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Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT20 2 3 1 20 LOC BY - REVISIONS DIST B ALL RIGHTS RESERVED. E P LTR DESCRIPTION M1 DATE COLOR CODE DETAILS ADDED DWN APVD TJ 09JAN2014 JK 33.0 D D PIN BODY SEE TABLE 1.6 9 SPRING PLATING ZONES
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COPYRIGHT20
09JAN2014
01JUN2012
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Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2011 2 3 1 2011 LOC - REVISIONS DIST B ALL RIGHTS RESERVED. - P LTR DESCRIPTION AD1 DATE COLOR CODE DETAILS ADDED DWN APVD TJ 09JAN2014 JK 31.5 D D PLATING ZONES 1.6 9 SPRING PIN BODY SEE TABLE
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09JAN2014
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Text: VN5MB02-E Smart Power driver for motorbike blinker Datasheet - production data Description The VN5MB02-E is a Smart Power driver for motorbike blinker; it is connected between the battery positive terminal VCC pin and a mechanical switch to the right or left side. As soon
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VN5MB02-E
VN5MB02-E
SO-16
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marking O1
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Text: ESDALC5-1BM2, ESDALC5-1BT2 Single-line low capacitance Transil , transient surge voltage suppressor TVS for ESD protection Datasheet − production data Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as:
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OD882
OD882T
DocID16936
marking O1
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Text: STD9N40M2 N-channel 400 V, 0.59 Ω typ., 6 A MDmesh II Plus low Qg Power MOSFET in a DPAK package Datasheet - preliminary data Features Order code VDS @ TJmax RDS on max STD9N40M2 TAB 0.8 Ω 450 V ID 6A • Extremely low gate charge 1 3 • Lower RDS(on) x area vs previous generation
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STD9N40M2
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Text: ESDALC5-1BM2, ESDALC5-1BT2 Single-line low capacitance Transil , transient surge voltage suppressor TVS for ESD protection Datasheet − production data Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as:
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OD882
OD882T
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Text: WTK4435 Surface Mount P-Channel Enhancement Mode MOSFET 8 7 6 D 3 S 5 D 4 G -10 AMPERES DRAIN SOURCE VOLTAGE D S 2 Features: DRAIN CURRENT D S 1 P b Lead Pb -Free -30 VOLTAGE * Super high dense * Cell design for extremely low R DS(ON) * -30V/-10A,R DS(ON)<30mΩ@VGS = -10V
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WTK4435
-30V/-10A
-30V/-7A
WTK4435,
09-Jan-2014
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Text: VNP35N07-E OMNIFET fully autoprotected Power MOSFET Datasheet - production data Description The VNP35N07-E is a monolithic device made using STMicroelectronics VIPower technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications.
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VNP35N07-E
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MX25L6406EM2I-12G TR
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Text: T2550-12T, T2550-12G 1200 V 25 A Snubberless Triac Datasheet − production data Description A2 Its 1200 V blocking voltage enables use in 3-phase industrial application. Its noise immunity and dynamic commutation makes it suitable for either for inductive, capacitive or resistive load
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T2550-12T,
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O-220AB.
O-220AB
T2550-12T)
T2550-12T
T2550-12G)
MX25L6406EM2I-12G TR
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Text: STEVAL-IKM001V1 dSPIN product evaluation kit based on the L6470H Data brief Description The STEVAL-IKM001V1 is a kit composed of 1 EVAL6470H evaluation board + 1 STEVALPCC009V2 communication board, and 2 samples each of ST’s L6470H and L6470PD devices. The EVAL6470H evaluation board is a fully
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STEVAL-IKM001V1
L6470H
STEVAL-IKM001V1
EVAL6470H
STEVALPCC009V2
L6470H
L6470PD
STEVAL-PCC009V2
L6470
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Text: VNP35N07-E, VNB35N07-E OMNIFET fully autoprotected Power MOSFET Datasheet - production data Description 3 3 1 The VNP35N07-E and VNB35N07-E are monolithic devices made using STMicroelectronics VIPower technology, intended for replacement of standard Power
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VNP35N07-E,
VNB35N07-E
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VNP35N07-E
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Text: STLUX385A Digital controller for lighting and power conversion applications with 6 programmable PWM generators, 96 MHz PLL, DALI Datasheet - production data TSSOP38 Features • 6 programmable PWM generators SMEDs (state machine event driven) – 10 ns event detection and reaction
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STLUX385A
TSSOP38
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