SUD50NP04-77P
Abstract: TO-252-4L 74439 complementary MOSFET TO252
Text: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V
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SUD50NP04-77P
O-252-4L
SUD50NP04-77P-T4-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SUD50NP04-77P
TO-252-4L
74439
complementary MOSFET TO252
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TO-252AA Mechanical dimensions
Abstract: VS-50WQ04
Text: VS-50WQ04FN-M3 Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 1 Anode D-PAK TO-252AA • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition
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VS-50WQ04FN-M3
2002/95/EC
O-252AA)
J-STD-020,
VS-50WQ04FN-M3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
TO-252AA Mechanical dimensions
VS-50WQ04
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Q503
Abstract: No abstract text available
Text: VS-12CWQ03FNPbF Vishay Semiconductors Schottky Rectifier, 2 x 6 A FEATURES Base common cathode 4 • Popular D-PAK outline • Center tap configuration • Small foot print, surface mountable • Low forward voltage drop • High frequency operation 2 Common
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VS-12CWQ03FNPbF
O-252AA)
2002/95/EC
J-STD-020,
VS-12CWQ03FNPbF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
Q503
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Untitled
Abstract: No abstract text available
Text: VS-MURD620CTPbF Vishay Semiconductors Ultrafast Rectifier, 2 x 3 A FRED Pt FEATURES Base common cathode 4 • Ultrafast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature 2 Common cathode 1 3 Anode
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VS-MURD620CTPbF
O-252AA)
2002/95/EC
J-STD-020,
VS-MURD620CTPbF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: VS-12CWQ06FN-M3 Vishay Semiconductors Schottky Rectifier, 2 x 6 A FEATURES Base common cathode 4 • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition 2 Common
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VS-12CWQ06FN-M3
O-252AA)
J-STD-020,
2002/95/EC
VS-12CWQ06FN-M3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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4P4C
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR MATERIAL: PBT FLAMMABILITY RATING UL94-V0 COLOUR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD SHIELDING: BRONZE NI PLATED QUALITY CLASS: 500 MATING CYCLES A ENVIRONMENTAL
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UL94-V0
04-NOV-08
4P4C
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Untitled
Abstract: No abstract text available
Text: New Product VS-15EWX06FN-M3 Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES • Hyperfast recovery time, extremely low Qrr 2, 4 • 175 °C maximum operating junction temperature • For PFC CCM operation • Low forward voltage drop D-PAK TO-252AA
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VS-15EWX06FN-M3
J-STD-020,
2002/95/EC
O-252AA)
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: VS-12CWQ03FN-M3 Vishay Semiconductors Schottky Rectifier, 2 x 6 A FEATURES Base common cathode 4 • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition • Popular D-PAK outline
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VS-12CWQ03FN-M3
J-STD-020,
2002/95/EC
O-252AA)
VS-12CWQ03FN-M3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: VS-6CWH02FNPbF Vishay Semiconductors Ultrafast Rectifier, 2 x 3 A FRED Pt FEATURES Base common cathode 4 • Ultrafast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature 2 Common cathode 1 3 Anode
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VS-6CWH02FNPbF
O-252AA)
2002/95/EC
J-STD-020,
11-Mar-11
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4EWH02FN
Abstract: No abstract text available
Text: VS-4EWH02FN-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 4 A FRED Pt FEATURES • Hyperfast recovery time 2, 4 • 175 °C max. operating junction temperature • Output rectification freewheeling 1 N/C D-PAK TO-252AA • Low forward voltage drop reduced Qrr and soft
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VS-4EWH02FN-M3
2002/95/EC
J-STD-020,
O-252AA)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
4EWH02FN
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Untitled
Abstract: No abstract text available
Text: VS-12CWQ06FNPbF Vishay Semiconductors Schottky Rectifier, 2 x 6 A FEATURES Base common cathode 4 • Popular D-PAK outline • Center tap configuration • Small foot print, surface mountable • Low forward voltage drop 2 Common cathode 1 3 Anode Anode D-PAK TO-252AA
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VS-12CWQ06FNPbF
O-252AA)
2002/95/EC
J-STD-020,
VS-12CWQ06FNPbF
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product VS-8EWL06FN-M3 Vishay Semiconductors Ultralow VF Ultrafast Rectifier, 8 A FRED Pt FEATURES • Ultrafast recovery time, extremely low VF and soft recovery 2, 4 • 175 °C maximum operating junction temperature • For PFC DCM operation D-PAK TO-252AA
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VS-8EWL06FN-M3
2002/95/EC
J-STD-020,
O-252AA)
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product VS-8EWH06FN-M3 Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr and soft recovery 2, 4 • 175 °C maximum operating junction temperature • For PFC CRM/CCM operation D-PAK TO-252AA 1
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VS-8EWH06FN-M3
J-STD-020,
2002/95/EC
O-252AA)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VS-30WQ10FNPbF Vishay Semiconductors Schottky Rectifier, 3.5 A FEATURES Base cathode 4, 2 • Popular D-PAK outline • Small foot print, surface mountable • Low forward voltage drop 1 Anode D-PAK TO-252AA • High frequency operation 3 Anode • Guard ring for enhanced ruggedness and long term
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VS-30WQ10FNPbF
O-252AA)
2002/95/EC
J-STD-020,
VS-30WQ10FNPbF
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: VS-6CWQ04FN-M3 Vishay Semiconductors Schottky Rectifier, 2 x 3.5 A FEATURES Base common cathode 4 • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition 2 Common
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VS-6CWQ04FN-M3
O-252AA)
J-STD-020,
2002/95/EC
VS-6CWQ04FN-M3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: VS-MURD620CT-M3 Vishay Semiconductors Ultrafast Rectifier, 2 x 3 A FRED Pt FEATURES Base common cathode 4 • Ultrafast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature 2 Common cathode 1 3 Anode
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VS-MURD620CT-M3
O-252AA)
2002/95/EC
J-STD-020,
VS-MURD620CT-M3
11-Mar-11
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8EWF02S
Abstract: No abstract text available
Text: VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3 Vishay Semiconductors Surface Mountable Fast Soft Recovery Diode, 8 A FEATURES Base common cathode + 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC • Halogen-free according to IEC 61249-2-21
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VS-8EWF02S-M3,
VS-8EWF04S-M3,
VS-8EWF06S-M3
J-STD-020,
2002/95/EC
O-252AA)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
8EWF02S
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VS-8EWH02FN-M3
Abstract: No abstract text available
Text: VS-8EWH02FN-M3 Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES • Hyperfast recovery time 2, 4 • 175 °C max. operating junction temperature • Output rectification freewheeling 1 N/C D-PAK TO-252AA • Low forward voltage drop reduced Qrr and soft
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VS-8EWH02FN-M3
2002/95/EC
J-STD-020,
O-252AA)
11-Mar-11
VS-8EWH02FN-M3
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Untitled
Abstract: No abstract text available
Text: VS-12CWQ04FN-M3 Vishay Semiconductors Schottky Rectifier, 2 x 6 A FEATURES Base common cathode 4 • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition 2 Common
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VS-12CWQ04FN-M3
O-252AA)
J-STD-020,
2002/95/EC
VS-12CWQ04FN-M3
11-Mar-11
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VS-8EWS08
Abstract: No abstract text available
Text: VS-8EWS08S-M3, VS-8EWS12S-M3 High Voltage Series Vishay Semiconductors Surface Mountable Input Rectifier Diode, 8 A FEATURES Base cathode 4, 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC • Halogen-free according to IEC 61249-2-21
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VS-8EWS08S-M3,
VS-8EWS12S-M3
J-STD-020,
2002/95/EC
O-252AA)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
VS-8EWS08
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5EWH06FN
Abstract: No abstract text available
Text: New Product VS-5EWH06FN-M3 Vishay Semiconductors Hyperfast Rectifier, 5 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr and soft recovery 2, 4 • 175 °C maximum operating junction temperature • For PFC CRM/CCM operation D-PAK TO-252AA 1
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VS-5EWH06FN-M3
J-STD-020,
2002/95/EC
O-252AA)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
5EWH06FN
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Untitled
Abstract: No abstract text available
Text: VS-MBRD650CT-M3, VS-MBRD660CT-M3 Vishay Semiconductors Schottky Rectifier, 2 x 3 A FEATURES Base common cathode 4 2 Common cathode 1 3 Anode Anode D-PAK TO-252AA PRODUCT SUMMARY Package D-PAK (TO-252AA) IF(AV) 2x3A VR 50 V, 60 V VF at IF 0.65 V IRM 15 mA at 125 °C
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VS-MBRD650CT-M3,
VS-MBRD660CT-M3
J-STD-020,
2002/95/EC
O-252AA)
VS-MBRD66hay
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: 8EWS16SPbF High Voltage Series Vishay High Power Products Surface Mountable Input Rectifier Diode, 8 A DESCRIPTION/FEATURES Base cathode 4 D-PAK The 8EWS16SPbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation
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8EWS16SPbF
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product VS-6EWH06FN-E3 Vishay Semiconductors Ultralow VF Ultrafast Rectifier, 6 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr and soft recovery 2, 4 • 175 °C maximum operating junction temperature • For PFC CRM/CCM operation D-PAK TO-252AA
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VS-6EWH06FN-E3
J-STD-020,
2002/95/EC
O-252AA)
11-Mar-11
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