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    Untitled

    Abstract: No abstract text available
    Text: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive


    Original
    512Mb: MT48H32M16LF MT48H16M32LF/LG 09005aef82ea3742/Source: 09005aef82ea3752 PDF

    SMD 5 PIN CODE G7

    Abstract: smd transistor m6 smd diode B3 smd diode code B2 m7 smd diodes marking code E2 SMD smd diode M1 VFBGA marking code C3 SMD Transistor smd transistor h9
    Text: 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive edge of system clock


    Original
    512Mb: MT48H32M16LF MT48H16M32LF/LG 09005aef82ea3742/Source: 09005aef82ea3752 SMD 5 PIN CODE G7 smd transistor m6 smd diode B3 smd diode code B2 m7 smd diodes marking code E2 SMD smd diode M1 VFBGA marking code C3 SMD Transistor smd transistor h9 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance‡ 128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H8M16LF – 2 Meg x 16 x 4 banks MT48H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive edge of system clock


    Original
    128Mb: MT48H8M16LF MT48H4M32LF 09005aef82ea3742/Source: 09005aef82ea3752 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.7–1.95V • Fully synchronous; all signals registered on positive


    Original
    512Mb: MT48H32M16LF MT48H16M32LF/LG 09005aef82ea3742/Source: 09005aef82ea3752 PDF