04N80C3
Abstract: SPA04N80C3 04N80C3* TO220 SPP04N80C3 P-TO-220-3-31 CTJ720 VDs-800V ID240
Text: SPP04N80C3 SPA04N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
|
Original
|
PDF
|
SPP04N80C3
SPA04N80C3
P-TO220-3-31
P-TO220-3-1
P-TO-220-3-31:
Q67040-S4433
04N80C3
04N80C3
SPA04N80C3
04N80C3* TO220
SPP04N80C3
P-TO-220-3-31
CTJ720
VDs-800V
ID240
|
04N80C3
Abstract: 04n80c kW10
Text: SPP04N80C3 SPA04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
|
Original
|
PDF
|
SPP04N80C3
SPA04N80C3
P-TO220-3-31
PG-TO220-3-31
PG-TO220-3-1
PG-TO-220-3-31:
SPA04N80C3
04N80C3
04N80C3
04n80c
kW10
|
04N80C3
Abstract: spp04n80c3
Text: SPP04N80C3 SPA04N80C3 Preliminary data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω 4 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31
|
Original
|
PDF
|
SPP04N80C3
SPA04N80C3
P-TO220-3-31
P-TO220-3-1
Q67040-S4433
04N80C3
|
04N80C3
Abstract: SPA04N80C3
Text: SPP04N80C3 SPA04N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
|
Original
|
PDF
|
SPP04N80C3
SPA04N80C3
P-TO220-3-31
P-TO-220-3-31:
P-TO220-3-1
Q67040-S4433
04N80C3
SPA04N80C3
|
Untitled
Abstract: No abstract text available
Text: SPP04N80C3 SPA04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances
|
Original
|
PDF
|
SPP04N80C3
SPA04N80C3
PG-TO220-3-31
PG-TO220
P-TO220-3-31
PG-TO-220-3-31:
Q67040-S4433
04N80C3
|
04N80C3
Abstract: 04N80C3* TO220 SPA04N80C3 SPP04N80C3 PG-TO220-3-31 SP000216300 04n80
Text: SPP04N80C3 SPA04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances
|
Original
|
PDF
|
SPP04N80C3
SPA04N80C3
PG-TO220-3-31
PG-TO220
P-TO220-3-31
PG-TO-220-3-31:
Q67040-S4433
04N80C3
04N80C3
04N80C3* TO220
SPA04N80C3
SPP04N80C3
SP000216300
04n80
|
04N80C3
Abstract: SPA04N80C3
Text: SPP04N80C3 SPA04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
|
Original
|
PDF
|
SPP04N80C3
SPA04N80C3
P-TO220-3-31
PG-TO220-3-31
PG-TO220-3-1
PG-TO-220-3-31:
SPA04N80C3
04N80C3
04N80C3
|
Untitled
Abstract: No abstract text available
Text: SPP04N80C3 SPA04N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω 4 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31
|
Original
|
PDF
|
SPP04N80C3
SPA04N80C3
P-TO220-3-31
P-TO220-3-1
Q67040-S4433
04N80C3
|