JESD97
Abstract: L100NH3LL STL100NH3LL
Text: STL100NH3LL N-channel 30V - 0.0032Ω - 25A - PowerFLAT 6x5 STripFET™ III Power MOSFET General features Type VDSS RDS(on) ID STL100NH3LL 30V <0.0035Ω 25A (1) 1. The value is rated according Rthj-pcb • Improved die-to-footprint ratio ■ Very low profile package (1mm max)
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STL100NH3LL
JESD97
L100NH3LL
STL100NH3LL
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Untitled
Abstract: No abstract text available
Text: STW9N150 N-channel 1500 V - 1.8 Ω - 8 A - TO-247 very high voltage PowerMESH Power MOSFET Features Type VDSS RDS on ID Pw STW9N150 1500 V < 2.5 Ω 8A 320 W • 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances
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STW9N150
O-247
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LVDS to MIPI DSI
Abstract: MIPI DSI to lvds mipi DSI LCD controller MDDI to MIPI datasheet ci 666 MIPI Specification MIPI DSI MIPI DSI lvds MIPI DSI Device Controller 4F2 diode
Text: DSILC6-4xx ESD Protection for high speed interface Main applications I/O3 VCC Where transient over-voltage protection in ESD sensitive equipment is required, such as: • ■ ■ ■ ■ I/O4 I/O2 GND I/O1 Computers Printers Communication systems Cell phone handsets and accessories
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OT-666
OT-666
LVDS to MIPI DSI
MIPI DSI to lvds
mipi DSI LCD controller
MDDI to MIPI datasheet
ci 666
MIPI Specification
MIPI DSI
MIPI DSI lvds
MIPI DSI Device Controller
4F2 diode
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STL65N3LLH5
Abstract: No abstract text available
Text: STL65N3LLH5 N-channel 30 V, 0.0048 Ω, 19 A, PowerFLAT 5x6 STripFET™ V Power MOSFET Features Order code VDSS RDS on max ID STL65N3LLH5 30 V <0.0058 Ω 19 A (1) 1. The value is rated according Rthj-pcb 1 2 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)
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STL65N3LLH5
STL65N3LLH5
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Untitled
Abstract: No abstract text available
Text: DSILC6-4xx ESD Protection for high speed interface Main applications I/O3 VCC Where transient over-voltage protection in ESD sensitive equipment is required, such as: • ■ ■ ■ ■ I/O4 I/O2 GND I/O1 Computers Printers Communication systems Cell phone handsets and accessories
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OT-666
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zener B51
Abstract: Zener diode A01
Text: EVERLIGHT ELECTRONICS CO., LTD. Website : http://www.everlight.com Explanation of Top view 3020 white leds Material Type T:T Type N:N Type F:F Type Color Rank Bin Code Bin Code Group A0-A,A0-B,AO-CA0-D B5-1,B5-2,B5-3,B5-4 A B5-1~B5-4,A0-2, A0-B,A0-3,A0-4
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DSE-451-009
04-Jan-2007
zener B51
Zener diode A01
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9N150
Abstract: STW9N150 8A720 JESD97 9n15
Text: STW9N150 N-channel 1500 V - 1.8 Ω - 8 A - TO-247 very high voltage PowerMESH Power MOSFET Features Type VDSS RDS on ID Pw STW9N150 1500 V < 2.5 Ω 8A 320 W • 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances
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STW9N150
O-247
9N150
STW9N150
8A720
JESD97
9n15
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Untitled
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet 0603 Package Chip LED 0.4mm Height 19-217/T7D-CS2T2B2/3T Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow
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19-217/T7D-CS2T2B2/3T
SZDSE-197-T19
04-Jan-2007
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Untitled
Abstract: No abstract text available
Text: STL65N3LLH5 N-channel 30 V - 0.006 Ω - 17 A - PowerFLAT 6x5 STripFET™ V Power MOSFET Preliminary Data Features Type VDSS RDS(on) max ID STL65N3LLH5 30 V <0.0075 Ω 17 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark
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STL65N3LLH5
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dsilc6-4xx
Abstract: kv 21 fs 140 4F2 diode SMIA cell phone camera SMP75-8
Text: DSILC6-4xx ESD Protection for high speed interface Main applications I/O3 VCC Where transient over-voltage protection in ESD sensitive equipment is required, such as: • ■ ■ ■ ■ I/O4 I/O2 GND I/O1 Computers Printers Communication systems Cell phone handsets and accessories
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OT-666
dsilc6-4xx
kv 21 fs 140
4F2 diode
SMIA cell phone camera
SMP75-8
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Untitled
Abstract: No abstract text available
Text: STL65N3LLH5 N-channel 30 V - 0.0048 Ω - 19 A - PowerFLAT 6x5 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID STL65N3LLH5 30 V <0.0058 Ω 19 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)
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STL65N3LLH5
STL65N3LLH5
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Untitled
Abstract: No abstract text available
Text: STL100NH3LL N-channel 30 V - 0.0032 Ω - 25 A - PowerFLAT 6x5 STripFET™ III Power MOSFET Features Type RDS(on) max ID <0.0035 Ω 25A (1) VDSS ) s ( t c u d o ) r s ( P t c e t u e d l o o r Application s P b e O t e l ) Description o s ( s t b c u
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STL100NH3LL
STL100NH3LL
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JESD97
Abstract: L100NH3LL STL100NH3LL PowerFLAT
Text: STL100NH3LL N-channel 30 V - 0.0032 Ω - 25 A - PowerFLAT 6x5 STripFET™ III Power MOSFET Features Type VDSS RDS(on) max ID STL100NH3LL 30 V <0.0035 Ω 25A (1) 1. The value is rated according Rthj-pcb • Improved die-to-footprint ratio ■ Very low profile package (1 mm max)
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STL100NH3LL
JESD97
L100NH3LL
STL100NH3LL
PowerFLAT
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STL65N3LLH5
Abstract: JESD97
Text: STL65N3LLH5 N-channel 30 V, 0.0048 Ω, 19 A - PowerFLAT 6x5 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID STL65N3LLH5 30 V <0.0058 Ω 19 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)
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STL65N3LLH5
STL65N3LLH5
JESD97
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Untitled
Abstract: No abstract text available
Text: STL100NH3LL N-channel 30V - 0.0032Ω - 25A - PowerFLAT 6x5 STripFET™ III Power MOSFET Features Type VDSS RDS(on) (max) ID STL100NH3LL 30 V <0.0035 Ω 25A (1) 1. The value is rated according Rthj-pcb • Improved die-to-footprint ratio ■ Very low profile package (1 mm max)
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STL100NH3LL
STL100NH3LL
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Untitled
Abstract: No abstract text available
Text: THIS £L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC RESERVED. DIST REVI S IONS FT LTR DI HOUSI NG, OTY: I MATERIAL: THERMOPLASTIC, \ MAY BE COLOR-SEE DESCRIPTION DATE DWN REVISED
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O-06-013152
07JUN2006
04JAN2007
24AUG2001
24AUG200I
29JUL2004
AR2000
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