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    Ohmite Mfg Co AH10928V06000HE

    ALUMINUM EXTRUSION 6"
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    DigiKey AH10928V06000HE Box 64 1
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    Richardson RFPD AH10928V06000HE 25
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    Lumileds L150-27805006000H0

    LED LUXEON WARM WHT 2700K 2020
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    Lumileds L150-40705006000H0

    LED LUXEON NEUT WHT 4000K 2020
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    Avnet Silica L150-40705006000H0 145,000 7 Weeks 20,000
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    Lumileds L150-57705006000H0

    LED LUXEON COOL WHITE 5700K 2020
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    Mouser Electronics L150-57705006000H0 19,879
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    Lumileds L150-27705006000H0

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    06000H Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function


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    78K0R/KE3 16-bit PD78F1142 PD78F1143 PD78F1144 PD78F1145 PD78F1146 78K0R/KE3 U17854EJ6V0UD00 U17854EJ6V0UD PDF

    A29L008

    Abstract: SA10 SA11 SA12 SA13 SA14 SA15 SA16
    Text: A29L008 Series 1M X 8 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max. n Current:


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    A29L008 KbyteX15 SA10 SA11 SA12 SA13 SA14 SA15 SA16 PDF

    am29f400bb

    Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
    Text: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements


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    Am29F400B 8-Bit/256 16-Bit) Am29F400 am29f400bb am29f400bb v am29f400 known good AM29F400B7 20185 AM29F400BT PDF

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


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    Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM PDF

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


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    S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032 PDF

    A29L800

    Abstract: A29L800V
    Text: A29L800 Series 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max.


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    A29L800 KbyteX15 KwordX15 48TFBGA) A29L800V PDF

    Architecture of TMS320C54XX

    Abstract: data addressing modes of TMS320C54xx digital TLV2772 STK 3 channel amp STK 5 channel amp STK power amplifier module overview C5402 TLV2272 TLV2544 TLV2548
    Text: Application Report SLAA093A - October 2000 Interfacing the TLV2544/TLV2548 ADC to the TMS320C5402 DSP Lijoy Philipose AAP Data Conversion ABSTRACT This application report presents a hardware and software solution for interfacing the TLV2544/TLV2548 12-bit, 200-ksps, 4/8-channel, low-power, serial analog-to-digital converters to the


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    SLAA093A TLV2544/TLV2548 TMS320C5402 12-bit, 200-ksps, 16-bit Architecture of TMS320C54XX data addressing modes of TMS320C54xx digital TLV2772 STK 3 channel amp STK 5 channel amp STK power amplifier module overview C5402 TLV2272 TLV2544 TLV2548 PDF

    amic a290021t-70

    Abstract: A290021T-70 A290021TL-70 A29002 A290021 A290021L IN3064
    Text: A29002/A290021 Series 256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90/120/150 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current


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    A29002/A290021 amic a290021t-70 A290021T-70 A290021TL-70 A29002 A290021 A290021L IN3064 PDF

    M29W008A

    Abstract: M29W008AB M29W008AT
    Text: M29W008AT M29W008AB 8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 80ns ■ PROGRAMMING TIME: 10µs typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte


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    M29W008AT M29W008AB TSOP40 M29W008A M29W008AB M29W008AT PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Am29LV200 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications


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    Am29LV200 8-Bit/128 16-Bit) PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS411-00003-1v0-E ASSP ISO/IEC 18000-6 Type-C Compliant FRAM Embedded UHF Band RFID LSI TM MB97R803A/B, MB97R804A/B • OVERVIEW This specification defines the LSI specification for the passive RFID Tag LSI “MB97R803A/B, MB97R804A/


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    DS411-00003-1v0-E MB97R803A/B, MB97R804A/B MB97R804A/ PDF

    tr8c

    Abstract: TMS28F200
    Text: TMS28F20ÛBZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SWS2dOO - JUNE 1 9 9 4 - REVISED SEPTEMBER 1997 • ■ I I I • • • • • • • • • • Organization . . . 262144 by 8 bits 131072 by 16 bits Array-Blocking Architecture


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    TMS28F20 TMS28F200BZB 8-BIT/131072 16-BIT 96K-Byte 128K-Byte 16K-Byte 28F200B2x70 28F200BZX80 28F200BZX90 tr8c TMS28F200 PDF

    NCC equivalent

    Abstract: No abstract text available
    Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors


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    TMS29F400T, TMS29F400B 8-BIT/262144 16-BIT SMJS843A 44-Pin 48-Pin 8-Blf/262144 NCC equivalent PDF

    ba qu

    Abstract: TC58F401
    Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58F400F / FT - 90, - 1 0 TC58F401F / FT - 90, - 1 0 SILICON GATE CMOS TENTATIVE DATA 4M 524,288 W O RD S x 8 BITS/262,144 W ORDS x16 BITS CMOS FLASH M EM O RY DESCRIPTION


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    TC58F400F TC58F401F BITS/262 TC58F400/401 TC58F4 TC58F400) 00000h 01FFFh 02000h ba qu TC58F401 PDF

    20510D

    Abstract: No abstract text available
    Text: P R E L IM IN A R Y AMD3 Am29LV004 4 Megabit 512 K x 8-Blt CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications


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    Am29LV004 20510D PDF

    AM29F100T

    Abstract: No abstract text available
    Text: HNA: AMDB Am29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V + 10% for read, erase, and program operations — Simplifies system-level power requirements


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    Am29F100 8-bit/64 16-bit) AM29F100T PDF

    Am29DL400BT

    Abstract: No abstract text available
    Text: MiN AR AMDZ1 Am29DL400B 4 Megabit 512 K x 8-Blt/2S6 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations Sector protection — Host system can program or erase in one bank,


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    Am29DL400B 16-Bit) 44-Pin 16-038-S044-2 Am29DL400BT PDF

    Untitled

    Abstract: No abstract text available
    Text: AMD£1 ADVANCE INFORM ATION Am29F004B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ 5.0 Volt single power supply operation ■ Top or bottom boot block configurations available — Minimizes system-level power requirem ents


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    Am29F004B 29F004B PDF

    29f1008

    Abstract: 29f100
    Text: FINAL AMDB Am29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Embedded Erase algorithm autom atically


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    Am29F100 8-bit/64 16-bit) 29F100 29f1008 29f100 PDF

    amd 29F400AB

    Abstract: 29F400AT 29F400AB
    Text: PR E L IM IN A R Y Am29F400AT/Am29F400AB 4 Megabit 524,288 x S-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory AdVMi“ o Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements


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    Am29F400AT/Am29F400AB S-Bit/262 16-Bit) 44-pin 48-pin Am29F400AT/Am 29F400AB Am29F400T/Am29F400B 18612B. amd 29F400AB 29F400AT 29F400AB PDF

    Untitled

    Abstract: No abstract text available
    Text: ' Pt: LiP,MI i AR AMD* Am29F200A 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ High performance


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    Am29F200A 8-Bit/128 16-Bit) PDF

    am29f400bb

    Abstract: No abstract text available
    Text: 'RH .v'IKMF AM Dii Am29F400B 4 Megabit (512 K x 8-Bit/256 K x 16-Bit dMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 vott-only operation for read, erase, and program operations — Minimizes system level requirements


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    Am29F400B 8-Bit/256 16-Bit) Am29F400 am29f400bb PDF

    29f004b

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION AM D il Am29F004B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ 5.0 Volt single power supply operation ■ Top or bottom boot block configurations available — Minimizes system-level power requirem ents


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    Am29F004B 29F004B 29f004b PDF

    am29f400b

    Abstract: am29f400bb 22AB AM29F400BT
    Text: AMDZ1 P R E L IM IN A R Y Am29F400B 4 Megabit 512 K X 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations


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    Am29F400B 8-Bit/256 16-Bit) Am29F400 am29f400bb 22AB AM29F400BT PDF