Untitled
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Top View LEDs 67-21/B3C-BN1Q2N/2T Features ˙P-LCC-2 package. ˙White package. ˙Optical indicator. ˙Colorless clear window. ˙Wide viewing angle. ˙Suitable for vapor-phase reflow, Infrared reflow and wave solder processes.
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67-21/B3C-BN1Q2N/2T
DSE-671-606
06-Nov-2007
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w55nm60n
Abstract: STW55NM60N w55nm60
Text: STW55NM60N N-channel 600 V - 0.047 Ω - 51 A - TO-247 second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) max ID STW55NM60N 650 V < 0.060 Ω 51 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance
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STW55NM60N
O-247
O-247
W55Nerein
w55nm60n
STW55NM60N
w55nm60
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Untitled
Abstract: No abstract text available
Text: M41T56 Serial real-time clock RTC with 56 bytes NVRAM Features • Counters for seconds, minutes, hours, day, date, month, years, and century ■ 32 KHz crystal oscillator integrating load capacitance (12.5 pF) providing exceptional oscillator stability and high crystal series
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M41T56
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STP4N150
Abstract: 4N150 STFW4N150 STW4N150 W4N150
Text: STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 Ω, 4 A, PowerMESH Power MOSFET TO-220, TO-247, TO-3PF Features Type VDSS RDS on max ID 1500 V <7Ω 4A STP4N150 1500 V <7Ω 4A STW4N150 1500 V <7Ω 4A STFW4N150 (1) 3 1 2 2 TO-220 TO-247 1. All data which refers solely to the TO-3PF package is
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STFW4N150
STP4N150,
STW4N150
O-220,
O-247,
STP4N150
O-220
O-247
STP4N150
4N150
STFW4N150
STW4N150
W4N150
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F30NM60ND
Abstract: 30NM60ND F30NM60ND-STW30NM60ND f30nm60 STB30NM60ND-STI30NM60ND STP30NM60ND STW30NM60ND STP30 30NM60N STF30NM60ND
Text: STP/F30NM60ND-STW30NM60ND STB30NM60ND-STI30NM60ND N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET with fast diode Preliminary Data Features Type VDSS RDS(on) Max ID STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND
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STP/F30NM60ND-STW30NM60ND
STB30NM60ND-STI30NM60ND
O-220/FP/D2PAK/I2PAK/TO-247
STB30NM60ND
STI30NM60ND
STF30NM60ND
STP30NM60ND
STW30NM60ND
O-220
O-220FP
F30NM60ND
30NM60ND
F30NM60ND-STW30NM60ND
f30nm60
STB30NM60ND-STI30NM60ND
STP30NM60ND
STW30NM60ND
STP30
30NM60N
STF30NM60ND
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SM340A
Abstract: SM3100A SM350A SM320A
Text: SM320A THRU SM3100A VOLTAGE 20V ~ 100V Elektronische Bauelemente 3.0 AMP Surface Mount Schottky Barrier Rectifiers RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SMA FEATURES . RoHS Compliant Product . Ideal for surface mount applications
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SM320A
SM3100A
06-Nov-2007
SM340A
SM3100A
SM350A
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4n150
Abstract: P4N150 STP4N150 STW4N150 W4N150 jedec package TO-220 JESD97 STFV4N150 STFW4N150
Text: STFV4N150 - STFW4N150 STP4N150 - STW4N150 N-channel 1500 V - 5 Ω - 4 A - PowerMESH Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF Features Type VDSS RDS on max ID STFV4N150 STFW4N150 (1) STP4N150 STW4N150 1500 V 1500 V 1500 V 1500 V <7Ω <7Ω <7Ω
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STFV4N150
STFW4N150
STP4N150
STW4N150
O-220
O-220FH
O-247
STFV4N150
STP4N150
4n150
P4N150
STW4N150
W4N150
jedec package TO-220
JESD97
STFW4N150
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M48Z58
Abstract: M48Z58Y SOH28
Text: M48Z58 M48Z58Y 5V, 64Kbit 8Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28 1
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M48Z58
M48Z58Y
64Kbit
M48Z58:
M48Z58Y:
28-lead
M48Z58
M48Z58Y
SOH28
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DX48BT2
Abstract: DX48BT
Text: Work Play Support About Intel Products Change Location Technology Communities Downloads Reseller Support Home Intel Desktop Board DX48BT2 home Warranty information Spare parts Desktop Board support information Intel® Desktop Board DX48BT2 What's in the box
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DX48BT2
DX48BT2
DX48BT2.
BOXDX48BT2
BLKDX48BT2
S-028491
06-Nov-2007
DX48BT
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Untitled
Abstract: No abstract text available
Text: M41T56 Serial real-time clock with 56 bytes NVRAM Features • Counters for seconds, minutes, hours, day, date, month, years, and century ■ 32KHz crystal oscillator integrating load capacitance 12.5pF providing exceptional oscillator stability and high crystal series
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M41T56
32KHz
400kHz
450nA
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STP4N150
Abstract: W4N150 4N150 STFW4N150 STW4N150
Text: STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 Ω, 4 A, PowerMESH Power MOSFET in TO-220, TO-247, TO-3PF Features Type VDSS RDS on max ID Pw STFW4N150 1500 V <7Ω 4A 63 W STP4N150 1500 V <7Ω 4A 160 W STW4N150 1500 V <7Ω 4A 160 W 2 2 3 1 TO-220
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STFW4N150
STP4N150,
STW4N150
O-220,
O-247,
STP4N150
O-220
O-247
STP4N150
W4N150
4N150
STFW4N150
STW4N150
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STP4N150
Abstract: P4N150 creepage W4N150
Text: STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 Ω, 4 A, PowerMESH Power MOSFET TO-220, TO-247, TO-3PF Features Type VDSS RDS on max ID 1500 V <7Ω 4A STP4N150 1500 V <7Ω 4A STW4N150 1500 V <7Ω 4A STFW4N150 (1) 3 1 2 2 TO-220 TO-247 1. All data which refers solely to the TO-3PF package is
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STFW4N150
STP4N150,
STW4N150
O-220,
O-247,
STP4N150
O-220
O-247
P4N150
creepage
W4N150
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STP4N150
Abstract: No abstract text available
Text: STP4N150 STW4N150 N-channel 1500V - 5Ω - 4A - TO-220/TO-247 very high PowerMESH Power MOSFET Features VDSS RDS on Max (@Tjmax) Type ID STP4N150 1500 V <7Ω 4A STW4N150 1500 V <7Ω 4A • Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances
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STP4N150
STW4N150
O-220/TO-247
O-220
O-247
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Untitled
Abstract: No abstract text available
Text: M48Z58 M48Z58Y 5 V, 64 Kbit 8 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:
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M48Z58
M48Z58Y
M48Z58:
M48Z58Y:
PCDIP28
28-lead
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Untitled
Abstract: No abstract text available
Text: STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 Ω, 4 A, PowerMESH Power MOSFET in TO-220, TO-247, TO-3PF Features Type VDSS RDS on max ID Pw STFW4N150 1500 V <7Ω 4A 63 W STP4N150 1500 V <7Ω 4A 160 W STW4N150 1500 V <7Ω 4A 160 W 2 3 1 TO-220 2
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STFW4N150
STP4N150,
STW4N150
O-220,
O-247,
STP4N150
O-220
O-247
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STW55NM60N
Abstract: JESD97
Text: STW55NM60N N-channel 600 V, 0.047 Ω, 51 A, MDmesh II Power MOSFET TO-247 Features Type VDSS @Tjmax RDS(on) max ID STW55NM60N 650 V < 0.060 Ω 51 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 2 3
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STW55NM60N
O-247
STW55NM60N
JESD97
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M41T56
Abstract: STMicroelectronics
Text: M41T56 Serial real-time clock RTC with 56 bytes NVRAM Features • Counters for seconds, minutes, hours, day, date, month, years, and century ■ 32 KHz crystal oscillator integrating load capacitance (12.5 pF) providing exceptional oscillator stability and high crystal series
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M41T56
150-mil,
M41T56
STMicroelectronics
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Untitled
Abstract: No abstract text available
Text: M48Z58 M48Z58Y 5 V, 64 Kbit 8 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:
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M48Z58
M48Z58Y
M48Z58:
M48Z58Y:
28-lead
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Untitled
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Top View LEDs 67-21/B3C-BN1Q2N/2T Features ․P-LCC-2 package. ․White package. ․Optical indicator. ․Colorless clear window. ․Wide viewing angle. ․Suitable for vapor-phase reflow, Infrared reflow
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Original
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67-21/B3C-BN1Q2N/2T
DSE-671-606
06-Nov-2007
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M48Z58
Abstract: M48Z58Y SOH28 PM-DIP28
Text: M48Z58 M48Z58Y 5 V, 64 Kbit 8 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:
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M48Z58
M48Z58Y
M48Z58:
M48Z58Y:
PCDIP28
28-lead
M48Z58
M48Z58Y
SOH28
PM-DIP28
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STMicroelectronics 8-pin SOIC power
Abstract: crystal 32kHZ M41T56
Text: M41T56 Serial real-time clock with 56 bytes NVRAM Features • Counters for seconds, minutes, hours, day, date, month, years, and century ■ 32KHz crystal oscillator integrating load capacitance 12.5pF providing exceptional oscillator stability and high crystal series
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M41T56
32KHz
100kHz
450nA
STMicroelectronics 8-pin SOIC power
crystal 32kHZ
M41T56
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Untitled
Abstract: No abstract text available
Text: 2 £L THIS DRAWIN G IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC 00 AD RESERVED. R E V I SIONS DIST LTR DESCRIPTION 07 Al A2 DATE DWN APVD EC OS I 2 - 0 4 0 9 - 0 4 20AUG2004 R E V PE R EC OS I 2 - 0 3 2 2 - 0 5
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20AUG2004
04SEP2007
06NOV2007
GOMAR2000
10SEP2000
I0SEP2000
I08-2062
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RJ11 4P4C
Abstract: rj11 4p to 3,5 jack 6p6c rj11 RJ11 6P6C RJ11 SPEC
Text: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. COPYRIGHT REVISIONS DIST DW LTR DESCRIPTION A2 DATE REVISED PER ECO-11-005140 DWN 31MAR11 APVD RK HMR TE LOGO 15.9 3.5 1.5 HOLD DOWN 3.00 -É> 0.10 w i LO o I 00 2 PLC _
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ECO-11-005140
31MAR11
--1734858--X
1--1734858--X
1734858-X
V2007
06N0V2007
RJ45/RJ11
RJ11 4P4C
rj11 4p to 3,5 jack
6p6c rj11
RJ11 6P6C
RJ11 SPEC
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T - BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S 2 -, - RESERVED. C O R P O R A T IO N . LOC D IS T AD 00 REVISIO N S D E S C R IP T IO N A' 14.22 2 0 .0 6 [.790]
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06NOV2007
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