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    07MAR2008 Search Results

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    Untitled

    Abstract: No abstract text available
    Text: STGB30NC60K STGP30NC60K 30 A - 600 V - short circuit rugged IGBT Features • Low on-voltage drop VCE(sat ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ) s ( ct du 3 Applications 1 ■ High frequency inverters


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    PDF STGB30NC60K STGP30NC60K O-220 STGB30NC60KT4ot

    TRIAC BTB 16 600 BW

    Abstract: triac bta06 Z0405 equivalent TRIAC BTA 16 600b Z0409 equivalent OPTO TRIAC TRIAC BTB 12.600 data sheet Triacs equivalent TRIAC inductive reference book on triacs
    Text: AN439 Application note Snubberless and logic level TRIAC behavior at turn-off Introduction The use of TRIACs is limited by their switching behavior. Indeed, there is a risk of spurious triggering after conduction if the slope of the decreasing current is too high, and/or if the


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    PDF AN439 TRIAC BTB 16 600 BW triac bta06 Z0405 equivalent TRIAC BTA 16 600b Z0409 equivalent OPTO TRIAC TRIAC BTB 12.600 data sheet Triacs equivalent TRIAC inductive reference book on triacs

    GD18N40LZ

    Abstract: GB18N40LZ GB18N40 GD18N GD18N40 STGB18N40LZ STGB18N40LZ-1 STGB18N40LZT4 STGD18N40LZ STGD18N40LZ-1
    Text: STGB18N40LZ STGD18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT Features • AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive


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    PDF STGB18N40LZ STGD18N40LZ GD18N40LZ GB18N40LZ GB18N40 GD18N GD18N40 STGB18N40LZ STGB18N40LZ-1 STGB18N40LZT4 STGD18N40LZ STGD18N40LZ-1

    vogt transformer s3

    Abstract: l6562 flyback led design bz84c l6562 flyback design L6562 TL431 dali master schematic l6561 flyback pfc led schematic diagram ac-dc inverter l6562 isolated flyback l6562
    Text: AN2708 Application note 2X36 W digital dimmable ballast with L6574 and ST7FDALI Introduction This document describes a high-efficiency, high power factor, low THD and digital dimming electronic ballast designed to drive 2X36 W T8 tube lamps. The system consists of three main blocks:


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    PDF AN2708 L6574 L6562 L6574. vogt transformer s3 l6562 flyback led design bz84c l6562 flyback design L6562 TL431 dali master schematic l6561 flyback pfc led schematic diagram ac-dc inverter l6562 isolated flyback

    Untitled

    Abstract: No abstract text available
    Text: ST72361xx-Auto 8-bit MCU for automotive with Flash or ROM, 10-bit ADC, 5 timers, SPI, LINSCI Features • ■ ■ Memories – 16 K to 60 K High Density Flash HDFlash or ROM with read-out protection capability. In-application programming and in-circuit


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    PDF ST72361xx-Auto 10-bit LQFP32 LQFP44 10x10mm LQFP64

    TIP35C

    Abstract: TIP36C to-247 TIP36C st marking code TIP36C morocco tip35c equivalent TIP35C equivalents TO-218 Package Transistor 150 A pnp JESD97
    Text: TIP35C TIP36C Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose 3 2 1 Description The devices are manufactured in epitaxial-base planar technology and are suitable for power


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    PDF TIP35C TIP36C O-247 TIP35C TIP36C to-247 TIP36C st marking code TIP36C morocco tip35c equivalent TIP35C equivalents TO-218 Package Transistor 150 A pnp JESD97

    GP30NC60K

    Abstract: JESD97 STGB30NC60K STGB30NC60KT4 STGP30NC60K
    Text: STGB30NC60K STGP30NC60K 30 A - 600 V - short circuit rugged IGBT Features • Low on-voltage drop VCE(sat ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ■ High frequency inverters ■ Motor drivers


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    PDF STGB30NC60K STGP30NC60K O-220 STGB30NC60KT4 GB30NC60K GP30NC60K GP30NC60K JESD97 STGB30NC60K STGB30NC60KT4 STGP30NC60K

    JESD97

    Abstract: ST1S03 ST1S03PU ST1S03PUR
    Text: ST1S03 1.5 A, 1.5 MHz adjustable, step-down switching regulator Features • Step-down current mode PWM 1.5 MHz DC-DC converter ■ 2 % DC output voltage tolerance ■ Internal soft start for START-UP current limitation and power on delay of 50-100 µs ■


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    PDF ST1S03 ST1S03 JESD97 ST1S03PU ST1S03PUR

    GB18N40LZ

    Abstract: GD18N40LZ GD18N GB18N40 GD18N40 gb18n40l STGD18N40LZ-1 STGD18N40LZT4 STGB18N40LZ STGB18N40LZT4
    Text: STGB18N40LZ STGD18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT Features • AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive


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    PDF STGB18N40LZ STGD18N40LZ GB18N40LZ GD18N40LZ GD18N GB18N40 GD18N40 gb18n40l STGD18N40LZ-1 STGD18N40LZT4 STGB18N40LZ STGB18N40LZT4

    vfqfpn-32

    Abstract: VFQFPN32 L6733 L6733TR
    Text: L6733 Advanced modular synchronous PWM controller Data Brief Features • High current embedded drivers with programmable supply voltage ■ Operative supply voltage range: 4.5 V to 16 V with selectable UVLO threshold ■ Adjustable output voltage: 0.6 V reference


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    PDF L6733 vfqfpn-32 VFQFPN32 L6733 L6733TR

    TIP36C morocco

    Abstract: TIP36C TIP35C equivalents TIP35C tip35c equivalent JESD97 TIP36C to-247
    Text: TIP35C TIP36C Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio amplifier 3 2 1 TO-247 Description The devices are manufactured in planar


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    PDF TIP35C TIP36C O-247 TIP35C TIP36C morocco TIP36C TIP35C equivalents tip35c equivalent JESD97 TIP36C to-247

    GW30NC60KD

    Abstract: STGW30NC60KD p21xc JESD97
    Text: STGW30NC60KD 30 A - 600 V - short circuit rugged IGBT Features • Low on-voltage drop VCE(sat ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with ultra fast free-wheeling diode


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    PDF STGW30NC60KD O-247 GW30NC60KD GW30NC60KD STGW30NC60KD p21xc JESD97

    GB18N40LZ

    Abstract: GD18N40LZ automotive pencil ignition coil STGP18N40LZ GP18N40LZ STGD18N40LZ STGB18N40LZ stgp18n40 STGB18N40LZ-1 STGB18N40LZT4
    Text: STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features • AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive


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    PDF STGB18N40LZ STGD18N40LZ, STGP18N40LZ O-220 GB18N40LZ GD18N40LZ automotive pencil ignition coil STGP18N40LZ GP18N40LZ STGD18N40LZ STGB18N40LZ stgp18n40 STGB18N40LZ-1 STGB18N40LZT4

    tip35cw

    Abstract: No abstract text available
    Text: TIP35CW TIP36CW Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio amplifier 3 2 1 TO-247 Description The devices are manufactured in planar


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    PDF TIP35CW TIP36CW O-247 TIP35CW

    INVERTER 10kW

    Abstract: LQFP32 LQFP44 LQFP64 ST72361 ST7261
    Text: ST72361xx-Auto 8-bit MCU for automotive with Flash or ROM, 10-bit ADC, 5 timers, SPI, LINSCI Features • ■ ■ Memories – 16 K to 60 K High Density Flash HDFlash or ROM with read-out protection capability. In-application programming and in-circuit


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    PDF ST72361xx-Auto 10-bit LQFP32 LQFP44 10x10mm LQFP64 INVERTER 10kW ST72361 ST7261

    Untitled

    Abstract: No abstract text available
    Text: M95160-W4 M95160-W3 16 Kbit serial SPI bus EEPROM with high speed clock Custom data Features • Compatible with SPI bus serial interface positive clock SPI modes ■ Extended operating temperature range: – Device grade 3: –40 °C to +125 °C – Device grade 4: –40 °C to +145 °C


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    PDF M95160-W4 M95160-W3 40-year

    W435

    Abstract: atx 220 corrugated box spec
    Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - LOC ALL RIGHTS RESERVED. R E V IS IO N S DW LTR B DESCRIPTION REVISED E C R - 0 8 - 0 1 1573 DATE DWN APVD 07MAY08 SC WK D D 13.2 NOTES: 1. MATERIAL: 1.1 HOUSING: THERMOPLASTIC(PBT), U L94V-0;


    OCR Scan
    PDF ECR-08-011573) 07MAY08 UL94V-0; UL94V-0, 500PCS) 1000PCS) 31MAR2000 W435 atx 220 corrugated box spec