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    Vishay Draloric

    Vishay Draloric CR1206D2504K7JS

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    Chip 1 Exchange CR1206D2504K7JS 15,970
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    06D2504 Datasheets Context Search

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    5SDF06D2504

    Abstract: abb 800
    Text: 5SDF 06D2504 5SDF 06D2504 Old part no. DM 827-620-25 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 2 500 I FAVm = 615 I FSM = 10 000 V TO = 1.196


    Original
    06D2504 1768/138a, DM/267/08a Aug-11 06D250A Aug-11 5SDF06D2504 abb 800 PDF

    5SGS 12F2500

    Abstract: ABB Typ RGC ITGQM GTO thyristor ABB
    Text: 5SGS 12F2500  5SGS 12F2500 Old part no. TG 908-1200-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 1 200 I TAVm = 630


    Original
    12F2500 1768/138a, TG/164/05b Mar-12 5SGS 12F2500 ABB Typ RGC ITGQM GTO thyristor ABB PDF

    Thyristor snubber

    Abstract: No abstract text available
    Text: 5SGS 12F3000 5SGS 12F3000 Old part no. TG 908-1200-30 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 3 000 I TGQM = 1 200 I TAVm = 630 I TSM = 10 000


    Original
    12F3000 12F3000 12F2500 1768/138a, TG/164/05 Jul-10 Jul-10 Thyristor snubber PDF

    Untitled

    Abstract: No abstract text available
    Text: 5SGS 16H3000 5SGS 16H3000 Old part no. TG 919-1600-30 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 3 000 I TGQM = 1 600 I TAVm = 760 I TSM = 14 000


    Original
    16H3000 16H3000 16H2500 1768/138a, TG/170/05 Jul-10 Jul-10 PDF

    abb cs 400

    Abstract: THYRISTOR 1200 5SGS08D2500
    Text: 5SGS 08D3000 5SGS 08D3000 Old part no. TG 907-800-30 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 3 000 I TGQM = 800 I TAVm = 395 I TSM = 4 500


    Original
    08D3000 08D3000 08D2500 1768/138a, TG/161/05 Jul-10 Jul-10 abb cs 400 THYRISTOR 1200 5SGS08D2500 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5SDF 06D3004 5SDF 06D3004 Old part no. DM 827-620-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000


    Original
    06D3004 06D3004 06D2504 1768/138a, DM/267/08 Jul-10 PDF

    5SGS 16H2500

    Abstract: No abstract text available
    Text: 5SGS 16H2500  5SGS 16H2500 Old part no. TG 919-1600-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 1 600 I TAVm = 760


    Original
    16H2500 1768/138a, TG/170/05a Sep-11 5SGS 16H2500 PDF

    5SGS 08D2500

    Abstract: 5SGS08D2500 abb cs 400 igcm abb 800 5SGS
    Text: 5SGS 08D2500  5SGS 08D2500 Old part no. TG 907-800-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 800 I TAVm = 395


    Original
    08D2500 1768/138a, TG/161/05a Sep-11 5SGS 08D2500 5SGS08D2500 abb cs 400 igcm abb 800 5SGS PDF

    Untitled

    Abstract: No abstract text available
    Text: 5SGS 12F2500  5SGS 12F2500 Old part no. TG 908-1200-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 1 200 I TAVm = 630


    Original
    12F2500 1768/138a, TG/164/05a Sep-11 PDF