TCO 706
Abstract: No abstract text available
Text: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB MT45W4ML16BFB MT45W2ML16BFB Features Figure 1: Ball Assignment 54-Ball FBGA • • • • • • • • Single device supports asynchronous, page, and burst
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MT45W4MW16BFB
MT45W2MW16BFB
MT45W4ML16BFB
MT45W2ML16BFB
54-Ball
09005aef80be2036/09005aef80be1fbd
TCO 706
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB MT45W4ML16BFB MT45W2ML16BFB Features Figure 1: Ball Assignment 54-Ball FBGA For the latest data sheet, please refer to Micron’s Web site:
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09005aef80be2036/09005aef80be1fbd
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PX3541
Abstract: PX3551 Burst CellularRAM Memory PW245 T2025
Text: ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features Figure 1: Ball Assignment 54-Ball FBGA For the latest data sheet, please refer to Micron’s Web site: www.micron.com/datasheets.
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MT45W4MW16BFB
MT45W2MW16BFB
54-Ball
Int/03
09005aef80be2036/09005aef80be1fbd
PX3541
PX3551
Burst CellularRAM Memory
PW245
T2025
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Untitled
Abstract: No abstract text available
Text: 4 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ • Random Access Time: 70ns
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09005aef80be1fbd
pdf/09005aef80be2036
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PX245
Abstract: PX2511 pw251 BCR150
Text: ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features Figure 1: Ball Assignment 54-Ball FBGA For the latest data sheet, please refer to Micron’s Web site: www.micron.com/datasheets.
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09005aef80be2036/09005aef80be1fbd
PX245
PX2511
pw251
BCR150
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MT45W4MW16B
Abstract: MT45W4MW16BFB-708LWT
Text: 64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAMTM 1.0 Memory MT45W4MW16B* *Note: Not recommended for new designs. For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/products/psram/
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MT45W4MW16B*
09005aef80be1fbd/Source:
09005aef80be2036
MT45W4MW16B
MT45W4MW16BFB-708LWT
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Untitled
Abstract: No abstract text available
Text: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAMTM 1.0 Memory MT45W4MW16BFB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages 1.70V–1.95V VCC
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MT45W4MW16BFB
09005aef80be1fbd/Source:
09005aef80be2036
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DEVICE MARKING CODE table
Abstract: INFINEON transistor marking INFINEON TVS diode process marking code C5 marking code j6 sus material 304 MT45W4MW16B thd202
Text: 4 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.0 MEMORY ASYNC/PAGE/BURST CellularRAMTM 1.0 MEMORY MT45W4MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ
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MT45W4MW16BFB
54-Ball
09005aef80be1fbd
pdf/09005aef80be2036
DEVICE MARKING CODE table
INFINEON transistor marking
INFINEON TVS diode process
marking code C5
marking code j6
sus material 304
MT45W4MW16B
thd202
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Untitled
Abstract: No abstract text available
Text: 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ
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MT45W4MW16BFB
MT45W2MW16BFB
54-Ball
pdf/09005aef80be2036
09005aef80be1fbd
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MT45W4MW16BFB-708LWT
Abstract: No abstract text available
Text: x16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAMTM 1.0 Memory MT45W4MW16BFB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages 1.70V–1.95V VCC
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MT45W4MW16BFB
09005aef80be1fbd/Source:
09005aef80be2036
MT45W4MW16BFB-708LWT
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