Si5475DC
Abstract: Si5475DC-T1
Text: Si5475DC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.031 @ VGS = -4.5 V -7.6 -12 0.041 @ VGS = -2.5 V -6.6 0.054 @ VGS = -1.8 V -5.8 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BF XX Lot Traceability
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Si5475DC
Si5475DC-T1
S-21251--Rev.
05-Aug-02
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Si7866DP
Abstract: No abstract text available
Text: Si7866DP New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Low rDS(on) D PWM (Qgd and RG) Optimized PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0025 @ VGS = 10 V 29 0.00375 @ VGS = 4.5 V 25 APPLICATIONS D Low-Side MOSFET in Synchronous Buck
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Si7866DP
S-21412--Rev.
05-Aug-02
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h 9409
Abstract: diode 9409 qfnc S3310 DG9404 DG9408 DG9409 s4 vishay DG9408DN DG9409DN
Text: DG9408/9409 New Product Vishay Siliconix Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers FEATURES BENEFITS APPLICATIONS D 2.7-to 12-V Single Supply or "3- to "6-V Dual Supply Operation D Low On-Resistance—rON: 3.9 W Typ. D Fast Switching: tON — 42 ns, tOFF — 24 ns
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DG9408/9409
000-V
08-Apr-05
h 9409
diode 9409
qfnc
S3310
DG9404
DG9408
DG9409
s4 vishay
DG9408DN
DG9409DN
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fusible
Abstract: M25SI
Text: M25SI Vishay Draloric Thin Film, Rectangular, Fusible, Resistor Chips FEATURES • Metal film on high quality ceramic • Special protective top coat • Flame retardant • SnPb contacts on Ni barrier layer • Fusible resistor for constant voltage • Automatic placement compatibility
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M25SI
CECC40000
EN140400
05-Aug-02
fusible
M25SI
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Si5975DC
Abstract: Si5975DC-T1
Text: Si5975DC Vishay Siliconix Dual P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.086 @ VGS = -4.5 V -4.1 -12 0.127 @ VGS = -2.5 V -3.4 0.164 @ VGS = -1.8 V -3.0 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code
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Si5975DC
Si5975DC-T1
18-Jul-08
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Si5433DC
Abstract: Si5433DC-T1
Text: Si5433DC Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.040 @ VGS = -4.5 V -6.7 0.052 @ VGS = -2.5 V -5.9 0.072 @ VGS = -1.8 V -5.0 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BD XX Lot Traceability
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Si5433DC
Si5433DC-T1
18-Jul-08
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VCS332
Abstract: VCS301
Text: 300 Series Vishay Foil Resistors Bulk Metal Foil Technology Precision Current Sensing Resistors FEATURES • Low Ohmic Value: to 0.005Ω • Temperature Coefficient of Resistance: 15ppm/°C at 0.005Ω • Tolerance: to 5% @ 0.005Ω See Table 1 Product may not
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15ppm/
VCS301,
VCS302)
VCS331,
VCS332)
10ppm/
05-Aug-02
VCS332
VCS301
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ChipFET
Abstract: Si5904DC Si5904DC-T1
Text: Si5904DC Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 D1 1206-8 ChipFETt D2 1 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 Marking Code CB XX Lot Traceability and Date Code
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Si5904DC
Si5904DC-T1
S-21251--Rev.
05-Aug-02
ChipFET
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IEC60286-1
Abstract: IEC60294 IEC60301 PMA0207
Text: PMA0207 Vishay Draloric Metal Film Resistors, Precision, High Stability FEATURES • Special stabilized metal alloy on high quality ceramic • Very low TC and tight tolerances • Excellent long term stability • Suitable for precision measuring techniques and precision
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PMA0207
CECC40000
05-Aug-02
IEC60286-1
IEC60294
IEC60301
PMA0207
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Si5463EDC
Abstract: Si5463EDC-T1
Text: Si5463EDC Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) -20 20 rDS(on) (Ω) ID (A) 0.062 @ VGS = -4.5 V -5.1 0.068@ VGS = -3.6 V -4.9 0.085 @ VGS = -2.5 V -4.4 0.120 @ VGS = -1.8 V -3.7 S 1206-8 ChipFETt 1 D D G 5.4 kΩ D
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Si5463EDC
Si5463EDC-T1
08-Apr-05
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104M
Abstract: MIL-R-39009 VPR247 VHP4
Text: VHP-3, VHP-4, VPR247 Vishay Foil Resistors Bulk Metal Foil Technology Hermetically Sealed Power and Current Sensing Resistors FEATURES • Temperature Coefficient of Resistance Nominal TCR3: + 0.6ppm/°C 0°C to + 25°C ; – 0.6ppm/°C (+ 25°C to + 60°C);
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VPR247
VPR2347.
05-Aug-02
104M
MIL-R-39009
VPR247
VHP4
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Untitled
Abstract: No abstract text available
Text: Si5463EDC Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) -20 20 rDS(on) (Ω) ID (A) 0.062 @ VGS = -4.5 V -5.1 0.068@ VGS = -3.6 V -4.9 0.085 @ VGS = -2.5 V -4.4 0.120 @ VGS = -1.8 V -3.7 S 1206-8 ChipFETt 1 D D G 5.4 kΩ D
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Si5463EDC
Si5463EDC-T1
18-Jul-08
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diode MARKING CODE A9
Abstract: S-21339 Si2309DS diode MARKING CODE A9 sot23
Text: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) -60 rDS(on) (W) ID (A) 0.340 @ VGS = -10 V - 1.25 0.550 @ VGS = -4.5 V -1 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2309DS (A9)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2309DS
O-236
OT-23)
08-Apr-05
diode MARKING CODE A9
S-21339
diode MARKING CODE A9 sot23
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TRANSISTOR SMD MARKING CODE spt
Abstract: ta114 Marking Code For SMD Devices SMD PNP MARKING DE PDTA114
Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA114T series PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open Product specification Supersedes data of 1999 Apr 13 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
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PDTA114T
01-May-99)
TRANSISTOR SMD MARKING CODE spt
ta114
Marking Code For SMD Devices
SMD PNP MARKING DE
PDTA114
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w3224
Abstract: SI3473DV
Text: Si3473DV New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 rDS(on) (W) ID (A) 0.023 @ VGS = -4.5 V -7.9 0.029 @ VGS = -2.5 V - 7.0 0.041 @ VGS = -1.8 V - 5.9 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra Low On-Resistance
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Si3473DV
23-Jul-02
w3224
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Untitled
Abstract: No abstract text available
Text: Si5443DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.065 @ VGS = -4.5 V 4.9 0.074 @ VGS = -3.6 V 4.6 0.110 @ VGS = -2.5 V 3.8 S 1206-8 ChipFETt 1 D D G D D D D Marking Code G BB XX S Lot Traceability
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Si5443DC
Si5443DC-T1
08-Apr-05
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Si5435DC
Abstract: Si5435DC-T1
Text: Si5435DC Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) ID (A) 0.050 @ VGS = -10 V -5.6 0.080 @ VGS = -4.5 V -4.0 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BE XX Lot Traceability and Date Code Part # Code
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Si5435DC
Si5435DC-T1
S-21251--Rev.
05-Aug-02
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1240P
Abstract: No abstract text available
Text: 1240 Vishay Foil Resistors Bulk Metal Foil Technology Precision Trimming Potentiometers, 1/4 Inch Square, RJ26 Style, Designed to Meet or Exceed The Requirements of Mil-PRF-39035, Char. H FEATURES • Temperature Coefficient of Resistance TCR : ± 10ppm/°C. (– 55°C to + 150°C Ref. @ + 25°C); Through
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Mil-PRF-39035,
10ppm/
25ppm/
08-Apr-05
1240P
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PORCELAIN
Abstract: HVW2 999k HVW1
Text: HVW, MVW Vishay Dale Metal Alloy Resistors, Special Purpose, High Voltage FEATURES • HVW and MVW are uncoated. HVX blue flameproof coating available on request. • Semi-precision: ± 5%, ± 10%, ± 20% • Axial leads: HVW = Tinned copper. MVW = Copper clad steel.
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05-Aug-02
PORCELAIN
HVW2
999k
HVW1
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Si2309DS
Abstract: No abstract text available
Text: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) -60 rDS(on) (W) ID (A) 0.340 @ VGS = -10 V - 1.25 0.550 @ VGS = -4.5 V -1 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2309DS (A9)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2309DS
O-236
OT-23)
S-21339--Rev.
05-Aug-02
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Si5903DC
Abstract: Si5903DC-T1
Text: Si5903DC Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.155 @ VGS = -4.5 V 2.9 0.180 @ VGS = -3.6 V 2.7 0.260 @ VGS = -2.5 V 2.2 S1 S2 1206-8 ChipFETt 1 S1 D1 G1 G1 D1 G2 S2 D2 G2 D2 Marking Code
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Si5903DC
Si5903DC-T1
08-Apr-05
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Si5435DC
Abstract: 41AR Si5435DC-T1
Text: Si5435DC Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) ID (A) 0.050 @ VGS = -10 V -5.6 0.080 @ VGS = -4.5 V -4.0 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BE XX Lot Traceability and Date Code Part # Code
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Si5435DC
Si5435DC-T1
08-Apr-05
41AR
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MSM10A-05
Abstract: msm10a-03 M8340109 Vishay Dale 1 ohm resistorS M83401 RZ08 msm08c RZ050 resistor 220 resistor 270 ohm
Text: MSM Vishay Dale Thick Film Resistor Networks Military, MIL-PRF-83401 Qualified, Type RZ Single-In-Line, Molded SIP; 01, 03, 05 Schematics FEATURES • MIL-PRF-83401 qualified • 0.195" [4.95mm] "A" and 0.350" [8.89mm] "C" maximum seated heights • Highly stable thick film
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MIL-PRF-83401
100ppm/
300ppm/
MIL-PRF-83401
MIL-STD-202,
05-Aug-02
MSM10A-05
msm10a-03
M8340109
Vishay Dale 1 ohm resistorS
M83401
RZ08
msm08c
RZ050
resistor 220
resistor 270 ohm
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS A CONTROLLED DOCUMENT. DO NOT SCALE LOC R E V IS IO N S DIST AP DESCRIPTION LTR B DO NOT REVISE EXCEPT BY CAD DATE RELEASED REVISED BY EC L B Q Q -Q 1 2 4 / 0 3 REVISED BY E C O - 0 6 - 0 2 0 3 3 7 DWN APVD MRB PLF EGS PLF 01SET06 RKL PLF 05AUG02
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01SET06
05AUG02
05AUG2002
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