CAN43111
Abstract: ANCV spbt2532c2.at 0307-ARAJ00079 SPBT2532C2 bluetooth SPBT2532C2 SPBT2532 2450T18A100S B016360 YAGEO
Text: SPBT2532C2.AT Bluetooth technology class-2 module Features • Bluetooth® specification compliant V2.1 ■ Output power class-2 ■ Transmission rate up to 2 Mbps with EDR ■ Packet types supported: – ACL: DM1, DM3, DM5, DH1, DH3, DH5, 2DH1, 2-DH3, 2-DH5
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SPBT2532C2
CAN43111
ANCV
spbt2532c2.at
0307-ARAJ00079
bluetooth SPBT2532C2
SPBT2532
2450T18A100S
B016360
YAGEO
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02APR
Abstract: No abstract text available
Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:
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M48Z35
M48Z35Y
M48Z35:
M48Z35Y:
28-lead
02APR
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M48T35
Abstract: STMicroelectronics
Text: M48T35 M48T35Y 5 V, 256 Kbit 32 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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M48T35
M48T35Y
M48T35:
M48T35Y:
STMicroelectronics
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Untitled
Abstract: No abstract text available
Text: M48Z08 M48Z18 5 V, 64 Kbit 8 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection
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M48Z08
M48Z18
M48Z08:
M48Z18:
PCDIP28
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Untitled
Abstract: No abstract text available
Text: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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M48T08
M48T08Y,
M48T18
M48T08:
M48T18/T08Y:
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ST M48T02
Abstract: No abstract text available
Text: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated, ultra low power SRAM, real-time clock, and power-fail control circuit BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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M48T02
M48T12
M48T02:
M48T12:
PCDIP24
ST M48T02
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Untitled
Abstract: No abstract text available
Text: M48T58 M48T58Y 5.0 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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M48T58
M48T58Y
M48T58:
M48T58Y:
PCDIP28
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Untitled
Abstract: No abstract text available
Text: M48Z08 M48Z18 5 V, 64 Kbit 8 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection
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M48Z08
M48Z18
M48Z08:
M48Z18:
PCDIP28
M48Z08,
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STANDARD DIN 6784
Abstract: No abstract text available
Text: M48Z35AV 5.0 V or 3.3 V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■
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M48Z35AV
M48Z35AV:
28-lead
STANDARD DIN 6784
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Untitled
Abstract: No abstract text available
Text: M48Z02 M48Z12 5 V, 16 Kbit 2 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection
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M48Z02
M48Z12
M48Z02:
M48Z12:
PCDIP24
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M48T58
Abstract: STMicroelectronics
Text: M48T58 M48T58Y 5.0 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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M48T58
M48T58Y
M48T58:
M48T58Y:
28-lead
STMicroelectronics
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Field Oriented Control BLDC
Abstract: L6230 VFQFPN-32 footprint VFQFPN32 L6230PDTR vfqfpn-32 VFQFPN thermal resistance
Text: L6230 DMOS driver for three-phase brushless DC motor Features • Operating supply voltage from 8 to 52 V ■ 2.8 A output peak current 1.4 A RMS ■ RDS(on) 0.73 Ω typ. value @ TJ = 25 °C ■ Integrated fast free wheeling diodes ■ Operating frequency up to 100 kHz
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L6230
VFQFPN32
PowerSO36
L6230
Field Oriented Control BLDC
VFQFPN-32 footprint
L6230PDTR
vfqfpn-32
VFQFPN thermal resistance
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M48T08
Abstract: STMicroelectronics K 2411 equivalent
Text: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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M48T08
M48T08Y,
M48T18
M48T08:
M48T18/T08Y:
28-lead
STMicroelectronics
K 2411 equivalent
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SJ78M05
Abstract: No abstract text available
Text: SJ78M05 3-Terminal Positive Voltage Regulator Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TO-252 The SJ78M05 series of three-terminal positive regulators are available in the TO-252 package and with 5Vfixed output
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SJ78M05
O-252
SJ78M05
O-252
100KHz
120Hz,
300mA.
350mA
07-Jun-2011
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Untitled
Abstract: No abstract text available
Text: L6230 DMOS driver for three-phase brushless DC motor Features • Operating supply voltage from 8 to 52 V ■ 2.8 A output peak current 1.4 A RMS ■ RDS(on) 0.73 Ω typ. value @ TJ = 25 °C ■ Integrated fast free wheeling diodes ■ Operating frequency up to 100 kHz
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L6230
L6230
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Untitled
Abstract: No abstract text available
Text: M48Z02 M48Z12 5 V, 16 Kbit 2 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection
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M48Z02
M48Z12
M48Z02:
M48Z12:
PCDIP24
M48Z02,
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Untitled
Abstract: No abstract text available
Text: M48T35 M48T35Y 5 V, 256 Kbit 32 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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M48T35
M48T35Y
M48T35:
M48T35Y:
PCDIP28
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Untitled
Abstract: No abstract text available
Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ ■ WRITE protect voltages:
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M48Z35
M48Z35Y
M48Z35:
M48Z35Y:
PCDIP28
28-lead
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Untitled
Abstract: No abstract text available
Text: SPBT2532C2.AT Bluetooth technology class-2 module Features • Bluetooth® specification compliant V2.1 ■ Output power class-2 ■ Transmission rate up to 2 Mbps with EDR ■ Packet types supported: – ACL: DM1, DM3, DM5, DH1, DH3, DH5, 2DH1, 2-DH3, 2-DH5
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SPBT2532C2
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P LTR A 1 POSITION DA1 POSITION GA1 PA1-3 3.00 5.50 C POSITION GE7 5 B DIM H 51.85 0.25 46.45 0.20 DATE REVISED PER ECO-14-005178 DWN
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ECO-14-005178
03JUN2011
07JUN2011
24/83/6P,
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STM32L
Abstract: trace code st STM32L152VB STM32L151 st trace code STM32L15
Text: STM32L152-SK/IAR IAR starter kit for STM32L EnergyLite 32-bit microcontrollers Data brief Features • The IAR Embedded WorkBench for ARM EWARM software package with: – KickStart™ C/C+ compiler for output of code up to 32 Kbytes – VisualSTATE® code generator, 20-state
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STM32L152-SK/IAR
STM32L
32-bit
20-state
20-pin
trace code st
STM32L152VB
STM32L151
st trace code
STM32L15
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M48T02
Abstract: STMicroelectronics
Text: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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M48T02
M48T12
M48T02:
M48T12:
STMicroelectronics
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Untitled
Abstract: No abstract text available
Text: M48Z58 M48Z58Y 5 V, 64 Kbit 8 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:
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M48Z58
M48Z58Y
M48Z58:
M48Z58Y:
28-lead
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Untitled
Abstract: No abstract text available
Text: M48Z35AV 5.0 V or 3.3 V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■
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M48Z35AV
M48Z35AV:
28-lead
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