Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2006 2 3 1 2006 RELEASED FOR PUBLICATION REVISIONS ALL RIGHTS RESERVED. BY - 69.1+0.6 P C 13.3 D DESCRIPTION LTR C1 DWN APVD SERIES GEOMETRY 23MAY2007 SKA TG UPDATED TOLERANCE LENGHT 61.1 05MAY2011 AV GT ECR-14-001570
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27JAN2014
05MAY2011
ECR-14-001570
23MAY2007
A/42V
A/125V
13APR2006
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PDF
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Untitled
Abstract: No abstract text available
Text: STM32W108C8 High-performance, IEEE 802.15.4 wireless system-on-chip with 64-Kbyte Flash memory Datasheet - production data Features • Complete system-on-chip – 32-bit ARM Cortex -M3 processor – 2.4 GHz IEEE 802.15.4 transceiver & lower MAC – 8-Kbyte RAM and 64-Kbyte Flash memory
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STM32W108C8
64-Kbyte
32-bit
AES128
DocID018587
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PDF
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to3fp
Abstract: STW60N65
Text: STW60N65M5 STFW60N65M5 N-channel 650 V, 0.049 Ω, 46 A MDmesh V Power MOSFET in TO-247, TO-3PF Features • Order codes VDSS @ TJmax RDS on max ID STFW60N65M5 STW60N65M5 710 V < 0.059 Ω 46 A 1 Worldwide best RDS(on) * area amongst the silicon based devices
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STW60N65M5
STFW60N65M5
O-247,
STFW60N65M5
STW60N65M5
O-247
to3fp
STW60N65
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PDF
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Untitled
Abstract: No abstract text available
Text: WT-106CP12 A Zener Diode Chips for ESD Protection 1. Feature and Application: 1-1 This specification is suitable for P/N zener single-direction structure chips use. 1-2 Paralleled the LED. 1-3 Unity pad metal (one wire bonding applied only). 1-4 One-way Zener diode protection.
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WT-106CP12
05-May-2011
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PDF
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Untitled
Abstract: No abstract text available
Text: HSP061-8M16 8-line ESD protection for high speed lines Features • Ultralarge bandwidth: 6.3 GHz ■ Ultralow capacitance: 0.6 pF ■ Low time domain reflection ■ Low leakage current: 100 nA at 25 °C ■ Extended operating junction temperature range: -40 °C to 150 °C
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HSP061-8M16
QFN-16L
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PDF
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Untitled
Abstract: No abstract text available
Text: WTG3043 Surface Mount N-Channel Power MOSFET P b Lead Pb -Free 3 1 1. Gate 2. Source 3. Drain 2 Features: * * * * * Enables High Density PCB Manufacturing 44% Smaller Footprint than SC−89 and 38% Thinner than SC−89 Low Voltage Drive Makes this Device Ideal for Portable Equipment
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WTG3043
OT-723
05-May-2011
OT-723
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PDF
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Untitled
Abstract: No abstract text available
Text: HSP061-8M16 8-line ESD protection for high speed lines Datasheet - production data Applications The HSP061-8M16 is designed to protect against electrostatic discharge on sub micron technology circuits driving: • HDMI 1.3 and 1.4 • Digital Video Interface
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HSP061-8M16
HSP061-8M16
QFN-16L
DocID18055
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PDF
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Untitled
Abstract: No abstract text available
Text: HSP061-8M16 8-line ESD protection for high speed lines Features • Ultralarge bandwidth: 6.3 GHz ■ Ultralow capacitance: 0.6 pF ■ Low time domain reflection ■ Low leakage current: 100 nA at 25 °C ■ Extended operating junction temperature range: -40 °C to 150 °C
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Original
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HSP061-8M16
QFN-16L
HSP061-8M16
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PDF
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Untitled
Abstract: No abstract text available
Text: STW60N65M5 STFW60N65M5 N-channel 650 V, 0.049 Ω, 46 A MDmesh V Power MOSFET in TO-247, TO-3PF Features • Order codes VDSS @ TJmax RDS on max ID STFW60N65M5 STW60N65M5 710 V < 0.059 Ω 46 A Worldwide best RDS(on) * area amongst the silicon based devices
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Original
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STW60N65M5
STFW60N65M5
O-247,
O-247
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PDF
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SCX12
Abstract: preseth PM0056 TI410
Text: STM32W108C8 High-performance, IEEE 802.15.4 wireless system-on-chip with 64-Kbyte Flash memory Datasheet − production data Features • ■ ■ ■ Complete system-on-chip – 32-bit ARM Cortex -M3 processor – 2.4 GHz IEEE 802.15.4 transceiver & lower
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Original
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STM32W108C8
64-Kbyte
32-bit
AES128
SCX12
preseth
PM0056
TI410
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 20 LOC - ALL RIGHTS RESERVED. B1 OR B2 A1 OR A2 D 12.63 23.97 9.15 4.20 2.40 11.25 C 2.50 1 REVISIONS DIST - P LTR DESCRIPTION A3 REV PER ECR-12-013085 24JULY2012 LW AC
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24JULY2012
ECR-12-013085
ECR-13-017562
14NOV2013
UL94V-0
60MIN.
05MAY2011
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PDF
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STM32W
Abstract: STM32W108 RW-67 SVC 471 20
Text: STM32W108C8 High-performance, IEEE 802.15.4 wireless system-on-chip with 64-Kybte Flash memory Features • ■ ■ ■ Complete system-on-chip – 32-bit ARM Cortex -M3 processor – 2.4 GHz IEEE 802.15.4 transceiver & lower MAC – 8-Kbyte RAM and 64-Kbyte Flash memory
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Original
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STM32W108C8
64-Kybte
32-bit
64-Kbyte
AES128
STM32W
STM32W108
RW-67
SVC 471 20
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PDF
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schematic diagram MPPT
Abstract: schematic diagram PWM solar charger solar charger schematic nimh STEVAL-ISV006V2 high power mppt solar charger schematic solar charger mppt schematic diagram solar charger schematic diagram SPV1040 mppt solar charger schematic MPPT Algorithm
Text: STEVAL-ISV006V2 Up to 5 W solar battery charger with embedded MPPT based on the SPV1040 Data brief Features • High-efficiency monolithic step-up DC-DC converter ■ Proprietary “perturb & observe” embedded MPPT algorithm ■ Very low input voltage down to 0.3 V
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STEVAL-ISV006V2
SPV1040
STEVAL-ISV006V2
schematic diagram MPPT
schematic diagram PWM solar charger
solar charger schematic nimh
high power mppt solar charger schematic
solar charger mppt schematic diagram
solar charger schematic diagram
SPV1040
mppt solar charger schematic
MPPT Algorithm
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PDF
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Untitled
Abstract: No abstract text available
Text: STM32W108C8 High-performance, IEEE 802.15.4 wireless system-on-chip with 64-Kybte Flash memory Features • ■ ■ ■ Complete system-on-chip – 32-bit ARM Cortex -M3 processor – 2.4 GHz IEEE 802.15.4 transceiver & lower MAC – 8-Kbyte RAM and 64-Kbyte Flash memory
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Original
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STM32W108C8
64-Kybte
32-bit
64-Kbyte
AES128
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PDF
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Untitled
Abstract: No abstract text available
Text: TH I S DRAWING IS UNPUBLISHED. C O P Y R I G HT 2 0 0 6 RELEASED BY TYCO 69.r ELECTRONICS FOR COR P O R AT I O N . A L L PUBLICATION R|CHTS 2006 LOC RESERVED. D I ST R E V I S I ON S Al LTR 0.6 C1 [Ml DESCRIPTION DWN DATE APVD SER IES GEOMETRY 23MAY2007 SKA
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OCR Scan
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23MAY2007
05MAY2011
A/42V
13APR2006
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PDF
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Untitled
Abstract: No abstract text available
Text: 3 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. By - REVISIO N S D IST AP LTR B1 DESCRIPTION DWN DATE REVISED DESIGN ECO-12-009649 23MAY2012 APVD NCL GOJ D D C C OS ITENS 1 e 2 DEVEM SER FORNECIDOS DESMONTADOS ITENS 1 AND 2 MUST BE SUPPLIED NOT ASSEMBLED
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OCR Scan
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ECO-12-009649
23MAY2012
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PDF
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