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    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC D 05GM33Ô G0G3777 T • ALGR T-91-01 PROCESS BGA Process BG A Power Schottky Diode P ro ce ss B G A is a silicon Schottky-barrier diode de sig n e d for high-power applications. It can operate with forward currents of up to 3 A and has a typical


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    PDF OSGM33Ã G0G3777 T-91-01 -H054

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION subject to change without notice July?, 1998 Suffix '-L T ' & '-UA* Pinning CHOPPER-STABILIZED, PRECISION HALL-EFFECT SWITCH The A3240—Hall-effect switch is an extremely temperature-stable and stress-resistant sensor especially suited for operation over extended tempera­


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    PDF A3240â MH-014D 014Dmm

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    Abstract: THC3719 THC3720 THC3867 THC3868 THC5193 THC5194 THC5195 THC5333 THC6034
    Text: A L L E GR O M I C R O S Y S T E M S 8 5 1 4 0 1 9 S P R A GU E. INC ^3 D • 05GM33Ô S E M I C O N D S / ICS D0D3S7Ö 3 ■ AL GR 93D 03578 if BIPOLAR TRANSISTOR CHIPS PNP Transistors Power Devices ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type THC3719


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    PDF 0S0M33S THC3719 THC3720 THC3867 THC3868 THC5333 THC6034 THC6035 THC6036 THC6303 UFF 50-02 THC5193 THC5194 THC5195