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    07 MARKING CODE MOSFET Search Results

    07 MARKING CODE MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    07 MARKING CODE MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FastIRFET IRFH4210PbF HEXFET Power MOSFET VDSS 25 RDS on max (@ VGS = 10V) (@ VGS = 4.5V) V 1.10 m 1.35 Qg (typical)  nC ID (@TC (Bottom) = 25°C) 245 A PQFN 5X6 mm Applications  Synchronous Rectifier MOSFET for Synchronous Buck Converters


    Original     		PDF IRFH4210PbF com/technical-info/appnotes/an-994

    Untitled

    Abstract: No abstract text available
    Text: FastIRFET IRFH4213PbF HEXFET Power MOSFET VDSS 25 RDS on max (@ VGS = 10V) (@ VGS = 4.5V) V 1.35 m 1.90 Qg (typical) 26 nC ID (@TC (Bottom) = 25°C) 204 A PQFN 5X6 mm Applications  Synchronous Rectifier MOSFET for Synchronous Buck Converters


    Original     		PDF IRFH4213PbF com/technical-info/appnotes/an-994

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS N-Channel SMD MOSFET 2N7002 List List. 1 Package outline. 2 Features. 2


    Original     		PDF 2N7002 500hrs. MIL-STD-750D METHOD-1056 1000hrs. METHOD-1038 METHOD-1031 JESD22-A102

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS ESD N-Channel SMD MOSFET 2N7002K List List. 1 Package outline. 2 Features. 2


    Original     		PDF 2N7002K METHOD-1027 500hrs. MIL-STD-750D METHOD-1051 METHOD-1056 1000hrs. METHOD-1038

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS N-Channel Small Signal MOSFET FMSBSS138 List List. 1 Package outline. 2


    Original     		PDF FMSBSS138 120sec 260sec 30sec DS-231147

    SPN2304

    Abstract: MOSFET SPN2304S23RG
    Text: SPN2304 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2304 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPN2304 SPN2304 MOSFET SPN2304S23RG

    SPN2342

    Abstract: MOSFET SPN2342S23RGB SPN2342S23RG
    Text: SPN2342 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2342 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPN2342 SPN2342 MOSFET SPN2342S23RGB SPN2342S23RG

    SPN2318S23RGB

    Abstract: SPN2318 5V 2A MOSFET N-channel 2A-13 Vgs 40V mosfet
    Text: SPN2318 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPN2318 SPN2318 SPN2318S23RGB 5V 2A MOSFET N-channel 2A-13 Vgs 40V mosfet

    07 MARKING CODE MOSFET

    Abstract: SPN3400 SPN3400S23RG
    Text: SPN3400 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3400 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPN3400 SPN3400 07 MARKING CODE MOSFET SPN3400S23RG

    SPN2302A

    Abstract: MOSFET SPN2302AS23RGB SPN2302AS23RG
    Text: SPN2302A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPN2302A SPN2302A MOSFET SPN2302AS23RGB SPN2302AS23RG

    MOSFET

    Abstract: SPP2319 P-Channel mosfet 40V
    Text: SPP2319 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2319 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPP2319 SPP2319 -40V/-3 MOSFET P-Channel mosfet 40V

    SPN2302DS23RG

    Abstract: marking 6A SOT 23 sot-23 MOSFET Marking code 6A mosfet vgs 5v SOT23 marking 31A sot-23
    Text: SPN2302D N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		PDF SPN2302D SPN2302D SPN2302DS23RG marking 6A SOT 23 sot-23 MOSFET Marking code 6A mosfet vgs 5v SOT23 marking 31A sot-23

    SPN3414

    Abstract: MOSFET SPN3414S23RG SPN3414S23RGB
    Text: SPN3414 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3414 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPN3414 SPN3414 MOSFET SPN3414S23RG SPN3414S23RGB

    SPN2302DS23RG

    Abstract: No abstract text available
    Text: SPN2302D N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		PDF SPN2302D SPN2302D SPN2302DS23RG

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD MOSFET FMS2305A List List. 1 Package outline. 2 Features. 2


    Original     		PDF FMS2305A 500hrs. MIL-STD-750D METHOD-1056 1000hrs. METHOD-1038 METHOD-1031 JESD22-A102

    Untitled

    Abstract: No abstract text available
    Text: N-Channel SMD MOSFET Formosa MS FMSBSS138 List List. 1 Package outline. 2 Features. 2


    Original     		PDF FMSBSS138 120sec 260sec 30sec DS-231147

    Small Signal MOSFET

    Abstract: FMSBSS138 BSS138-H
    Text: N-Channel Small Signal MOSFET Formosa MS FMSBSS138 List List. 1 Package outline. 2


    Original     		PDF FMSBSS138 120sec 260sec 30sec DS-231147 Small Signal MOSFET FMSBSS138 BSS138-H

    FMS2303

    Abstract: POWER MOSFET P1 smd marking code FMS2303-H
    Text: SMD MOSFET Formosa MS FMS2303 List List. 1 Package outline. 2 Features. 2


    Original     		PDF FMS2303 120sec 260sec 30sec DS-231135 FMS2303 POWER MOSFET P1 smd marking code FMS2303-H

    SOT-23

    Abstract: MOSFET 2301 SOT-23 SMD WAG FMS2301 MOSFET 2301 POWER MOSFET P1 smd marking code 2301 marking sot-23
    Text: SMD MOSFET Formosa MS FMS2301 List List. 1 Package outline. 2 Features. 2


    Original     		PDF FMS2301 120sec 260sec 30sec DS-231129 SOT-23 MOSFET 2301 SOT-23 SMD WAG FMS2301 MOSFET 2301 POWER MOSFET P1 smd marking code 2301 marking sot-23

    Untitled

    Abstract: No abstract text available
    Text: IRF7748L1TRPbF IRF7748L1TR1PbF DirectFET N-Channel Power MOSFET  Applications RoHS Compliant, Halogen Free  Lead-Free Qualified up to 260°C Reflow Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification


    Original     		PDF IRF7748L1TRPbF IRF7748L1TR1PbF 146nC IRF7748L1TR/TR1PbF J-STD-020D)

    Untitled

    Abstract: No abstract text available
    Text: IRF7739L1TRPbF IRF7739L1TRPbF DirectFET™ Power MOSFET ‚ Applications l RoHS Compliant, Halogen Free  l Lead-Free Qualified up to 260°C Reflow l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification


    Original     		PDF IRF7739L1TRPbF IRF7739L1TRPbF 220nC IRF7739Lty

    waag

    Abstract: No abstract text available
    Text: SMD MOSFET Formosa MS FMS2301A List List. 1 Package outline. 2 Features. 2


    Original     		PDF FMS2301A 120sec 260sec 30sec DS-231172 waag

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD MOSFET FMSBSS123 List List. 1 Package outline. 2 Features. 2


    Original     		PDF FMSBSS123 120sec 260sec 30sec DS-231146

    SOT-23

    Abstract: No abstract text available
    Text: Formosa MS N-Channel Power MOSFET FMSBSS123 List List. 1 Package outline. 2 Features. 2


    Original     		PDF FMSBSS123 120sec 260sec 30sec DS-231146 SOT-23