PC28F00AG18
Abstract: PC28F512 PC28F256G18F PC28F00AG PC28F00AG18FE PC28F256G18FE pc28f00 2N 8904 PC28F512G18FE PC28F00AG18FF
Text: 128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory Features Micron StrataFlash Embedded Memory P/N P/N P/N P/N – – – – PC28F128G18xx PC28F256G18xx PC28F512G18xx PC28F00AG18xx Features • Power – Core voltage: 1.7 V - 2.0 V – I/O voltage: 1.7 V - 2.0 V
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128Mb,
256Mb,
512Mb,
PC28F128G18xx
PC28F256G18xx
PC28F512G18xx
PC28F00AG18xx
512-Mbit,
16-word
09005aef8448483a
PC28F00AG18
PC28F512
PC28F256G18F
PC28F00AG
PC28F00AG18FE
PC28F256G18FE
pc28f00
2N 8904
PC28F512G18FE
PC28F00AG18FF
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SA452
Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this
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Am29LV2562M
S29GL512N
S29GL512N
SA452
SA336
SA424
120R
SA487
EE8000
a78000a7ffff
c58000c5ffff
SA4871
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JS28F512M29
Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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M29EW
256-Mbit,
512-Mbit,
x8/x16,
100ns
512-word
14MB/s)
Kbytes/64
PC28F00AM29EWHA
11-Apr-2011
JS28F512M29
js28f256m29
js28f256
JS28F512
pc28f00am29ew
JS28F00AM29EW
pc28f00am29
js28f00
PC28F00AM29EWHA
JS28F256M29EWL
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M29W128GL
Abstract: M29W128GH70 M29W128G M29W128GL7
Text: M29W128GH M29W128GL 128-Mbit 16 Mbit x8 or 8 Mbit x16, page, uniform block 3 V supply flash memory Features BGA Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)
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M29W128GH
M29W128GL
128-Mbit
64-byte
M29128GH/L:
Kbytes/64
M29W128GL
M29W128GH70
M29W128G
M29W128GL7
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Spansion S29GL512N11
Abstract: No abstract text available
Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages
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S29GLxxxN
S29GL512N,
S29GL256N,
S29GL128N
128-word/256-byte
8-word/16-byte
S29GLxxxN
27631sb2
Spansion S29GL512N11
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asme SA388
Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ
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S29GL-M
S29GL256MS29GL128MS29GL064MS29GL032M
S29GL128MS29GL128N
S29GL256MS29GL256N
S29GLxxxN
00-B-5
S29GL032M
LAA064
asme SA388
gl128m
A2113
S29GL256
E78000
S29GL128N
TSOP56 S29GL128N
sa32sa35
S29GLxxxM
BGA-63
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FAA064
Abstract: SPANSION S29GL128 S29GL128 S29GL-N S29GL-P GL128N GL256N S29GL128N S29GL256N
Text: S29GL-N MirrorBit Flash Family with Alternative BGA Layout S29GL256N, S29GL128N 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology S29GL-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29GL-N
S29GL256N,
S29GL128N
S29GL-N
FAA064
SPANSION S29GL128
S29GL128
S29GL-P
GL128N
GL256N
S29GL128N
S29GL256N
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120R
Abstract: C8800
Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29LV2562M
120R
C8800
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EN25QH
Abstract: 1AEF00 cFeon* SPI Flash
Text: EN25QH256 EN25QH256 256 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Single power supply operation - Full voltage range: 2.7-3.6 volt • Serial Interface Architecture - SPI Compatible: Mode 0 and Mode 3 • 256 M-bit Serial Flash - 256 M-bit/32,768 K-byte/131,072 pages
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EN25QH256
M-bit/32
K-byte/131
80MHz
50MHz
EN25QH
1AEF00
cFeon* SPI Flash
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l256mh113
Abstract: L256ML123R
Text: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29LV256M
l256mh113
L256ML123R
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Untitled
Abstract: No abstract text available
Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,
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S29GL-N
S29GL512N,
S29GL256N,
S29GL128N
S29GL-N
S29GL128P,
S29GL256P,
S29GL512P
S29GL128N,
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L256MH113R
Abstract: L256ML113R
Text: Am29LV256M Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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Am29LV256M
L256MH113R
L256ML113R
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a22t
Abstract: S19G S29GL-N
Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications
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S29GL-N
S29GL512N,
S29GL256N,
S29GL128N
a22t
S19G
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S29GL-N
Abstract: 1E300
Text: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this
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S29GL512/256/128N
S29GL512N,
S29GL256N,
S29GL128N
S29GL-N
1E300
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7be0
Abstract: No abstract text available
Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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M29EW
256-Mbit,
512-Mbit,
x8/x16,
100ns
512-word
48MB/s)
Kbytes/64
7be0
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Untitled
Abstract: No abstract text available
Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous
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M18-90nm/65nm)
512-Mbit
16-bit
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s29gl032m10tair
Abstract: No abstract text available
Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics
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S29GLxxxM
S29GL256M,
S29GL128M,
S29GL064M,
S29GL032M
32Megabit,
128-word/256-byte
8-word/16-byte
BGA-80P-M02
s29gl032m10tair
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M29DW256G
Abstract: M29dw256 spansion TSOP56
Text: M29DW256G 256-Mbit x16, multiple bank, page, dual boot 3 V supply flash memory Features BGA Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 9 V for fast program (optional) Asynchronous random/page read
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M29DW256G
256-Mbit
32Mbit
96Mbit
M29DW256G
M29dw256
spansion TSOP56
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SCSP M18
Abstract: PF38F 3098* intel PF38F4050
Text: Intel StrataFlash Cellular Memory M18 Datasheet Product Features High performance Read, Program and Erase — 93 ns initial access for reads — 512-Mbit device: 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 256-Mbit device: 133 MHz with zero wait-state
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512-Mbit
256-Mbit
16-bit
107-ball
PF38F4050M0Y0C0
PF38F5050M0Y0C0
PF38F5060M0Y0C0
SCSP M18
PF38F
3098* intel
PF38F4050
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S70GL01GN00
Abstract: S29GL01GP S29GL512N
Text: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: The S70GL01GN has been retired and is not recommended for designs. For new and current designs, S29GL01GP
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S70GL01GN00
S70GL01GN
S29GL01GP
S29GL01GP
S29GL512N
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SA293
Abstract: SA273 988000
Text: DATASHEET Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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Am29LV256M
16-Bit/32
16-word/32-byte
56-pi
SA293
SA273
988000
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L256ML
Abstract: SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110
Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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Am29LV256M
16-Bit/32
128-word/256-byte
8-word/16-byte
L256ML
SA4871
BD8000
sa340
transistor SA427
SA370
8A000
740-0007
Am29LV256
SA36-110
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M29dw127
Abstract: No abstract text available
Text: M29DW127G 128-Mbit 8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot 3 V supply flash memory Features Supply voltage – VCC = 2.7 to 3.6 V for program, erase and read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)
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M29DW127G
128-Mbit
32-word
M29dw127
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Untitled
Abstract: No abstract text available
Text: fa« kjliM ORDERING CODE: 1 ICU Tf 06 G RELEASED PER ECN 95-033 PART # EA25 XX -D XX C -00C S E R IE S -NUMBER OF PO SITIO N S' PER ROW 10 - 44 "G“ DIMENSION-— 45 = .045 56 = .056 SOLDER / FLUX TYPE -C = Sn60 Pb40 RMA
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OCR Scan
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05E0000
EA25XX-DXXC-00C
NAS25RI
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