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    08MAY2007 Search Results

    08MAY2007 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3650

    Abstract: 2Sc3650 equivalent MARKING CF
    Text: 2SC3650 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-89 FEATURES Low collector-emitter saturation voltage VCE sat High DC current gain Large current capacity LF amp, various drivers, muting circuit MAXIMUM RATINGS (TA=25 oC unless otherwise noted)


    Original     		PDF 2SC3650 OT-89 08-May-2007 2SC3650 2Sc3650 equivalent MARKING CF

    2SD1898

    Abstract: 100MHZ
    Text: 2SD1898 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description SOT-89 The 2SD1898 is designed for switching applications. Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. A B


    Original     		PDF 2SD1898 OT-89 2SD1898 500mA, 500mA 100MHZ 08-May-2007 100MHZ

    KDS 4.000 Crystal

    Abstract: AN3060 digital weight KDS crystal 8.000 quartz crystal kds 4.000 CXO 049 KDS 4.000 oscillator citizen 120 Digital Alarm Clock quartz kds kds 07
    Text: M41T82 M41T83 Serial I2C bus RTC with battery switchover Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows SOX18 – Much better accuracies achievable using built-in programmable analog and digital


    Original     		PDF M41T82 M41T83 SOX18) QFN16, VFQFPN16) M41T83S M41T83R M41T83Z KDS 4.000 Crystal AN3060 digital weight KDS crystal 8.000 quartz crystal kds 4.000 CXO 049 KDS 4.000 oscillator citizen 120 Digital Alarm Clock quartz kds kds 07

    STGP19NC60WD

    Abstract: No abstract text available
    Text: STGP19NC60W N-channel 600V - 19A - TO-220 Ultra fast PowerMESH IGBT PRELIMINARY DATA Features Type VCES STGP19NC60W 600V VCE sat IC @100°C (max)@25°C < 2.5V 22A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptbility)


    Original     		PDF STGP19NC60W O-220 O-220 STGP19NC60W STGP19NC60WD

    GW19NC60WD

    Abstract: gw19nc60w
    Text: STGW19NC60WD STGP19NC60WD N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT Features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60WD 600V < 2.5V 22A STGW19NC60WD 600V < 2.5V 23A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction


    Original     		PDF STGW19NC60WD STGP19NC60WD O-220 O-247 O-220 GW19NC60WD gw19nc60w

    STB13NM50N-1

    Abstract: STF13NM50N STB13NM50N STP13NM50N STW13NM50N F13NM50N
    Text: STB13NM50N/-1 - STF13NM50N STP13NM50N - STW13NM50N N-channel 500V - 0.250Ω - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STB13NM50N 550V <0.32Ω 12A STB13NM50N-1 550V <0.32Ω 12A STF13NM50N


    Original     		PDF STB13NM50N/-1 STF13NM50N STP13NM50N STW13NM50N O-220/FP O-247-I2/D2PAK STB13NM50N STB13NM50N-1 STP13NM50N STB13NM50N-1 STF13NM50N STB13NM50N STW13NM50N F13NM50N

    marking codes transistors sot-223

    Abstract: 2STF1550 transistor marking 551 sot-89 N1550 JESD97 P025H 2STN1550
    Text: 2STF1550 2STN1550 Low voltage high performance NPN power transistors Preliminary Data Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Surface mounting devices in medium power SOT-89 and SOT-223 packages


    Original     		PDF 2STF1550 2STN1550 OT-89 OT-223 OT-89 OT-223 2STF1550 2STN1550 marking codes transistors sot-223 transistor marking 551 sot-89 N1550 JESD97 P025H

    5 bit binary multiplier

    Abstract: KDS 6.000 MHZ crystal M41T93 VSOJ20 AI11822
    Text: M41T93 Serial SPI bus RTC with battery switchover Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows SOX18 – Much better accuracies achievable using built-in programmable analog and digital


    Original     		PDF M41T93 SOX18) QFN16, M41T93S: M41T93R: M41T93Z: 5 bit binary multiplier KDS 6.000 MHZ crystal M41T93 VSOJ20 AI11822

    M41T93

    Abstract: No abstract text available
    Text: M41T93 Serial SPI bus real-time clock with battery switchover Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows SOX18 – Much better accuracies achievable using built-in programmable analog and digital


    Original     		PDF M41T93 SOX18) QFN16, M41T93S: M41T93R: M41T93Z: M41T93

    KDS 4.000 Crystal

    Abstract: KDS crystal 8.000 AN3060 digital weight AN3060 quartz crystal kds 4.000 M41T82 M41T83 VSOJ20 KDS 4.000 oscillator M41T83Z
    Text: M41T82 M41T83 Serial I2C bus RTC with battery switchover Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows SOX18 – Much better accuracies achievable using built-in programmable analog and digital


    Original     		PDF M41T82 M41T83 SOX18) QFN16, VFQFPN16) M41T83S M41T83R M41T83Z KDS 4.000 Crystal KDS crystal 8.000 AN3060 digital weight AN3060 quartz crystal kds 4.000 M41T82 M41T83 VSOJ20 KDS 4.000 oscillator M41T83Z

    KDS 4.000 oscillator

    Abstract: KDS 4.000 Crystal project of digital count up and countdown timer KDS 32kHZ crystal project of countdown timer digital count up and countdown timer digital countdown timer quartz kds quartz crystal kds 4.000 KDS Crystals oscillator
    Text: M41T82 M41T83 Serial I2C bus RTC with battery switchover Features • 2.0V to 5.5V clock operating voltage ■ Ultra-low battery supply current of 365nA ■ Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month, year, and century


    Original     		PDF M41T82 M41T83 365nA QFN16, VFQFPN16) M41T83S M41T83R M41T83Z SOX18 18-pin, KDS 4.000 oscillator KDS 4.000 Crystal project of digital count up and countdown timer KDS 32kHZ crystal project of countdown timer digital count up and countdown timer digital countdown timer quartz kds quartz crystal kds 4.000 KDS Crystals oscillator

    Untitled

    Abstract: No abstract text available
    Text: STK850 N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK850 30V <0.0029Ω 71nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested


    Original     		PDF STK850 2002/95/EC

    KDS 4.000 Crystal

    Abstract: CXO 049 CXO 046 M41T82 M41T83 VSOJ20 KDS 4.000 oscillator n641 quartz crystal kds 4.000 1418h
    Text: M41T82 M41T83 Serial I2C bus RTC with battery switchover Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows SOX18 – Much better accuracies achievable using built-in programmable analog and digital


    Original     		PDF M41T82 M41T83 SOX18) QFN16, VFQFPN16) M41T83S M41T83R M41T83Z KDS 4.000 Crystal CXO 049 CXO 046 M41T82 M41T83 VSOJ20 KDS 4.000 oscillator n641 quartz crystal kds 4.000 1418h

    GF19NC60WD

    Abstract: JESD97 STGF19NC60WD
    Text: STGF19NC60WD N-channel 600V - 7A - TO-220 Ultra fast PowerMESH IGBT PRELIMINARY DATA Features Type VCES STGF19NC60WD 600V • VCE sat IC @100°C (max)@25°C < 2.5V 7A 3 High frequency operation 1 ■ Low CRES / CIES ratio (no cross-conduction susceptibility)


    Original     		PDF STGF19NC60WD O-220 O-220FP GF19NC60WD JESD97 STGF19NC60WD

    2SD1898

    Abstract: NPN Silicon Epitaxial Planar Transistor 100MHZ
    Text: 2SD1898 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description SOT-89 The 2SD1898 is designed for switching applications. Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. A B


    Original     		PDF 2SD1898 OT-89 2SD1898 500mA, 500mA 100MHZ 08-May-2007 NPN Silicon Epitaxial Planar Transistor 100MHZ

    2SA1201

    Abstract: 2SC2881
    Text: 2SA1201 PNP Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-89 FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 E C B MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter


    Original     		PDF 2SA1201 OT-89 2SC2881 -500mA -50mA -500mA -100mA 08-May-2007 2SA1201 2SC2881

    12F30L

    Abstract: A 6069 H 6069 marking STS12NF30L
    Text: STS12NF30L N-channel 30 V, 0.008 Ω, 12 A STripFET II Power MOSFET in SO-8 package Datasheet — production data Features Order code VDSS RDS on ID STS12NF30L 30 V < 0.009 Ω 12 A 7 6 5 8 • Standard outline for easy automated surface mount assembly ■


    Original     		PDF STS12NF30L 12F30L A 6069 H 6069 marking STS12NF30L

    Untitled

    Abstract: No abstract text available
    Text: BCPA94 PNP Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 FEATURES High voltage: VCEO= 400V min @ IC= 1mA High current gain: IC=300 mA @ 25oC Complementary to BCPA44 o MAXIMUM RATINGS (TA=25 C unless otherwise noted)


    Original     		PDF BCPA94 OT-89 BCPA44 -100mA 08-May-2007 -10mA -50mA

    C3459

    Abstract: No abstract text available
    Text: M41T82 M41T83 Serial I2C bus RTC with battery switchover Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows SOX18 – Much better accuracies achievable using built-in programmable analog and digital


    Original     		PDF M41T82 M41T83 SOX18) M41T83S M41T83R M41T83Z C3459

    N3PF06

    Abstract: STN3PF06 JESD97
    Text: STN3PF06 P-channel 60 V - 0.20 Ω - 2.5 A - SOT-223 STripFET II Power MOSFET Features Type VDSS RDS on max ID STN3PF06 60 V < 0.22 Ω 2.5 A • Extremely dv/dt capability ■ 100% avalanche tested ■ 2 1 2 3 SOT-223 Application oriented characterization


    Original     		PDF STN3PF06 OT-223 N3PF06 STN3PF06 JESD97

    S12NF30L

    Abstract: JESD97 STS12NF30L
    Text: STS12NF30L N-channel 30V - 0.008Ω - 12A SO-8 STripFET II Power MOSFET Features Type VDSS RDS on ID STS12NF30L 30V <0.009Ω 12A • Standard outline for easy automated surface mount assembly ■ Low threshold drive S0-8 Description This Power MOSFET is the latest development of


    Original     		PDF STS12NF30L S12NF30L JESD97 STS12NF30L

    JESD97

    Abstract: K850 STK850
    Text: STK850 N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK850 30V <0.0029Ω 71nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested


    Original     		PDF STK850 2002/95/EC JESD97 K850 STK850

    STF13NM50N

    Abstract: STW13NM50N STB13NM50N-1 P13NM50N STB13NM50N STP13NM50N f13nm50n
    Text: STB13NM50N/-1 - STF13NM50N STP13NM50N - STW13NM50N N-channel 500 V - 0.250 Ω - 12 A MDmesh II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK Features Type VDSS @Tjmax RDS(on) max ID STB13NM50N 550 V 0.32 Ω 12 A STB13NM50N-1 550 V 0.32 Ω


    Original     		PDF STB13NM50N/-1 STF13NM50N STP13NM50N STW13NM50N O-220 O-247 O-220FP STB13NM50N STB13NM50N-1 STF13NM50N STW13NM50N STB13NM50N-1 P13NM50N STB13NM50N f13nm50n

    04MAR2008

    Abstract: No abstract text available
    Text: STB13NM50N/-1 - STF13NM50N STP13NM50N - STW13NM50N N-channel 500 V - 0.250 Ω - 12 A MDmesh II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK Features Type VDSS @Tjmax RDS(on) max ID STB13NM50N 550 V 0.32 Ω 12 A STB13NM50N-1 550 V 0.32 Ω


    Original     		PDF STB13NM50N/-1 STF13NM50N STP13NM50N STW13NM50N O-220 O-247 O-220FP STB13NM50N STB13NM50N-1 04MAR2008