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    052 MARKING ON SEMICONDUCTOR Search Results

    052 MARKING ON SEMICONDUCTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    052 MARKING ON SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BAS40

    Abstract: BAS40-04 BAS40-05 BAS40-06 43 MARKING
    Text: BAS40 thru BAS40-06 Vishay Semiconductors formerly General Semiconductor Schottky Diodes Features TO-236AB SOT-23 .122 (3.1) .110 (2.8) .016 (0.4) • These diodes feature very low turn-on voltage and fast switching. Top View • These devices are protected by a PN junction guard


    Original     		PDF BAS40 BAS40-06 O-236AB OT-23) OT-23 E8/10K 30K/box 8-May-02 BAS40-04 BAS40-05 BAS40-06 43 MARKING

    Untitled

    Abstract: No abstract text available
    Text: GSD2004S VISHAY Vishay Semiconductors Dual In-Series Small-Signal High-Voltage Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual in-series diode, especially suited for applications requiring high voltage capability 3 1 1


    Original     		PDF GSD2004S OT-23 O-236AB) GSD2004S GSD2004S-GS18 GSD2004S-GS08 D-74025 20-Nov-03

    BAS70

    Abstract: BAS70-04 BAS70-05 BAS70-06
    Text: BAS70 thru BAS70-06 Vishay Semiconductors formerly General Semiconductor Schottky Diodes Features TO-236AB SOT-23 • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as


    Original     		PDF BAS70 BAS70-06 O-236AB OT-23) OT-23 E8/10K 30K/box 10-May-02 BAS70-04 BAS70-05 BAS70-06

    Untitled

    Abstract: No abstract text available
    Text: GSD2004A VISHAY Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual common-anode diode, especially suited for applications requiring high voltage capability


    Original     		PDF GSD2004A OT-23 O-236AB) GSD2004A GSD2004A-GS18 GSD2004A-GS08 D-74025 18-Nov-03

    J174

    Abstract: j175 j177 Philips TO-92 MARKING CODE J176 j177 model J174 AMO J176 AMO 43 marking
    Text: Philips Semiconductors; J174; J175; J176; J177; P-channel silicon field-effect transistors Select your country Consumer Products Professional products Search Philips Semiconductors Home Product Information Information as of 2001-11-13 J174; J175; J176; J177; P-channel


    Original     		PDF rework/j174 J174 j175 j177 Philips TO-92 MARKING CODE J176 j177 model J174 AMO J176 AMO 43 marking

    BAT54 E9

    Abstract: marking l4 sot-23 BAT54 BAT54A BAT54C BAT54S
    Text: BAT54 thru BAT54S Vishay Semiconductor Schottky Diodes TO-236AB SOT-23 Features .122 (3.1) .110 (2.8) • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as


    Original     		PDF BAT54 BAT54S O-236AB OT-23) OT-23 E8/10K 30K/box 03-Jan-02 BAT54 E9 marking l4 sot-23 BAT54A BAT54C BAT54S

    88142

    Abstract: No abstract text available
    Text: BAT54 thru BAT54S Vishay Semiconductor Schottky Diodes Features TO-236AB SOT-23 • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.


    Original     		PDF BAT54 BAT54S O-236AB OT-23) OT-23 E8/10K 30K/box 30K/box 03-Jan-02 88142

    bav99 marking

    Abstract: Diode SOT-23 marking JE diode E8 package marking
    Text: BAL99, BAV99 Vishay Semiconductors formerly General Semiconductor Small-Signal Diodes TO-236AB SOT-23 Mounting Pad Layout .122 (3.1) .110 (2.8) 0.031 (0.8) .016 (0.4) Top View 3 .056 (1.43) .052 (1.33) 0.035 (0.9) 1 0.079 (2.0) 0.037 (0.95) 0.037 (0.95)


    Original     		PDF BAL99, BAV99 O-236AB OT-23) BAW56 150mA 14-May-02 bav99 marking Diode SOT-23 marking JE diode E8 package marking

    diode M5C

    Abstract: marking code m5c General Semiconductor m5c diode MMBD7000 marking m5c vishay MMBD7000 M5C
    Text: MMBD7000 Vishay Semiconductors New Product formerly General Semiconductor Dual Small-Signal Switching Diode TO-236AB SOT-23 Features .122 (3.1) .110 (2.8) .016 (0.4) • Silicon Epitaxial Planar Diode • Fast switching dual diode, especially suited for


    Original     		PDF MMBD7000 O-236AB OT-23) OT-23 O-236AB) E8/10K 30K/box 100mA 14-May-02 diode M5C marking code m5c General Semiconductor m5c diode MMBD7000 marking m5c vishay MMBD7000 M5C

    GSD2004S

    Abstract: diode E8 package marking
    Text: GSD2004S Vishay Semiconductors New Product formerly General Semiconductor Dual In-Series Small-Signal Switching Diode Mounting Pad Layout TO-236AB SOT-23 0.031 (0.8) .122 (3.1) .110 (2.8) 0.035 (0.9) .016 (0.4) Top View 3 .056 (1.43) .052 (1.33) 0.079 (2.0)


    Original     		PDF GSD2004S O-236AB OT-23) OT-23 O-236= 100mA 14-May-02 GSD2004S diode E8 package marking

    Diode marking CODE 1M

    Abstract: MMBTA13 MMBTA14 MPSA13 MPSA14
    Text: MMBTA13 and MMBTA14 Vishay Semiconductors New Product formerly General Semiconductor Darlington Transistors NPN Collector Base TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Emitter Top View .056 (1.43) .052 (1.33) 3 1 2 Mounting Pad Layout 0.031 (0.8)


    Original     		PDF MMBTA13 MMBTA14 O-236AB OT-23) MMBTA13 10-May-02 Diode marking CODE 1M MMBTA14 MPSA13 MPSA14

    2gm transistor

    Abstract: vishay TRANSISTOR Sot-23 MARKING CODE 2GM sot-23 transistor 2GM sot marking code 2GM marking 2GM marking codes sot-23 2GM 20FEB02
    Text: MMBTA56 Vishay Semiconductors formerly General Semiconductor Small Signal Transistor PNP TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration 1 = Base 2 = Emitter 3 = Collector


    Original     		PDF MMBTA56 O-236AB OT-23) MMBTA06 100mA 100mA, 100mA 100MHz 2gm transistor vishay TRANSISTOR Sot-23 MARKING CODE 2GM sot-23 transistor 2GM sot marking code 2GM marking 2GM marking codes sot-23 2GM 20FEB02

    2gm transistor

    Abstract: vishay TRANSISTOR Sot-23 MARKING CODE 2GM sot MPSA56 MMBTA06 MMBTA56 2GM sot-23 transistor 20FEB02
    Text: MMBTA56 Vishay Semiconductors formerly General Semiconductor Small Signal Transistor PNP TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration 1 = Base 2 = Emitter 3 = Collector


    Original     		PDF MMBTA56 O-236AB OT-23) MMBTA06 100mA, 100mA 100MHz 20-Feb-02 2gm transistor vishay TRANSISTOR Sot-23 MARKING CODE 2GM sot MPSA56 MMBTA06 MMBTA56 2GM sot-23 transistor 20FEB02

    tc 122 25 5

    Abstract: MMBD6050
    Text: MMBD6050 Vishay Semiconductors New Product formerly General Semiconductor Small-Signal Switching Diode Mounting Pad Layout 0.031 0.8 TO-236AB (SOT-23) .122 (3.1) .110 (2.8) 0.035 (0.9) .016 (0.4) Top View 0.079 (2.0) .056 (1.43) .052 (1.33) 3 1 Dimensions in inches


    Original     		PDF MMBD6050 O-236AB OT-23) OT-23, OT-23 100mA 14-May-02 tc 122 25 5 MMBD6050

    Vishay Diode BAS16

    Abstract: General Semiconductor diode marking 08 vishay semiconductor sot23 marking SOT 23 marking code a6 diode marking code A6 sot23 BAS16 SOT 23 A6 on marking CODE box SOT23 A6 SOT-23 BAS16 sot-23
    Text: BAS16 Vishay Semiconductors formerly General Semiconductor Small Signal Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode in case SOT-23, especially suited for automatic insertion. TO-236AB SOT-23 .122 (3.1) .110 (2.8) .016 (0.4)


    Original     		PDF BAS16 OT-23, O-236AB OT-23) OT-23 E8/10K 30K/box 14-May-02 Vishay Diode BAS16 General Semiconductor diode marking 08 vishay semiconductor sot23 marking SOT 23 marking code a6 diode marking code A6 sot23 BAS16 SOT 23 A6 on marking CODE box SOT23 A6 SOT-23 BAS16 sot-23

    1GM sot-23 transistor

    Abstract: vishay TRANSISTOR Sot-23 MARKING CODE 20FEB02
    Text: MMBTA06 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4) 0.079 (2.0) .045 (1.15) .037 (0.95)


    Original     		PDF MMBTA06 O-236AB OT-23) MMBTA56 100mA, 100mA 100MHz 20-Feb-02 1GM sot-23 transistor vishay TRANSISTOR Sot-23 MARKING CODE 20FEB02

    BAV70 SOT-23 JJ

    Abstract: sot23 code JJ Diode 1S 133 Marking code JJ
    Text: BAV70 Vishay Semiconductors formerly General Semiconductor Dual Small-Signal Diode TO-236AB SOT-23 Features .122 (3.1) .110 (2.8) .016 (0.4) • Silicon Epitaxial Planar Diode • Fast switching dual diode with common cathode • This diode is also available in other configurations


    Original     		PDF BAV70 O-236AB OT-23) BAV99, BAW56, BAL99. OT-23 E8/10K 30K/box 30K/boxCondition BAV70 SOT-23 JJ sot23 code JJ Diode 1S 133 Marking code JJ

    SOT-23 marking g23

    Abstract: g23 sot-23 transistor g23 marking code V MMBZ4625 Low Noise Zener Diode MMBZ4617 MMBZ4618 MMBZ4619 G18 SOT-23
    Text: MMBZ4617 thru MMBZ4627 Vishay Semiconductors New Product formerly General Semiconductor Zener Diodes VZ Range 2.4 to 6.2V Power Dissipation 350mW SOT-23 Top View .122 3.1 .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 1 .007 (0.175) .005 (0.125)


    Original     		PDF MMBZ4617 MMBZ4627 350mW OT-23 OT-23 MIL-STD-750, E8/10K MMBZ4621 MMBZ4622 MMBZ4623 SOT-23 marking g23 g23 sot-23 transistor g23 marking code V MMBZ4625 Low Noise Zener Diode MMBZ4618 MMBZ4619 G18 SOT-23

    88128

    Abstract: BAS31 MJ marking sot23 Diode Marking 016 general purpose diode marking code -08
    Text: BAS31 Vishay Semiconductors New Product formerly General Semiconductor Dual In-Series General-Purpose Controlled-Avalanche Diode Mounting Pad Layout TO-236AB SOT-23 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) Top View 0.035 (0.9) .056 (1.43) .052 (1.33)


    Original     		PDF BAS31 O-236AB OT-23) OT-23 O-236AB) 400mA 15-May-02 88128 BAS31 MJ marking sot23 Diode Marking 016 general purpose diode marking code -08

    mosfet low vgs

    Abstract: Marking code SS
    Text: BSS138 Vishay Semiconductors New Product formerly General Semiconductor N-Channel Enhancement-Mode MOSFET Low VGS th VDS 50V RDS(ON) 3.5Ω ID 220mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4)


    Original     		PDF BSS138 220mA O-236AB OT-23) OT-23 220mA 290mA, 440mA, mosfet low vgs Marking code SS

    1N4148 SOD-123

    Abstract: 1N4148 SOT-23 1N4148 MELF pad layout General Semiconductor melf diode marking vishay melf 1N4148W IMBD4148 LL4148
    Text: IMBD4148 Vishay Semiconductors formerly General Semiconductor Small-Signal Diode Mounting Pad Layout TO-236AB SOT-23 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) 0.035 (0.9) Top View .056 (1.43) .052 (1.33) 3 1 0.079 (2.0) 2 0.037 (0.95) .016 (0.4) .016 (0.4)


    Original     		PDF IMBD4148 O-236AB OT-23) OT-23, DO-35 14-May-02 1N4148 SOD-123 1N4148 SOT-23 1N4148 MELF pad layout General Semiconductor melf diode marking vishay melf 1N4148W IMBD4148 LL4148

    CMR1U-02M

    Abstract: CMR1U-06M
    Text: Central CMR1U-01M CMR1U-02M CMR1U-04M CMR1U-06M semiconductor Corp. FEATURES: ULTRA FAST RECOVERY RECTIFIER 1.0 AMP, 100 THRU 600 VOLTS • • • • • • SUPER MINIATURE CASE SPECIAL SELECTIONS AVAILABLE LOW COST SUPERIOR LOT TO LOT CONSISTENCY HIGH RELIABILITY


    OCR Scan     		PDF CMR1U-01M CMR1U-02M CMR1U-04M CMR1U-06M CMR1U-01M, CMR1U-02M) CMR1U-04M) CMR1U-06M) CMR1U-02M CMR1U-06M

    Untitled

    Abstract: No abstract text available
    Text: Central" CZR1-04 Semiconductor Corp. SURFACE MOUNT HIGH VOLTAGE SILICON RECTIFIER DESCRIPTION: The CENTRAL SEMICONDUCTOR CZR1-04 type is a Silicon General Purpose Rectifier designed for applications requiring high voltage capability. MARKING CODE: FULL PART NUMBER


    OCR Scan     		PDF CZR1-04 OT-223 CPD05 27-October OT-223

    CMSH1-20M

    Abstract: CMSH1-60M
    Text: # Central CMSH1-20M CMSH1-40M CMSH1-60M Semiconductor Corp. FEATURES: SCHOTTKY BARRIER RECTIFIER 1.0 AMP, 20 THRU 60 VOLTS • • • • SUPER MINIATURE CASE SUPERIOR LOT TO LOT CONSISTENCY LOW COST "C” BEND CONSTRUCTION PROVIDES STRAIN RELIEF WHEN MOUNTED ON


    OCR Scan     		PDF CMSH1-20M CMSH1-40M CMSH1-60M CMSH1-20M CMSH1-40M) CMSH1-60M) 100oC CMSH1-60M