Untitled
Abstract: No abstract text available
Text: GaAs MMIC Power Amplifier [jHAIph in S O I C 16 Plastic Package AP103-64 Features • Saturated Power Up To 31 dBm ■ 6 Volt Operation ■ Efficiency Up To 65% ■ Idle Current Typically Less Than 80 mA ■ On Chip Bias Network Converts - 4 Volt Supplies
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AP103-64
SOIC16
AP103-64
ce8-31
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
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Untitled
Abstract: No abstract text available
Text: •ísSKS GaAs MMIC Two Watt High î ? ‘ 1 _. Linearity Cellular SPDT Switch EBAIp'hi AS103-59 Features ■ High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control
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AS103-59
AS103-59
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
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Untitled
Abstract: No abstract text available
Text: ËSAlph 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Chip Layout Features • Broad Coverage of K a-B and ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 G H z ■ Dual Drain Bias ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface Electrical Specifications at 25°C
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AA038P1-00
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
AT002N5-10
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPDT FET Switch EBAlph Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 Features • Broadband D C -6 GHz ■ Low Loss ■ Reflective Open ■ Low D.C. Power Consumption ■ Excellent Intermodulation ProductVTemp. Stability ■
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AS006R2-01,
AS006R2-10,
AS004R2-08,
AS004R2-11
AS004R2â
AS006R2â
AS006R2-01)
AK006L1-01
AS004M2-11
AT002N5-00
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AF002C1-32
Abstract: AF002C1-39 E 212 fet AS006M2-10 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01 S443
Text: GaAs MMIC Control FET in SOT 143 03A lp ft DC-2.5 GHz AF002C1-32 Features • Low Cost ■ Small SOT 143 Package ■ Series or Shunt Configuration ■ Low DC Current Drain ■ Ideal Switch Building Block Absolute Maximum Ratings Description RF Input Power:
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AF002C1-32
AF002C1-32
AF002C1-39
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
E 212 fet
AS006M2-10
AD004T2-00
AD004T2-11
AK006R2-01
AS006M1-01
S443
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AS117-45
Abstract: AD004T2-00 AK006R2-01
Text: GaAs MMIC FET10 Watt Diversity Switch In SOW 16 Package DC-2.0 GHz • " " ■ ■ ■ « ■ ■ ■ 03 Alpha t v ■,. : v r - r ^ - .n I ^w A S 11 7 -4 5 Features High Power P - 1 dB > 10 Watts Integrated Decoder Chip that Provides Two Line Voltage Control
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FET10
AS117-45
DC-2000
DC-1000
04M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AD004T2-00
AK006R2-01
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AFM02N5-55
Abstract: AD004T2-00 AD004T2-11 AFM02N5-56 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10 S443 92260
Text: Low Noise Packaged GaAs MESFET Alph AFM02N5-55, AFM02N5-56 Drain Features Source • Low Noise Figure, 1.1 dB at 12 GHz ■ High Associated Gain, 8.0 dB at 12 GHz ■ High MAG, > 8.5 dB at 12 GHz ■ 0.25 ,um Ti/Pt/Au Gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package
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AFM02N5-55,
AFM02N5-56
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
AFM02N5-55
AD004T2-00
AD004T2-11
AFM02N5-56
AK006R2-01
AK006R2-10
AS006M1-01
AS006M1-10
S443
92260
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AD004T2-00
Abstract: CVE7800-06 CVE7800-12 CVE7800-18 CVE7800-30 CVE7800-36 CVE7800-42 varactor high power 226 varactor
Text: GaAs Abrupt Varactor Diodes CVE7800 Series Features • Low Series Resistance - High Q ■ Low Capacitance Values for Applications at Millimeter W ave Frequencies ■ Available in Ceramic Packages with Low Parasitics and Also in Die Form Maximum Ratings Description
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CVE7800
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
AK006L1-00
AD004T2-00
CVE7800-06
CVE7800-12
CVE7800-18
CVE7800-30
CVE7800-36
CVE7800-42
varactor high power
226 varactor
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c1842
Abstract: SMC HF 270
Text: Ceramic Packaged Surface Mount PIN Diodes SMC1800 Series Features • Industry Standard Outline ■ Hermetically Sealed Ceramic Package ■ Non-Rollable Surface Mount Design ■ Full Face PIN diode Chip Bond ■ For High Performance Switches and Attenuators
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SMC1800
soR2-11
AS006L1-00
AS006L1--
AS006L1
AS006L2-00
AS006L2-01
AS006M1-00
AS006M1-01
AS006M1-10
c1842
SMC HF 270
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SPD3465
Abstract: SPD3510-XX SPD3510
Text: BÌAlphi Sampling Phase Detectors SPD3465, SPD3471, SPD3472 Series Features • Low Cost Design for Phase Lock ■ Rugged, Modular, Hybrid Construction ■ Phase Locks VCO and DROs up to 20 GHz ■ Wide Frequency Range ■ Available for Oscillator Signal Levels from
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SPD3465,
SPD3471,
SPD3472
rAS004M2-11
AS004R2-08
AS004R2-11
AS006L1-00
AS006L1--
AS006L2-00
SPD3465
SPD3510-XX
SPD3510
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Untitled
Abstract: No abstract text available
Text: Silicon Hyperabrupt Varactors for General Wide Band Applications EBAJphi CKV2020 Series exDKV6530 Series Features V H F to U H F Operation Guaranteed Minimum Q Values Octave Tuning from 3 to 20 Volts Linear Frequency vs Voltage Characteristics Maximum Ratings
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CKV2020
exDKV6530
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
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Untitled
Abstract: No abstract text available
Text: GaAs MIUIIC SPST FET Switch Low Loss Reflective DC-6 GHz EEQAIph AS006L1-01, AS006L1-10, AS004L1-08, AS004L1-11 Features • Broadband DC-6 GHz ■ Available in Gull Wing 7 and 8 Lead Surface Mount Packages ■ Reflective ■ Low Loss ■ 3 ns Rise/Fall Time
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AS006L1-01,
AS006L1-10,
AS004L1-08,
AS004L1-11
MIL-STD-883
AS004L1â
AS006L1-10
slighT002D8-31
AK006L1-01
AS004M2-11
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC FET 4 Bit Digital Attenuator With Driver 1,2,4,8 dB Bits DC-2 GHz EHAlph AK002D4-11 Features • Designed for Military and Commercial Applications ■ 8 Lead Metal Surface Mount Package ■ Low DC Current < 16 mA Total ■ Integral Driver +5V, -5V; CMOS & TTL*
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AK002D4-11
MIL-STD-883
AK002D4â
packagedT002D8-31
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC FET 4 Bit Digital Attenuator EHAlph 3 ,6 ,1 2 ,2 4 dB Bits DC-1 GHz AT001D6-31 Features • 3 ,6 , 12, 24 dB Bits ■ Designed for Military Applications ■ 14 Lead Metal Surface Mount Package ■ Low DC Power Consumption ■ Meets MIL-STD-883 Screening Requirements
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AT001D6-31
MIL-STD-883
AT001D6-31
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
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DSG6474
Abstract: Alpha Industries handling of beam lead diodes DSM6355 DSG6405 DSG6470-06 DSG6470-30 DSG6474-06 Design with PIN diode alpha
Text: Planar and Mesa Beam Lead PIN Diodes DSG64XX, DSM63XX Series Features Low Capacitance Low Resistance Fast Switching Oxide-Nitride Passivated Maximum Ratings Stronger, Full Frame Design Operating Temperature: High Voltage -6 5 to + 1 5 0 °C Storage Temperature:
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DSG64XX,
DSM63XX
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
DSG6474
Alpha Industries
handling of beam lead diodes
DSM6355
DSG6405
DSG6470-06
DSG6470-30
DSG6474-06
Design with PIN diode alpha
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AD004T2-00
Abstract: AD004T2-11 AE002M2-29 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10 AS349-12 AH002R2-11
Text: GaAs MMIC SPST FET Switch in 8 Lead SOIC Package Non-Reflective DC-2.5 GHz EBAlpha AS349-12 Features • S ingle Positive C ontrol ■ Input and O utput N o n -R e fle ctive ■ Low C ost Pin Out Description Pin 1 T he A S 34 9 is a S P S T M M IC sw itch, absorptive on
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AS349-12
AS349
Characte32
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
AK006L1-00
AS004M2-08
AD004T2-00
AD004T2-11
AE002M2-29
AK006R2-00
AK006R2-01
AK006R2-10
AS006M1-01
AS006M1-10
AH002R2-11
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AS103-59
Abstract: AD004T2-00 AD004T2-11 AE002M2-29 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10 S443
Text: GaAs MMIC Two Watt High Linearity Cellular SPDT Switch AS103-59 Features • High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control Voltages ■ Extremely Low Cost
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AS103-59
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
AK006L1-00
AS004M2-08
AD004T2-00
AD004T2-11
AE002M2-29
AK006R2-01
AK006R2-10
AS006M1-01
AS006M1-10
S443
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Untitled
Abstract: No abstract text available
Text: ALPHA IND / SEMICONDUCTOR MAE D • 0585443 DD03,2G1 DfiD ■ ALP Industry Standard PIN Diode Chips 'T -07-1 s' Features ■ ■ ■ ■ General Purpose PIN Switching Diodes Oxide/Nitride Passivated Series Resistance to 0.4 Ohms Switching Time to 5 ns Types
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CSB7151
CSB7152
CSB7156
CSB7152-01
CSB7156-01
056S443
DDQ12DE
CSB7152
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPDT Reflective Switch Dual Positive Control DC-2500 MHz EBAlpha AS373-12 Features • Low Loss <0.5 dB @ 900 MHz ■ Dual Positive Control Logic ■ Positive Voltage Operation (+3 to +5V) ■ Low DC Power Consumption ■ Extremely Low Cost ■
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DC-2500
AS373-12
AS373-12
D8-31
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC FET 2 Bit Digital Attenuator With Driver 16 and 32 dB Bit Values DC-2 GHz EBAlph AK002D2-24 Features • Designed for Commercial Applications ■ Surface Mount 14 Lead SOIC ■ Low DC Power Consumption ~ 20 mW Per Bit ■ Integral Driver +5V, -5V; CMOS and TTL
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AK002D2-24
AK002D4-24
AK002D2-24
D8-31
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPST FET Switch in 8 Lead SOIC Package Non-Reflective DC-2.5 GHz EBAlpha AS349-12 Features • S ingle Positive C ontrol ■ Input and O utput N o n -R e fle ctive ■ Low C ost Pin Out Description Pin 1 T he A S 34 9 is a S P S T M M IC sw itch, absorptive on
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AS349-12
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
AT002N5-10
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Untitled
Abstract: No abstract text available
Text: Ka-Band Power GaAs MESFET AFM04P2-00 Chip Layout Features • 21 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, DC-^0 GHz ■ 0.25 xm Ti/Pt/Au Gates ■ Passivated Surface
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AFM04P2-00
AFM04P2-00
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
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Untitled
Abstract: No abstract text available
Text: GaAs 15 dB MMIC FET Voltage Variable Attenuator DC-2 GHz AF002N2-12 Features • Single Voltage Control ■ Low Cost ■ 15 dB Range ■ Very Low DC Dissipation ■ Easily Adapted for Positive Control ■ Non-Reflective Description Absolute Maximum Ratings
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AF002N2-12
AF002N2-12
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
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AS373-12
Abstract: AD004T2-00 AD004T2-11 AE002M2-29 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10
Text: GaAs MMIC SPDT Reflective Switch Dual Positive Control DC-2500 MHz EBAlpha AS373-12 Features • Low Loss <0.5 dB @ 900 MHz ■ Dual Positive Control Logic ■ Positive Voltage Operation (+3 to +5V) ■ Low DC Power Consumption ■ Extremely Low Cost ■
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DC-2500
AS373-12
Typ32
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
AK006L1-00
AD004T2-00
AD004T2-11
AE002M2-29
AK006R2-00
AK006R2-01
AK006R2-10
AS006M1-01
AS006M1-10
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