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    Infineon Technologies AG IPP06CN10N-G

    MOSFET N-CH 100V 100A TO220-3
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    DigiKey IPP06CN10N-G Tube 500
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    Infineon Technologies AG IPI06CN10N-G

    MOSFET N-CH 100V 100A TO262-3
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    DigiKey IPI06CN10N-G Tube 500
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    Infineon Technologies AG IPB06CN10N-G

    MOSFET N-CH 100V 100A D2PAK
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    DigiKey IPB06CN10N-G Reel 1,000
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    Others IPP06CN10NG

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    Chip 1 Exchange IPP06CN10NG 1,000
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    06CN10N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J 6920 A

    Abstract: J 6920 06CN10N IPP06CN10N JESD22 PG-TO220-3
    Text: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N J 6920 A J 6920 06CN10N JESD22 PG-TO220-3

    06cn10n

    Abstract: J 6920 A J 6920 mJ 6920 IPP06CN10N JESD22 PG-TO220-3 IPP06CN10NG
    Text: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N 06cn10n J 6920 A J 6920 mJ 6920 JESD22 PG-TO220-3 IPP06CN10NG

    06cn10n

    Abstract: 06cn10 DIODE D180 06CN IPI06CN10NG DIODE D100 to220
    Text: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 06CN10N PG-TO262-3 06cn10n 06cn10 DIODE D180 06CN IPI06CN10NG DIODE D100 to220

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    06CN10N

    Abstract: IPP06CN10N IEC61249-2-21 JESD22 PG-TO220-3 IPP06CN10NG
    Text: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CN10N IPI06CN10N IPP06CN10N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N IEC61249-2-21 JESD22 PG-TO220-3 IPP06CN10NG

    J 6920 A

    Abstract: ds 1-08 diode J 6920 06cn10n IPP06CN10N JESD22 PG-TO220-3
    Text: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 06CN10N J 6920 A ds 1-08 diode J 6920 06cn10n JESD22 PG-TO220-3

    J 6920

    Abstract: J 6920 A
    Text: 06CN10N G 06CN10N G 06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB06CN10N IPI06CN10N IPP06CN10N PG-TO263-3 06CN10N PG-TO262-3 J 6920 J 6920 A