CBSL150
Abstract: ASI10586
Text: CBSL150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL150 is Designed for 900 MHz Class AB Cellular Base Station Amplifiers. PACKAGE STYLE .400 BAL FLG C .080x45° FEATURES: A B FULL R (4X).060 R • Internal Input/Output Matching • PG = 9.0 dB Typ. at 150 W/ 900 MHz
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CBSL150
CBSL150
080x45°
ASI10586
ASI10586
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VFT300-50
Abstract: ASI10710 25020A
Text: VFT300-50 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: PACKAGE STYLE .400 BAL FLG D The VFT300-50 is a gold metallized N-Channel Enhancement mode MOSFET intended for use in 50 Vdc large signal applications to 175 MHz. A FULL R B .080x45° D D
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VFT300-50
VFT300-50
080x45°
ASI10710
25020A
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300 watt mosfet amplifier
Abstract: ASI10707 VFT300-28 ms1250
Text: VFT300-28 VHF POWER MOSFET Silicon N-Channel Enhancement Mode DESCRIPTION: The VFT300-28 is Designed for Wideband High Power VHF Amplifier Applications operating up to 250 MHz. PACKAGE STYLE .400 BAL FLG D A FEATURES: B .080x45° • PG = 14 dB Typical at 175 MHz
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VFT300-28
VFT300-28
080x45°
300 watt mosfet amplifier
ASI10707
ms1250
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ACDN301
Abstract: transistor 1345 1345 NPN DSA004098
Text: ACDN301 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ACDN301 is Designed for Television Band IV & V Applications up to 860 MHz. PACKAGE STYLE .400 BAL FLG C .080x45° A B FULL R FEATURES: (4X).060 R E • Common Emitter • PG = 8.5 dB at 100 W/860 MHz
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ACDN301
ACDN301
080x45°
transistor 1345
1345 NPN
DSA004098
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cbsl100
Abstract: ASI10585 018j TRANSISTOR 1335
Text: CBSL100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL100 is Designed for Class AB, Cellular Base Station Applications up to 960 MHz. PACKAGE STYLE .400 BAL FLG C .080x45° A B FULL R FEATURES: (4X).060 R E • Internal Input/Output Matching Network
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CBSL100
CBSL100
080x45°
ASI10585
ASI10585
018j
TRANSISTOR 1335
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TPV6030
Abstract: No abstract text available
Text: TPV6030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV6030 is Designed for Television Band IV & V Applications up to 860 MHz. PACKAGE STYLE .400 BAL FLG C .080x45° A B FULL R FEATURES: (4X).060 R E • Common Emitter • PG = 9.5 dB at 35 W/860 MHz
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TPV6030
TPV6030
080x45°
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TVU150
Abstract: 20AWG ASI10652 39NF
Text: TVU150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU150 is Designed for Television Band IV & V Applications up to 860 MHz. PACKAGE STYLE .400 BAL FLG D FEATURES: .080x45° A FULL R B (4X).060 R • Common Emitter • PG = 10 dB at 150 W/860 MHz
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TVU150
TVU150
080x45°
750pF
20AWG,
20AWG
ASI10652
39NF
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cbsl100
Abstract: ASI10585
Text: CBSL100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL100 is Designed for PACKAGE STYLE .400 BAL FLG C .080x45° A B FULL R FEATURES: (4X).060 R E • Input Matching Network • • Omnigold Metalization System M D C .1925 F H G N I L MAXIMUM RATINGS
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CBSL100
CBSL100
080x45°
ASI10585
ASI10585
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ASI10586
Abstract: CBSL150
Text: CBSL150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL150 is Designed for 900 MHz Class AB Cellular Base Station Amplifiers. PACKAGE STYLE .400 BAL FLG C FEATURES: .080x45° A B FULL R (4X).060 R • Internal Input/Output Matching • PG = 9.0 dB Typ. at 150 W/ 900 MHz
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CBSL150
CBSL150
080x45°
ASI10586
ASI10586
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AM/FM
Abstract: all mosfet vhf power amplifier 300w amplifier ASI10710 VFT300-50
Text: VFT300-50 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: PACKAGE STYLE .400 BAL FLG D The VFT300-50 is Designed for AM/FM Power Amplifier Applications up to 250 MHz. A .080x45° FULL R B D D E D FEATURES: M C G • PG = 15 dB Typ. at 300W/ 175 MHz
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VFT300-50
VFT300-50
080x45°
AM/FM
all mosfet vhf power amplifier
300w amplifier
ASI10710
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BLV859
Abstract: No abstract text available
Text: BLV859 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV859 is Designed for Television Band IV & V Applications up to 860 MHz. PACKAGE STYLE .400 BAL FLG C .080x45° A B FULL R FEATURES: (4X).060 R E • Common Emitter • PG = 10 dB at 150 W/860 MHz
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BLV859
BLV859
080x45°
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VFT300-28
Abstract: ASI10707
Text: VFT300-28 VHF POWER MOSFET Silicon N-Channel Enhancement Mode DESCRIPTION: The VFT300-28 is Designed for Wideband High Power VHF Amplifier Applications operating up to 250 MHz. PACKAGE STYLE .400 BAL FLG D A FULL R B .080x45° FEATURES: (4X).060 R • PG = 14 dB Typical at 175 MHz
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VFT300-28
VFT300-28
080x45°
ASI10707
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ASI10652
Abstract: TVU150
Text: TVU150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG C The ASI TVU150 is Designed for .080x45° A B FULL R (4X).060 R FEATURES: E M D C • Input Matching Network • • Omnigold Metalization System .1925 F H G N I L J MAXIMUM RATINGS
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TVU150
TVU150
080x45°
ASI10652
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ASI10652
Abstract: TVU150
Text: TVU150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU150 is Designed for Television Band IV & V Applications up to 860 MHz. PACKAGE STYLE .400 BAL FLG C .080x45° A B FULL R FEATURES: (4X).060 R E • Common Emitter • PG = 10 dB at 150 W/860 MHz
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TVU150
TVU150
080x45°
ASI10652
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MRF377
Abstract: No abstract text available
Text: MRF377 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF377 is Designed for broadband commercial and industrial applications in 470 to 860 MHz band. Ideal for large-signal, common source amplifier in 32 V digital television transmitter equipment. PACKAGE STYLE .400 BAL FLG. C
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MRF377
MRF377
080x45°
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Untitled
Abstract: No abstract text available
Text: K II I I I L j t f M N STYLE 1: COMMON BASE PIN1 = COLLECTOR 2 = BASE 3 = EMITTER DIM MILLIMETER A 2 2.86 B 9.78 TOL INCHES TOL .13 .13 .900 .385 .005 .005 C D E F G 20.32 2 .0 3 x4 5 ' 3.30 5.72 1.53R .13 5' .13 .25 .13 .800 .080x45° .130 .225 .060R .020
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03x45Â
080x45Â
55MYER
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON S i. M iM TSD2922 iy RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to
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TSD2922
TSD2922
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