Untitled
Abstract: No abstract text available
Text: BAT46 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications. • This diode features very low turn-on volte2 age and fast switching. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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Original
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BAT46
OD-123
BAT46W
2002/95/EC
2002/96/EC
DO-35
BAT46
08-Apr-05
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PDF
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schottky diode sod-123 marking code L6
Abstract: No abstract text available
Text: BAT46W Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features very low turn-on volte3 age and fast switching. • This device is protected by a PN junction guard ring against excessive voltage, such as
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Original
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BAT46W
DO-35
BAT46
2002/95/EC
2002/96/EC
OD-123
BAT46W
08-Apr-05
schottky diode sod-123 marking code L6
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PDF
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M1000
Abstract: No abstract text available
Text: 32.0-46.0 GHz GaAs MMIC Balanced Mixer August 2005 - Rev 04-Aug-05 M1000 Features Chip Device Layout Fundamental Balanced Mixer 7.0 dB Conversion Loss +24 dBm Input Third Order Intercept 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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Original
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04-Aug-05
M1000
MIL-STD-883
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PDF
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Untitled
Abstract: No abstract text available
Text: MURS340 & MURS360 New Product Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 400 V, 600 V IFSM 125 A trr 50 ns VF 1.05 V Tj max. 175 °C DO-214AB (SMC) Features Mechanical Data •
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Original
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MURS340
MURS360
DO-214AB
J-STD-020C
J-STD-002B
JESD22-B102D
08-Apr-05
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PDF
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A15HB
Abstract: No abstract text available
Text: 592D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Low Profile, Conformal Coated, Maximum CV FEATURES • New robust 6.3 V ratings for battery operated wireless applications. • New extended range offerings. • 1.0 mm to 2.5 mm height. •
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Original
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EIA-481-1
535BAAC
04-Aug-05
A15HB
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PDF
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D1002
Abstract: mmic distributed amplifier 84-1LMI XD1002
Text: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier August 2005 - Rev 04-Aug-05 D1002 Features Chip Device Layout Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing
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Original
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04-Aug-05
D1002
MIL-STD-883
D1002
mmic distributed amplifier
84-1LMI
XD1002
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PDF
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SMC MARKING mj
Abstract: No abstract text available
Text: MURS340 & MURS360 New Product Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 400 V, 600 V IFSM 125 A trr 50 ns VF 1.05 V Tj max. 175 °C DO-214AB (SMC) Features Mechanical Data •
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Original
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MURS340
MURS360
DO-214AB
J-STD-020C
J-STD-002B
JESD22-B102D
04-Aug-05
SMC MARKING mj
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PDF
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at91m55800a33au
Abstract: BGA-176 weight AT91M55800A bms battery
Text: Features • Utilizes the ARM7TDMI ARM Thumb Processor Core • • • • • • • • • • • • • • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt
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Original
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32-bit
16-bit
8/16-bit
1745DS
04-Aug-05
at91m55800a33au
BGA-176 weight
AT91M55800A
bms battery
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PDF
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Untitled
Abstract: No abstract text available
Text: MURS120 Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 200 V IFSM 40 A trr 25 ns VF 0.71 V Tj max. 175 °C DO-214AA (SMB) Features Mechanical Data • • • • • • • Case: DO-214AA (SMB)
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Original
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MURS120
DO-214AA
J-STD-020C
J-STD-002B
JESD22-B102D
04-Aug-05
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PDF
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30MPA0562
Abstract: 84-1LMI ka-band transistor
Text: 28.0-31.0 GHz GaAs MMIC Power Amplifier August 2005 - Rev 04-Aug-05 30MPA0562 Features Chip Device Layout tio n Ka-Band 1 W Power Amplifier 27.0 dB Small Signal Gain +30.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883
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Original
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04-Aug-05
30MPA0562
MIL-STD-883
30MPA0562
84-1LMI
ka-band transistor
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PDF
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d560r
Abstract: No abstract text available
Text: 595D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT Conformal Coated, Maximum CV FEATURES • New extended range offerings. • Large capacitance rating range. • Terminations: Tin 2 standard. • 8 mm, 12 mm tape and reel packaging available per EIA
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Original
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535BAAC
CECC30801
04-Aug-05
d560r
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PDF
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2.4 ghz transmitter
Abstract: usb pre amplifier circuit diagram 2.4 ghz transmitter rf test RF Transistor Selection 26TX0555 84-1LMI
Text: 18.0-36.0 GHz GaAs MMIC Transmitter August 2005 - Rev 04-Aug-05 Features Chip Device Layout tio n Sub-harmonic Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +25.0 dBm Output Third Order Intercept OIP3 35.0 dB Gain Control 2.0 dBm LO Drive Level
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Original
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04-Aug-05
MIL-STD-883
2.4 ghz transmitter
usb pre amplifier circuit diagram
2.4 ghz transmitter rf test
RF Transistor Selection
26TX0555
84-1LMI
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PDF
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murs120 MD
Abstract: No abstract text available
Text: MURS120 Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 200 V IFSM 40 A trr 25 ns VF 0.71 V Tj max. 175 °C DO-214AA (SMB) Features Mechanical Data • • • • • • • Case: DO-214AA (SMB)
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Original
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MURS120
DO-214AA
J-STD-020C
J-STD-002B
JESD22-B102D
08-Apr-05
murs120 MD
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PDF
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L1003
Abstract: ALH369
Text: 24.0-40.0 GHz GaAs MMIC Low Noise Amplifier L1003 August 2005 - Rev 04-Aug-05 Features Chip Device Layout Balanced Output Stage Excellent Input/Output Match Self-biased Architecture 24.0 dB Small Signal Gain 1.7 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing
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Original
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04-Aug-05
L1003
MIL-STD-883
ALH369
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PDF
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38MPA0547
Abstract: No abstract text available
Text: 35.0-45.0 GHz GaAs MMIC Power Amplifier 38MPA0547 August 2005 - Rev 04-Aug-05 Features Chip Device Layout tio n Excellent Transmit Output Stage Output Power Adjust 23.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing
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Original
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04-Aug-05
38MPA0547
MIL-STD-883
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PDF
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Untitled
Abstract: No abstract text available
Text: BAT46W Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features very low turn-on volte3 age and fast switching. • This device is protected by a PN junction guard ring against excessive voltage, such as
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Original
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BAT46W
DO-35
BAT46
2002/95/EC
2002/96/EC
OD-123
BAT46W
D-74025
04-Aug-05
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PDF
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Untitled
Abstract: No abstract text available
Text: BAT46 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications. • This diode features very low turn-on volte2 age and fast switching. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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Original
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BAT46
OD-123
BAT46W
2002/95/EC
2002/96/EC
DO-35
BAT46
D-74025
04-Aug-05
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PDF
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Untitled
Abstract: No abstract text available
Text: T H IS DRAW ING IS U N P U B L IS H E D . COPYRIGHT 2005 RELEASED FO R PU BLICATIO N AUG ,2 0 0 5 - BY TYCO ELECTRON ICS CORPORATION. J R E V IS IO N S LOC A L L R IG H T S R E S E R V E D . LTR 1.27 1 1 U I U U ÌU h± ± ^ ' U DATE RELEASED APVD DWN 04AUG05
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OCR Scan
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04AUG05
I11UIUUÃ
UL94V-0)
31MAR2000
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION ALL INTERNATIONAL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. LOG DIST p J R E V IS IO N S AS LTR F DESCRIPTION ECR —08 —028597 REVISED DATE DWN APVD 14N0V08 SF KB D D LOGO MARK
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OCR Scan
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14N0V08
A11-----------J
04AUG05
04AUG05
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. + + + + + + + + + + + + + + + + + -f + + + + + +
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OCR Scan
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31MAR2000
15DEC05
0S12-0302-05
04AUG05
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PDF
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