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    06CNE8N Search Results

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    06CNE8N Price and Stock

    Infineon Technologies AG IPP06CNE8N G

    MOSFET N-CH 85V 100A TO220-3
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    DigiKey IPP06CNE8N G Tube 500
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    06CNE8N Datasheets Context Search

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    06CNE8N

    Abstract: No abstract text available
    Text: 06CNE8N G 06CNE8N G 06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO263) 6.2 m: ID 100 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 06CNE8N PG-TO262-3 06CNE8N

    IEC61249-2-21

    Abstract: IPP06CNE8N JESD22 PG-TO220-3
    Text: 06CNE8N G 06CNE8N G 06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CNE8N IPI06CNE8N IPP06CNE8N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 IEC61249-2-21 JESD22 PG-TO220-3

    IPP06CNE8N

    Abstract: JESD22 PG-TO220-3
    Text: 06CNE8N G 06CNE8N G 06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CNE8N JESD22 PG-TO220-3

    06CNE8N

    Abstract: No abstract text available
    Text: 06CNE8N G 06CNE8N G 06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 06CNE8N PG-TO262-3 06CNE8N

    IPP06CNE8N

    Abstract: JESD22 PG-TO220-3 06CNE8N
    Text: 06CNE8N G 06CNE8N G 06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CNE8N IPI06CNE8N IPP06CNE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CNE8N JESD22 PG-TO220-3 06CNE8N

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819