SUB45N03-13L
Abstract: No abstract text available
Text: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TrenchFETr Power MOSFETS D 175_C Junction Temperature D TO-263 G G D S Top View S SUB45N03-13L
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SUB45N03-13L
O-263
18-Jul-08
SUB45N03-13L
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Untitled
Abstract: No abstract text available
Text: XT49ML Vishay Dale Quartz Crystals 3.579MHz to 66.0MHz FEATURES • Low profile. • Hermetically sealed. • Tape and reel packaging. STANDARD ELECTRICAL SPECIFICATIONS FREQUENCY RANGE MHz MODE OF VIBRATION ESR MAX. (Ohms) 3.579 - 4.999 5.0 - 5.999 6.0 - 7.999
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XT49ML
579MHz
50ppm
XT49ML
05-Nov-01
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC HM ALL RIGHTS RESERVED. - 1 D 1 REVISIONS DIST 00 P LTR DESCRIPTION DATE DWN APVD J REV ECO-12-019894 12NOV2012 JM SJ J1 REV ECO-14-002629 25FEB2014 JM SJ MATERIAL: JACK HOUSING - POLYCARBONATE, 94V-0 RATED.
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12NOV2012
ECO-12-019894
ECO-14-002629
25FEB2014
15NOV01
05NOV01
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PA66-GF20
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. VERTRAULICHE UNVEROEFFENTLICHTE ZEICHNUNG C COPYRIGHT 2000 2 3 20 01 NOV RELEASED FOR PUBLICATION FREI FUER VEROEFFENTLICHUNG ALL RIGHTS RESERVED. ALLE RECHTE VORBEHALTEN MATED WITH: PASSEND ZU: LOC 1534127 A3 Wie gezeigt: REVISIONS
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EGAUT01195
03APR2003
01JUL2013
E-10-004978)
E-13-010548
19MAR2010
05-NOV-01
DIN16901
21POS.
21polig
PA66-GF20
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Si1304DL
Abstract: No abstract text available
Text: SPICE Device Model Si1304DL Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1304DL
05-Nov-01
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M29W160DB
Abstract: M29W160DT TFBGA48
Text: M29W160DT M29W160DB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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M29W160DT
M29W160DB
TSOP48
M29W160DB
M29W160DT
TFBGA48
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TSOP48 outline
Abstract: M29W160DB M29W160DT TFBGA48 A/M29F010B(45/70/90/MT352/CG/M29W160DT
Text: M29W160DT M29W160DB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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M29W160DT
M29W160DB
TSOP48
TSOP48 outline
M29W160DB
M29W160DT
TFBGA48
A/M29F010B(45/70/90/MT352/CG/M29W160DT
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M29W160DB
Abstract: M29W160DT TFBGA48
Text: M29W160DT M29W160DB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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M29W160DT
M29W160DB
TSOP48
M29W160DB
M29W160DT
TFBGA48
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1251 8pin
Abstract: Si9181 Si9181DQ-15-T1 Si9181DQ-18-T1 Si9181DQ-20-T1 Si9181DQ-25-T1 Si9181DQ-28-T1 Si9181DQ-30-T1 Si9181DQ-33-T1 Si9181DQ-50-T1
Text: Si9181 New Product Vishay Siliconix Micropower 350-mA CMOS LDO Regulator With Error Flag/Power-On-Reset FEATURES D D D D D D D Fixed 1.5-V, 1.8-V, 2.0-V, 2.5-V, 2.8-V, 3.0-V, 3.3-V, 5.0-V, or Adjustable Output Voltage Options D Other Output Voltages Available by Special Order
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Si9181
350-mA
150-mV
600-mA
100-mV
25-kW
150-kW
01-mF
1251 8pin
Si9181
Si9181DQ-15-T1
Si9181DQ-18-T1
Si9181DQ-20-T1
Si9181DQ-25-T1
Si9181DQ-28-T1
Si9181DQ-30-T1
Si9181DQ-33-T1
Si9181DQ-50-T1
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Untitled
Abstract: No abstract text available
Text: XT49M Vishay Dale Quartz Crystals 3.579MHz to 66.0MHz FEATURES • Low profile. • Hermetically sealed. • Tape and reel packaging. STANDARD ELECTRICAL SPECIFICATIONS FREQUENCY RANGE MHz STANDARD SPECIFICATIONS Operating Temperature Range: 0°C to + 70°C. (Contact
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XT49M
579MHz
50ppm
XT49M
05-Nov-01
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M29W160DB
Abstract: M29W160DT TFBGA48 CP-26
Text: M29W160DT M29W160DB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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M29W160DT
M29W160DB
TSOP48
M29W160DB
M29W160DT
TFBGA48
CP-26
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M29W160DB
Abstract: M29W160DT TFBGA48
Text: M29W160DT M29W160DB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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M29W160DT
M29W160DB
TSOP48
M29W160DB
M29W160DT
TFBGA48
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SUB45N03-13L
Abstract: S-05010-Rev
Text: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TrenchFETr Power MOSFETS D 175_C Junction Temperature D TO-263 G G D S Top View S SUB45N03-13L
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SUB45N03-13L
O-263
08-Apr-05
SUB45N03-13L
S-05010-Rev
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SUB45N03-13L
Abstract: No abstract text available
Text: SUB45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.013 @ VGS = 10 V 45a 0.02 @ VGS = 4.5 V 45a D TrenchFETr Power MOSFETS D 175_C Junction Temperature D TO-263 G G D S Top View S SUB45N03-13L
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SUB45N03-13L
O-263
S-05010--Rev.
05-Nov-01
SUB45N03-13L
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