstract text available
    Text: STGW40H65DFB STGWT40H65DFB 650 V, 40 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V


    Original     		PDF STGW40H65DFB STGWT40H65DFB O-247 SC12850 DocID024363

    DO-214 diode

    Abstract: No abstract text available
    Text: GB01SLT06-214 Silicon Carbide Power Schottky Diode VRRM IF Tc = 25°C IF (Tc ≤ 150°C) QC Features Package •        RoHS Compliant Industry’s leading low leakage currents 175 °C maximum operating temperature Temperature independent switching behavior


    Original     		PDF GB01SLT06-214 214AA GB01SLT06 57E-18 40E-05 12E-11 00E-10 00E-03 DO-214 diode

    Untitled

    Abstract: No abstract text available
    Text: GB01SLT12-214 Silicon Carbide Power Schottky Diode VRRM IF Tc = 25°C IF (Tc ≤ 150°C) QC Features Package •        RoHS Compliant Industry’s leading low leakage currents 175 °C maximum operating temperature Temperature independent switching behavior


    Original     		PDF GB01SLT12-214 214AA TEMP-24) GB01SLT12 27E-19 90E-11 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: GAP3SHT33-CAU Silicon Carbide Power Schottky Diode Chip VRRM VF IF QC = = = = 3300 V 1.7 V 0.3 A 52 nC Features •      3300 V Schottky rectifier 175 °C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of VF


    Original     		PDF GAP3SHT33-CAU TEMP-24) GAP3SHT33 39E-14 01E-11 00E-10 00E-03 00E-01

    Untitled

    Abstract: No abstract text available
    Text: GB01SLT12-214 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB01SLT12-214. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 09-SEP-2013 $ * * GeneSiC Semiconductor Inc.


    Original     		PDF GB01SLT12-214 GB01SLT12-214. 09-SEP-2013 GB01SLT12-214 TEMP-24) GB01SLT12 27E-19 90E-11

    Untitled

    Abstract: No abstract text available
    Text: STB26NM60N, STF26NM60N, STP26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFETs in D2PAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB Order codes 3 VDS RDS on max ID 600 V 0.165 Ω 20 A STB26NM60N 1 3 D²PAK 1


    Original     		PDF STB26NM60N, STF26NM60N, STP26NM60N O-220FP O-220 STB26NM60N STF26NM60N O-220FP O-220

    STD4N62K3

    Abstract: 4n62k
    Text: STB4N62K3, STD4N62K3 N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3 Power MOSFETs in D²PAK and DPAK packages Datasheet - production data Features Order codes VDS RDS on max. ID PW 620 V 2Ω 3.8 A 70 W STB4N62K3 TAB STD4N62K3 TAB • 100% avalanche tested


    Original     		PDF STB4N62K3, STD4N62K3 STB4N62K3 AM01476v1 DocID18337 STD4N62K3 4n62k

    Untitled

    Abstract: No abstract text available
    Text: GB01SLT12-214 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •        RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability


    Original     		PDF GB01SLT12-214 214AA TEMP-24) GB01SLT12 27E-19 90E-11 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: GAP3SHT33-CAL Silicon Carbide Power Schottky Diode Chip VRRM VF IF QC = = = = 3300 V 1.7 V 0.3 A 52 nC Features •      3300 V Schottky rectifier 175 °C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of VF


    Original     		PDF GAP3SHT33-CALÂ TEMP-24) GAP3SHT33 39E-14 01E-11 00E-10 00E-03 00E-01

    Untitled

    Abstract: No abstract text available
    Text: GAP3SLT33-214 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •       RoHS Compliant 3300 V Schottky rectifier 175 °C maximum operating temperature Electrically isolated base-plate Positive temperature coefficient of VF


    Original     		PDF GAP3SLT33-214 214AA GAP3SLT33 39E-14 01E-11 00E-10 00E-03 00E-01

    Untitled

    Abstract: No abstract text available
    Text: GB02SLT12-214 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •        RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability


    Original     		PDF GB02SLT12-214 214AA GB02SLT12-214 GB02SLT12 GB02SLT12 05E-15 3E-05 61E-10

    Untitled

    Abstract: No abstract text available
    Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications


    Original     		PDF STRH40N6 STRH40N6S1

    Untitled

    Abstract: No abstract text available
    Text: GB02SLT12-214 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •        RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability


    Original     		PDF GB02SLT12-214 214AA GB02SLT12-214 GB02SLT12 GB02SLT12 05E-15 3E-05 61E-10

    Untitled

    Abstract: No abstract text available
    Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications


    Original     		PDF STRH40N6 STRH40N6S1

    Untitled

    Abstract: No abstract text available
    Text: GB02SLT12-214 Silicon Carbide Power Schottky Diode VRRM IF Tc = 25°C IF (Tc ≤ 150°C) QC Features Package •        RoHS Compliant Industry’s leading low leakage currents 175 °C maximum operating temperature Temperature independent switching behavior


    Original     		PDF GB02SLT12-214 214AA GB02SLT12-214 GB02SLT12 GB02SLT12 05E-15 3E-05 61E-10