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    086-56 UNF Search Results

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    free capacitor

    Abstract: No abstract text available
    Text: A p p lication N ote s C h ip S e le ction P ack ag in g Multilayer capacitors MLC are categorized by dielectric performance with temperature, or “temperature coefficient”, as these devices vary in behavior over temperature. The choice of component is thus largely determined by the temperature stability


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    NASM33537

    Abstract: ms21209 MA1567 NASM21209 nas1130 NASM8846 MA1565 mil-s-8879 MS122076 torque settings chart for metric stainless bolts
    Text: Tangless AND Tanged INSERTS & TOOLS The single best source for helical coil inserts, tools and thread repair kits in the industry. KATO® Fastening Systems Mission Statement: " W e F. A . S . T. E . N . " • FUTURE: At KFS our goal is to assure that our products stay a step ahead of the


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    PDF manuf999 NASM33537 ms21209 MA1567 NASM21209 nas1130 NASM8846 MA1565 mil-s-8879 MS122076 torque settings chart for metric stainless bolts

    .120-80 uns

    Abstract: uns tread SN60-63 94011 32 UNS
    Text: Thin-Trim 9401 Series .140 3.56 MAX. COLOR CODE DOT Click for Handling Instruction ø .150 (3.81) .020± .002 (0.51±.051) .125 (3.18) 60° .025 (.635) SQUARE DRIVE TUNING .004±.001 (.102±.025) .040(1.02) MAX. .195±.010 (4.95±.254) DASH NO. COLOR CODE


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    PDF 100MHz 9401e .120-80 uns uns tread SN60-63 94011 32 UNS

    MIL-H-7199

    Abstract: MIL-R-5847 MIL-C-39012 SMA SPEC CECC+22110/111
    Text: Description SMA is an acronym for SubMinature version A and was developed in the 1960’s. It uses a threaded interface. 50 ohm SMA connectors are semi-precision, subminiature units which provide excellent electrical performance from DC to 18 Ghz. These high performance connectors are compact in size and


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    PDF MIL-C-39012 250-36UNS MIL-H-7199 MIL-R-5847 MIL-C-39012 SMA SPEC CECC+22110/111

    CF 331

    Abstract: MARKING C18 1R4 tube
    Text: Application Notes Chip Selection Packaging Multilayer capacitors MLC are categorized by dielectric performance with temperature, or “temperature coefficient”, as these devices vary in behavior over temperature. The choice of component is thus largely determined by the temperature stability


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    ALT-4975-C

    Abstract: No abstract text available
    Text: Passive & Control Components Equipment and Components for the RF & Microwave Industry Active Components Oscillators www.AtlanTecRF.com Connectors, Cable and Cable Assemblies Noise Generators Satellite Communications Equipment Custom Equipment Sub-Assemblies


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    eSOP-12

    Abstract: TNY264G P08A TNY264 kose eSIP-7C PI-52 forced draft cooling tower eDIP-12 TL183
    Text: Package Information Package Design Specifications, Tape & Reel and Assembly Information Package Design Specifications TO-220-7C Y Package .165 (4.19) .185 (4.70) .390 (9.91) .420 (10.67) .146 (3.71) .156 (3.96) .108 (2.74) REF + .045 (1.14) .055 (1.40) .234 (5.94)


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    PDF O-220-7C eSOP-12 TNY264G P08A TNY264 kose eSIP-7C PI-52 forced draft cooling tower eDIP-12 TL183

    goodyear pliobond

    Abstract: rosan clinch nut mil-s-8879 M45938 rosan nut rosan press nuts MIL-N-25027 MIL-S-7742 Rosan RPN 8-32 SC clinch nut REA-032
    Text: Santa Ana Operations Press-Lock Fasteners FOR USE IN ALUMINUM, BRASS AND COPPER M F P N S C L M AY A L S O B E U S E D I N N O N - H A R D E N E D M I L D S T E E L A P P L I C AT I O N S PA RT NUMB ERS A L L OY STEEL STA INL ESS STEEL THREA D A ND SIZE


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    PDF D-86551 goodyear pliobond rosan clinch nut mil-s-8879 M45938 rosan nut rosan press nuts MIL-N-25027 MIL-S-7742 Rosan RPN 8-32 SC clinch nut REA-032

    panasonic inverter dv 707 manual

    Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
    Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594


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    Untitled

    Abstract: No abstract text available
    Text: 1 SMB 0 9 S E R IE S Subm iniature Connectors SMB connectors are an excellent solution for space-limited applications to 4 GHz and feature a rapid connect/disconnect engagement. This product line features straight and right angle configurations in all popular cable groups as well as in printed circuit


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    VAR11

    Abstract: No abstract text available
    Text: Standard Rigid Coaxial Transmission Line is Available in 1-5/8", 50-ohm Size • Uses PTFE dielectric peg insulators and silver soldered flanges • Fully compatible with EIA standard RS-225 and IEC recommendations. All flanged sections come complete with one inner


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    PDF 50-ohm RS-225 VAR11

    CQ926

    Abstract: kic 125 22AT72-S-E C047
    Text: MICROILLINOIS SWITCH US* A OWIS'ON rip « r« Of C A T A LO G LISTING c o o t »i m * 15/32-32 UNS T H R E A D TO WITHIN .062 OF SHOULO£R BUSHING SEALED INTERNALLYTO PREVENT ENTRANCE OF LIQUID OR DUST Ll I — Ll_ O CO 1 CVJ N* 1— .0 7 2 OJ CvJ CORROSION RESISTANT S T E E L INTERNAL^tOOTH


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    PDF C081168 CQ92636 22AT72-S-E 411SM1-S 75\F0R CQ926 kic 125 22AT72-S-E C047

    AVANTEK transistor

    Abstract: AVANTEK Avantek amplifier Avantek, Inc avantek microwave "TO-72 package" ZO 103 MA 75 533 AVANTEK oscillator
    Text: AVANTEK I NC 20E D 0AVANTEK lm n tt AT-00572 Up to 1 GHz General Purpose Silicon Bipolar Transistor Features • • • • • GQDbM45 7 Avantek TO-72 Package 19.0 dBm typical Pi dB at 1.0 GHz 6.0 dB typical GidB at 1.0 GHz 2.3 dB typical at 1.0 GHz High Galn-Bandwidth Product: 6.5 GHz typical


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    PDF GQDbM45 AT-00572 AVANTEK transistor AVANTEK Avantek amplifier Avantek, Inc avantek microwave "TO-72 package" ZO 103 MA 75 533 AVANTEK oscillator

    Untitled

    Abstract: No abstract text available
    Text: A COMPANY OF M O DEL PH W irew o u n d R esisto rs Precision Power Aluminum Housed, Thru-Chassis Mount FEATURES f • Complete welded construction • Complete environmental protection • Designed to utilize heat-sink effect of chassis _ • Plug-in connections available for quick connect/disconnect from circuit


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    PDF 50PPM 30PPM 20PPM PH-10-1 PH-25

    42N15

    Abstract: 079A 42N20
    Text: I X Y S CORP 10E D I D00D3b4 3 I /_ V -3 Ÿ -/S - □IXYS MegaMOS FETs IXTH42N20, 15 IXTM42N20, 15 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vd Drain-Gate Voltage (Rq s = 1.0MÎ1) (1) Vqqr Gate-Source Voltage Continuous


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    PDF D00D3b4 IXTH42N20, IXTM42N20, IXTH42N15 IXTM42N15 IXTH42N20 IXTM42N20 O-204 O-247 50-200V, 42N15 079A 42N20

    17N55

    Abstract: MOSFET 17N60 17N60 IXTM17N55 IXTH17N60
    Text: IDE I X Y S CORP D I 4t>ôt>22t, 0 0 00 3M b I r - 5 ? - / r MegaMOS'“ FETs n ix Y S IXTH17N60, 55 IXTM17N60, 55 MAXIMUM RATINGS Sym. IXTH17N55 IXTM17N55 IXTH17N60 IXTM17N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rg s = 1-OMfl) (1)


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    PDF IXTH17N55 IXTM17N55 IXTH17N60 IXTM17N60 O-204 O-247 IXTH17N60, IXTM17N60, 17N55 MOSFET 17N60 17N60

    AX 1668 F 24 pin

    Abstract: AX 1668 F IXTH17P25 ixtm17p25
    Text: I Î O E D 1 4bflhS2b GOODatiO 5 | X Y S CORP P-CHANNEL MOSFETS □ IX Y S IXTH17P25 IXTM17P25 ' MAXIMUM RATINGS Parameter Sym. IXTH17P25 IXTM17P25 * Unit Drain-Source Voltage 1 VDss 250 Vdc Drain-Gate Voltage (Rqs = 1.0MÎ1) (1) Vdgr 250 Vdc Vqs ± 20 Vcjc


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    PDF IXTH17P25 IXTM17P25 IXTM17P25 O-247 O-204 AX 1668 F 24 pin AX 1668 F

    19n50

    Abstract: megamos 48 a 1712 mosfet lhi 778 megamos N-channel MOSFET 800v to-247 IXTM19N50 LHi 978 megamos 13 H100
    Text: I X Y S CORP 10E ° 4Liflt.2ab 000035b M 1 I - 3 7 '/ S MegaMOS FETs D IX Y S IXTH19N50, 45 IXTM19N50, 45 M AXIM UM RATINGS Parameter Sym. IXTH19N45 IXTM19N45 IXTH19N50 IXTM19N50 Unit Drain-Source Voltage 1 Vd s s 450 500 Vdc Vdgr 450 500 Vdc Drain-Gate Voltage (Rq s - 1-OMft) (1)


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    PDF IXTH19N45 IXTH19N50 IXTM19N45 IXTM19N50 000035b 19n50 megamos 48 a 1712 mosfet lhi 778 megamos N-channel MOSFET 800v to-247 LHi 978 megamos 13 H100

    75n08

    Abstract: megamos 46 08 09 6 TL 1074 CT Mosfet K 135 To3 p 75n08 k 1120 P-Channel MOSFET 800v f g megamos
    Text: I X Y S IDE CORP D I 4böbS?b D OOG a b b T □IXYS I 't f - l Ç MegaMOS FETs IXTH75N10, 08 IXTM75N10, 08 MAXIMUM RATINGS Sym. IXTH75N08 IXTM75N08 IXTH75N10 IXTM75N10 Unit Drain-Source Voltage 1 Vd s s 80 100 Vdc Drain-Gate Voltage (Rq s = 1-OMfl) (1)


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    PDF IXTH75N08 IXTH75N10 IXTM75N08 IXTM75N10 IXTH75N10, IXTM75N10, 0-100V, O-247 75n08 megamos 46 08 09 6 TL 1074 CT Mosfet K 135 To3 p 75n08 k 1120 P-Channel MOSFET 800v f g megamos

    ID 48 Megamos

    Abstract: 35N25 IXTM35N25 ixtm35n30
    Text: I X Y S CORP IDE D I 4t . fl b25 L. ÜDDOBbO QDOGBtiO b | 4t.flt.S5t DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous


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    PDF IXTH35N25 IXTM35N25 IXTH35N30 IXTM35N30 O-204 O-247 IXTH350 ID 48 Megamos 35N25

    40N25

    Abstract: IXTH40N25 f g megamos SM 226 6V megamos 46 08 09 6 megamos IXTH40N30 1712 mosfet LD 5161
    Text: I X Y S CORP ID E I D 4 L f l b 5 ab DD0 0 3 SÖ fl | □IXYS ' IXTH40N30, 25 IXTM40N30, 25 MAXIMUM RATINGS Parameter Sym. IXTH40N25 IXTM40N25 IXTH40N30 IXTM40N30 Unit Drain-Source Voltage 1 Voss 250 300 Mac Drain-Gate Voltage (Rqs = 1-OMii) (1) Vq 250 300


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    PDF IXTH40N25 IXTH40N30 IXTM40N25 IXTM40N30 40N25 f g megamos SM 226 6V megamos 46 08 09 6 megamos 1712 mosfet LD 5161

    amphenol 743-9272

    Abstract: Amphenol - RF Connectors CATALOG catalog amphenol RF connector 743-9272 bnc amphenol
    Text: Amphenol RF/Microwave connectors RF connector selection guide Introduction. The guidelines provided in this catalog are intended to assist you in rapidly identifying the best connector for your application. With numerous different series and hundreds of


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    mbab

    Abstract: ixth17p25 ixtm17p25
    Text: I ÎOE D 1 4bflhS2b GOODatiO 5 | X Y S CORP □ P-CHANNEL MOSFETS IX Y S IXTH17P25 IXTM17P25 ' M A X IM U M R A T IN G S P a ram eter Sym . IXTH17P25 IXTM17P25 * Unit Drain-Source Voltage 1 V Ds s 250 Vdc Drain-Gate Voltage (R q s = 1.0MÎ1) (1) Vdgr 250


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    PDF IXTH17P25 IXTM17P25 IXTH17P25 IXTM17P25 O-247 O-204 00ESN0TINCLUOE mbab

    LHi 978

    Abstract: IXTH22P15 wabash Mosfet K 135 To3 IXTH22P20 IXTM22P15 IXTM22P20 TO-220 JEDEC XTH22P20 22p20
    Text: I X Y S IDE CORP D 1 / 4 t .f lt .s a t . 5 I _ T ~ - 3 T'-JLg' □ IXYS P-CHANNEL MOSFETS IXTH22P20/ 15 IXTM22P20, 15 M A X IM U M RATING S Parameter Sym. XTH22P20 XTM22P20 IXTH22P15 IXTM22P15 Unit* Drain-Source Voltage 1) Vd s s 200 150 Vdc Drain-Gate Voltage (R q s = 1-OMfl) (1)


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    PDF XTH22P20 XTM22P20 IXTH22P15 IXTM22P15 IXTH22P20/ IXTM22P20, 50-200V, LHi 978 wabash Mosfet K 135 To3 IXTH22P20 IXTM22P20 TO-220 JEDEC 22p20