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    MT46H32M16LFBF

    Abstract: MT46H32M16LFBF-6 MT46H32M16LFCK-75 sac105 MT46H32M16LFCK-6 MT46H32M16LFCK smd diode s8 lp-ddr2 MT46H16M32LFCM-6 smd diode S4
    Text: TN-46-16: 512Mb Mobile DDR: 95nm to 78nm Introduction Technical Note 512Mb Mobile DDR: 95nm to 78nm Product Transition Guide Introduction This document describes critical product differences associated with the 512Mb Mobile LP DDR SDRAM product as it transitions from 95nm process technology to 78nm


    Original     		TN-46-16: 512Mb 09005aef82dfb176 09005aef82dfb194 tn4616 MT46H32M16LFBF MT46H32M16LFBF-6 MT46H32M16LFCK-75 sac105 MT46H32M16LFCK-6 MT46H32M16LFCK smd diode s8 lp-ddr2 MT46H16M32LFCM-6 smd diode S4 PDF