63 ball Vfbga thermal resistance
Abstract: No abstract text available
Text: IMPORTANT NOTICE Dear customer, As from February 2nd 2009, ST and Ericsson have merged Ericsson Mobile Platforms and ST-NXP Wireless into a 50/50 joint venture "ST‐Ericsson". As a result, the following changes are applicable to the attached
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JESD97
Abstract: STL100NHS3LL
Text: STL100NHS3LL N-channel 30V - 0.0032Ω - 22A - PowerFLAT 6x5 STripFET™ Power MOSFET plus monolithic Schottky Preliminary Data Features Type VDSS RDS(on) ID STL100NHS3LL 30V < 0.0042Ω 22A(1) 1. This value is rated according to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V
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STL100NHS3LL
JESD97
STL100NHS3LL
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bluetooth Keyboard Mouse
Abstract: CAN4311 CAN4311* antenna yageo bluetooth antenna GS-BT2416C2 SO 42 P
Text: GS-BT2416C2.AT1 Bluetooth class 2 module with embedded SPP SW Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Bluetooth specification V.1.2 compliant Transmission rate up to 721 Kbps Output power class 2 0 dBm typical Working distance up to 10 meters
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GS-BT2416C2
64Kbytes
bluetooth Keyboard Mouse
CAN4311
CAN4311* antenna
yageo bluetooth antenna
SO 42 P
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marking BS SOT23
Abstract: 2N7000 circuits
Text: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 ) s ( ct 2 1 • Low Qg ■ Low threshold drive SOT23-3L Application
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2N7000
2N7002
OT23-3L,
OT23-3L
marking BS SOT23
2N7000 circuits
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p22nf03l
Abstract: P22NF03 P22NF0 MOSFET MARKING ST
Text: STP22NF03L N-channel 30V - 0.0038Ω - 22A - TO-220 STripFET II Power MOSFET Features Type VDSS RDS on ID STP22NF03L 30V <0.05Ω 22A • Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Application oriented characterization ■ 100% avalanche tested
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STP22NF03L
O-220
O-220
P22NF03Lerein
p22nf03l
P22NF03
P22NF0
MOSFET MARKING ST
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Untitled
Abstract: No abstract text available
Text: STK850 N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK850 30V <0.0029Ω 71nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested
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STK850
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: high performance low power computing Oak 4-20 4-20mA Current Sensor including galvanic Isolation and 24V power supply Datasheet The picture is slightly different from the original Oak 4-20 device Revision history Date Doc. Rev. Changes 21-Jun-2011 Rev. 1.5
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4-20mA
21-Jun-2011
29-Oct-2010
30-Sep-2010
24-Mar-2010
28-Feb-2008
03-Sep-2007
21-May-2007
2002/95/EC:
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P22NF03
Abstract: p22nf03l STP22NF03L JESD97 p22n
Text: STP22NF03L N-channel 30 V, 0.0038 Ω, 22 A, TO-220 STripFET II Power MOSFET Features Type VDSS RDS on max ID STP22NF03L 30 V < 0.05 Ω 22 A • Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Application oriented characterization ■ 100% avalanche tested
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STP22NF03L
O-220
P22NF03
p22nf03l
STP22NF03L
JESD97
p22n
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K822
Abstract: JESD97 STK822
Text: STK822 N-channel 25 V - 0.00175 Ω - 38 A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on max RDS(on)*Qg PTOT STK822 25 V <0.00215 Ω 58 nC*mΩ 5.2 W • Ultra low top and bottom junction to case thermal resistance ■ Very low on resistance
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STK822
2002/95/EC
K822
JESD97
STK822
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bluetooth Keyboard Mouse
Abstract: CAN4311 CAN4311* antenna yageo bluetooth antenna GS-BT2416C2 antenna Yageo
Text: GS-BT2416C2.AT1 Bluetooth class 2 module with embedded SPP SW Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Bluetooth specification V.1.2 compliant Transmission rate up to 721 Kbps Output power class 2 0 dBm typical Working distance up to 10 meters
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GS-BT2416C2
64Kbytes
bluetooth Keyboard Mouse
CAN4311
CAN4311* antenna
yageo bluetooth antenna
antenna Yageo
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JESD97
Abstract: K800 STK800
Text: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested
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STK800
2002/95/EC
JESD97
K800
STK800
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bluetooth Keyboard Mouse
Abstract: yageo bluetooth antenna CAN4311 USB joystick HID CAN4311* antenna wireless keyboard bluetooth GS-BT2416C1 ANCV
Text: GS-BT2416C1.AT1 Bluetooth class 1 module with embedded SPP SW Features • Bluetooth® specification V.1.2 compliant ■ Transmission rate up to 721 Kbps ■ Output power class 1 20 dBm max ■ Working distance up to 100 meters ■ ACL and SCO links ■
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GS-BT2416C1
bluetooth Keyboard Mouse
yageo bluetooth antenna
CAN4311
USB joystick HID
CAN4311* antenna
wireless keyboard bluetooth
ANCV
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ST2N
Abstract: 2N7002 2N7000 ST2N transistor 2n7000 equivalents 2n7000 equivalent 2N7002 MARKING DSS SOT23 2N7000G JESD97
Text: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application
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2N7000
2N7002
OT23-3L,
OT23-3L
ST2N
2N7002
2N7000
ST2N transistor
2n7000 equivalents
2n7000 equivalent
2N7002 MARKING
DSS SOT23
2N7000G
JESD97
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Untitled
Abstract: No abstract text available
Text: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET Features Type RDS on VDSS RDS(on)*Qg PTOT ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b Application e O t e l ) o s ( s t Description b c u O d o ) r s P ( t c e t u e l d
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STK800
2002/95/EC
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antenova 30-30-A5839-01
Abstract: No abstract text available
Text: GS-BT2416C1.AT1 Bluetooth class 1 module with embedded SPP SW Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Bluetooth specification V.1.2 compliant Transmission rate up to 721 Kbps Output power class 1 20 dBm max Working distance up to 100 meters
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GS-BT2416C1
64Kbytes
100erein
antenova 30-30-A5839-01
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ST T4 1060
Abstract: K822 Transistor k822
Text: STK822 N-channel 25V - 0.0015Ω - 38A - PolarPAK STripFET Power MOSFET Preliminary Data Features Type VDSS RDS on RDS(on)*Qg PTOT STK822 25V <0.002Ω 90nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low on resistance
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STK822
2002/95/EC
ST T4 1060
K822
Transistor k822
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bluetooth Keyboard Mouse
Abstract: CAN4311 CAN4311* antenna yageo bluetooth antenna GS-BT2416C1 CAN43111 motherboard chip repairing
Text: GS-BT2416C1.AT1 Bluetooth class 1 module with embedded SPP SW Features • Bluetooth® specification V.1.2 compliant ■ Transmission rate up to 721 Kbps ■ Output power class 1 20 dBm max ■ Working distance up to 100 meters ■ ACL and SCO links ■
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GS-BT2416C1
bluetooth Keyboard Mouse
CAN4311
CAN4311* antenna
yageo bluetooth antenna
CAN43111
motherboard chip repairing
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ST2N
Abstract: 2n7000 equivalents 2N7002 2n7000 2N7002 MARKING 2N7000G JESD97
Text: 2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET Features Type VDSS RDS on ID 2N7000 60V <5Ω (@10V) 0.35 2N7002 60V <5Ω (@10V) 0.20 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application ■ Switching applications
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2N7000
2N7002
OT23-3L
OT23-3L
ST2N
2n7000 equivalents
2N7002
2n7000
2N7002 MARKING
2N7000G
JESD97
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stk8001
Abstract: JESD97 K800 STK800
Text: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested
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STK800
2002/95/EC
stk8001
JESD97
K800
STK800
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JESD97
Abstract: K850 STK850
Text: STK850 N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK850 30V <0.0029Ω 71nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested
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STK850
2002/95/EC
JESD97
K850
STK850
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90 ball VFBGA
Abstract: EMIF06 MCDAT31DIR VFBGA package tray DRFM
Text: 34 .80 7IRELESS IMPORTANT NOTICE Dear customer, As from August 2nd 2008, the wireless operations of STMicroelectronics have moved to a new company, ST-NXP Wireless. As a result, the following changes are applicable to the attached document. ● Company name - STMicroelectronics NV is replaced with ST-NXP Wireless.
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k822
Abstract: No abstract text available
Text: STK822 N-channel 25 V - 0.00175 Ω - 38 A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on max RDS(on)*Qg PTOT STK822 25 V <0.00215 Ω 58 nC*mΩ 5.2 W • Ultra low top and bottom junction to case thermal resistance ■ Very low on resistance
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STK822
2002/95/EC
k822
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Untitled
Abstract: No abstract text available
Text: STK820 N-channel 25V - 0.005Ω - 21A - PolarPAK STripFET Power MOSFET Preliminary Data Features Type VDSS RDS on RDS(on)*Qg PTOT STK820 25V <0.0065Ω 90nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances
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STK820
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested
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STK800
2002/95/EC
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