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    08APR2003 Search Results

    08APR2003 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M29DW324D

    Abstract: M29DW324DB M29DW324DT TFBGA48 TFGBA48
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW324DT M29DW324DB TSOP48 16Mbit 16Mbit TFBGA63 M29DW324D M29DW324DB M29DW324DT TFBGA48 TFGBA48

    IS1651

    Abstract: M29DW323D M29DW323DB M29DW323DT TFBGA48
    Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW323DT M29DW323DB 24Mbit IS1651 M29DW323D M29DW323DB M29DW323DT TFBGA48

    Be 555

    Abstract: No abstract text available
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW324DT M29DW324DB 16Mbit 16Mbit Be 555

    Untitled

    Abstract: No abstract text available
    Text: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 8Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)


    Original     		PDF M45PE80 33MHz 4014h)

    Untitled

    Abstract: No abstract text available
    Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW323DT M29DW323DB 24Mbit

    Untitled

    Abstract: No abstract text available
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns


    Original     		PDF M29DW324DT M29DW324DB TSOP48 16Mbit 16Mbit TFBGA63

    M45PE80

    Abstract: numonyx M45PE80 VFQFPN8 E4247 SO8 Wide Package
    Text: M45PE80 8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 8 Mbit of Page-Erasable Flash memory


    Original     		PDF M45PE80 4014h) M45PE80 numonyx M45PE80 VFQFPN8 E4247 SO8 Wide Package

    AI05

    Abstract: No abstract text available
    Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW323DT M29DW323DB 24Mbit AI05

    Untitled

    Abstract: No abstract text available
    Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW323DT M29DW323DB 24Mbit

    Marking STMicroelectronics Single digit week

    Abstract: VDFPN8 package M45PE80 SO16 wide package
    Text: M45PE80 8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 50 MHz clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 8 Mbit of Page-Erasable Flash memory


    Original     		PDF M45PE80 4014h) Marking STMicroelectronics Single digit week VDFPN8 package M45PE80 SO16 wide package

    TFBGA48

    Abstract: M29DW323D M29DW323DB M29DW323DT
    Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW323DT M29DW323DB 24Mbit TFBGA48 M29DW323D M29DW323DB M29DW323DT

    Untitled

    Abstract: No abstract text available
    Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns


    Original     		PDF M29DW323DT M29DW323DB TSOP48 24Mbit TFBGA63

    120820

    Abstract: M29DW323DB
    Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW323DT M29DW323DB 24Mbit 120820 M29DW323DB

    Untitled

    Abstract: No abstract text available
    Text: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 8Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)


    Original     		PDF M45PE80 25MHz 4014h)

    Untitled

    Abstract: No abstract text available
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW324DT M29DW324DB TSOP48 16Mbit 16Mbit TFBGA63

    M29DW324D

    Abstract: M29DW324DB M29DW324DT TFBGA48
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns


    Original     		PDF M29DW324DT M29DW324DB TSOP48 16Mbit 16Mbit TFBGA63 M29DW324D M29DW324DB M29DW324DT TFBGA48

    TFBGA63

    Abstract: M29DW323D M29DW323DB M29DW323DT TFBGA48
    Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns


    Original     		PDF M29DW323DT M29DW323DB TSOP48 24Mbit TFBGA63 TFBGA63 M29DW323D M29DW323DB M29DW323DT TFBGA48

    Untitled

    Abstract: No abstract text available
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns


    Original     		PDF M29DW324DT M29DW324DB TSOP48 16Mbit 16Mbit TFBGA63

    EMC2112

    Abstract: M29DW324D M29DW324DB M29DW324DT TFBGA48
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW324DT M29DW324DB 16Mbit 16Mbit EMC2112 M29DW324D M29DW324DB M29DW324DT TFBGA48

    M29DW323DB

    Abstract: M29DW323D M29DW323DT TFBGA48
    Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW323DT M29DW323DB 24Mbit M29DW323DB M29DW323D M29DW323DT TFBGA48

    M45PE80

    Abstract: ST10
    Text: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 8Mbit of Page-Erasable Flash Memory Page Write up to 256 Bytes in 11ms (typical)


    Original     		PDF M45PE80 25MHz 4014h) M45PE80 ST10

    Untitled

    Abstract: No abstract text available
    Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW323DT M29DW323DB TSOP48 24Mbit TFBGA63

    AI06811B

    Abstract: No abstract text available
    Text: M45PE80 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface FEATURES SUMMARY • 8Mbit of Page-Erasable Flash Memory ■ Page Write up to 256 Bytes in 11ms (typical) ■ Page Program (up to 256 Bytes) in 1.2ms


    Original     		PDF M45PE80 25MHz 4014h) AI06811B

    Untitled

    Abstract: No abstract text available
    Text: 3 T H I S DRAWING I S UNPUBLI SHED. C 23 COPYRI GHT 2000 RELEASED FOR P UB L I CA T I O N 2000 LOC BY TYCO ELECTRONI CS CORPORATI ON. ALL RI GHTS RESERVED. REV ISIONS DIST GW P LTR DE SCRI PTI ON A DWN DATE Firs t issue 28JUL2006 AM APVD DB D D View w ith centre conductor mounted


    OCR Scan     		PDF 28JUL2006 02APR2003 08APR2003