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    06N03LB Search Results

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    Infineon Technologies AG IPB06N03LB

    MOSFET N-CH 30V 50A D2PAK
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    DigiKey IPB06N03LB Reel 1,000
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    Infineon Technologies AG IPD06N03LB G

    MOSFET N-CH 30V 50A TO252-3
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    DigiKey IPD06N03LB G Digi-Reel 1
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    Infineon Technologies AG IPU06N03LB G

    MOSFET N-CH 30V 50A TO251-3
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    Infineon Technologies AG IPB06N03LB G

    MOSFET N-CH 30V 50A D2PAK
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    06N03LB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PG-TO251-3

    Abstract: IPS06N03LB IPU06N03LB JESD22 06N03
    Text: 06N03LB OptiMOS 2 Power-Transistor 06N03LB Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 5.8 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPU06N03LB IPS06N03LB PG-TO251-3-11 PG-TO251-3 06N03LB PG-TO251-3 IPS06N03LB IPU06N03LB JESD22 06N03

    06N03L

    Abstract: Q67045-A5050 06n03
    Text: 06N03LB OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 6.3 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB06N03LB P-TO263-3 Q67045-A5050 06N03LB 06N03L Q67045-A5050 06n03

    06N03

    Abstract: IPD06N03LB JESD22 PG-TO252-3-11 P-TO252-3-11
    Text: 06N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 30 V R DS on),max 6.1 mΩ ID 50 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPD06N03LB PG-TO252-3-11 Q67042-S4263 06N03LB 06N03 JESD22 PG-TO252-3-11 P-TO252-3-11

    06N03

    Abstract: 06N03L PG-TO251-3 IPS06N03LB IPU06N03LB JESD22 06N03LB ips06n03
    Text: 06N03LB OptiMOS 2 Power-Transistor 06N03LB Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 5.8 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPU06N03LB IPS06N03LB PG-TO251-3-11 PG-TO251-3 06N03LB 06N03 06N03L PG-TO251-3 IPS06N03LB IPU06N03LB JESD22 06N03LB ips06n03

    Untitled

    Abstract: No abstract text available
    Text: 06N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 6.1 mΩ ID 50 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPD06N03LB PG-TO252-3 PG-TO252-3-11 06N03LB

    06N03

    Abstract: IPD06N03LB JESD22 PG-TO252-3-11 06n03l
    Text: 06N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 6.1 mΩ ID 50 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPD06N03LB PG-TO252-3 PG-TO252-3-11 06N03LB 06N03 JESD22 PG-TO252-3-11 06n03l

    06N03

    Abstract: IPB06N03LB JESD22
    Text: 06N03LB OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 6.3 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB06N03LB PG-TO263-3 P-TO263-3 06N03LB 06N03 IPB06N03LB JESD22

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    06N03LB

    Abstract: PG-TO252-3-11 IPD06N03LB Q67042-S4263
    Text: OptiMOS 2 Power-Transistor 06N03LB G 06N03LB G 06N03LB G 06N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 6.1 mΩ ID 50 A • N-channel, logic level


    Original     		PDF IPD06N03LB IPU06N03LB IPS06N03LB IPF06N03LB PG-TO252-3-11 06N03LB Q67042-S4263

    PG-TO252-3-11

    Abstract: TO252-3 IPD06N03LB JESD22
    Text: 06N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 6.1 mΩ ID 50 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPD06N03LB PG-TO252-3 PG-TO252-3-11 06N03LB PG-TO252-3-11 TO252-3 JESD22