Untitled
Abstract: No abstract text available
Text: STL40DN3LLH5 Dual N-channel 30 V, 0.016 Ω typ., 11 A STripFET V Power MOSFET in a PowerFLAT™ 5x6 double island Datasheet — production data Features Order code VDSS RDS on max. ID STL40DN3LLH5 30 V < 0.018 Ω 11 A (1) 1. The value is rated according Rthj-pcb
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STL40DN3LLH5
STL40DN3LLH5
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Untitled
Abstract: No abstract text available
Text: STGW40H120DF2 1200 V, 40 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 40 A • 5 s minimum short circuit withstand time at
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STGW40H120DF2
O-247
DocID023753
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STGW40H120DF2
Abstract: STGW40H120 GW40H120DF2
Text: STGW40H120DF2 1200 V, 40 A high speed trench gate field-stop IGBT Datasheet − preliminary data Features • Maximum junction temperature : TJ = 175 °C ■ High speed switching ■ Minimized tail current ■ Low saturation voltage: VCE sat = 2.1 V (typ.)
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STGW40H120DF2
O-247
STGW40H120DF2
STGW40H120
GW40H120DF2
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STGP20H60DF
Abstract: STGB20H60DF
Text: STGB20H60DF STGP20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet − preliminary data Features • High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time
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STGB20H60DF
STGP20H60DF
O-220
STGP20H60DF
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IFP260
Abstract: STGW30H60DF GP30H STGB30H60DF STGF3
Text: STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB • High speed switching • Tight parameters distribution 3 1 3 1 D²PAK 2 • Safe paralleling • Low thermal resistance
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STGB30H60DF,
STGF30H60DF,
STGP30H60DF,
STGW30H60DF
O-220FP
O-220
O-247
DocID022363
IFP260
STGW30H60DF
GP30H
STGB30H60DF
STGF3
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Untitled
Abstract: No abstract text available
Text: STGW15H120DF2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 15 A
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STGW15H120DF2
O-247
DocID023751
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RAD SMD MARKING CODE
Abstract: smd diode marking code TO3
Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications
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STRH40N6
STRH40N6S1
DocID18351
RAD SMD MARKING CODE
smd diode marking code TO3
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STGW40H120DF2
Abstract: No abstract text available
Text: STGW40H120DF2 Trench gate field-stop IGBT, H series 1200 V, 40 A high speed Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 40 A
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STGW40H120DF2
O-247
DocID023753
STGW40H120DF2
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Untitled
Abstract: No abstract text available
Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications
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STRH40N6
STRH40N6S1
STRH40N6SG
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SPC563M64L5
Abstract: SPC563M64L7 BOSCH 227 100 142 sck 20150
Text: SPC563M64L5, SPC563M64L7 SPC563M60L5P, SPC563M60L7P 32-bit Power Architecture based MCU for automotive powertrain applications Datasheet − production data Features • 144 LQFP 20 mm x 20 mm Single issue, 32-bit Power Architecture® Book E compliant e200z335 CPU core complex
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SPC563M64L5,
SPC563M64L7
SPC563M60L5P,
SPC563M60L7P
32-bit
e200z335
32-channel
SPC563M64L5
BOSCH 227 100 142
sck 20150
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l3gd20
Abstract: mems gyro automotive kalman gyro applications of arm processor mems gyroscope cortex-m3 processor
Text: STEVAL-MKI127V1 Ultra stable 3-axis gyro based on the L3GD20 Data brief Features • USB / PC connection for setup and upgrade USB and/or UART connection ■ Ultra stable over temperature and time ■ Operational temperature: -30 °C to +85 °C ■ ST L3GD20 MEMS rate sensor
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STEVAL-MKI127V1
L3GD20
L3GD20
mems gyro automotive
kalman gyro
applications of arm processor
mems gyroscope
cortex-m3 processor
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Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 20 LOC GP ALL RIGHTS RESERVED. BY - REVISIONS DIST 00 P LTR A DESCRIPTION DATE RELEASED PER ECO-13-005370 DWN APVD CJV 01APR2013 MRS D D 5 C C 2 3 B B 1 1 2227288-1 HEATSINK ASSEMBLY
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ECO-13-005370
01APR2013
5M-2009
03OCT2012
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Untitled
Abstract: No abstract text available
Text: STL40DN3LLH5 Dual N-channel 30 V, 0.016 Ω typ., 11 A STripFET V Power MOSFET in a PowerFLAT™ 5x6 double island Datasheet — production data Features Order code VDSS RDS on max. ID STL40DN3LLH5 30 V < 0.018 Ω 11 A (1) 1. The value is rated according Rthj-pcb
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STL40DN3LLH5
STL40DN3LLH5
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st smd diode marking to3
Abstract: 0301 smd STRH40N6SG
Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened SMD.5 Applications
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STRH40N6
STRH40N6S
st smd diode marking to3
0301 smd
STRH40N6SG
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Untitled
Abstract: No abstract text available
Text: M95320-A125 M95320-A145 Automotive 32-Kbit serial SPI bus EEPROMs with high-speed clock Datasheet - production data Features • Compatible with the Serial Peripheral Interface SPI bus SO8 (MN) 150 mil width TSSOP8 (DW) 169 mil width WFDFPN8 (MF) 2 x 3 mm
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M95320-A125
M95320-A145
32-Kbit
DocID022938
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Untitled
Abstract: No abstract text available
Text: VN7040AS-E VN7040AJ-E High-side driver with MultiSense analog feedback for automotive application Datasheet - production data 62 "1($'5 – Configurable latch-off on overtemperature or power limitation with dedicated fault reset pin – Loss of ground and loss of VCC
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VN7040AS-E
VN7040AJ-E
DocID022406
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ICE40 FPGA
Abstract: ICE40LP1K-CM121 ICE40LP1K ice40lp 225ba ICE40LP1K-CM36 ICE40
Text: iCE40 LP Series Ultra Low-Power FPGA Family October 03, 2012 1.32 Figure 1: iCE40 LP-Series Family Architectural Features LP-Series - optimized for low power Ultra-small footprints Proven, high-volume 40 nm, low-power CMOS technology I/O Bank 0 I/O Bank 1
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iCE40TM
iCE65
iCE40
5-MAR-2012
13-FEB-2012
15-DEC-2011
31-OCT-2011
11-JUL-2011
03-OCT-2012)
ICE40 FPGA
ICE40LP1K-CM121
ICE40LP1K
ice40lp
225ba
ICE40LP1K-CM36
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GF20H60DF
Abstract: STGF20H60DF GP20H
Text: STGB20H60DF, STGF20H60DF, STGP20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB • High speed switching • Tight parameters distribution 3 1 3 2 1 TO-220 2 TO-220FP • Safe paralleling • Low thermal resistance
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STGB20H60DF,
STGF20H60DF,
STGP20H60DF
O-220
O-220FP
DocID023740
GF20H60DF
STGF20H60DF
GP20H
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Untitled
Abstract: No abstract text available
Text: STGW15H120DF2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 15 A
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STGW15H120DF2
O-247
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STGB20H60DF
Abstract: GF20H60DF STGF20H60DF
Text: STGB20H60DF, STGF20H60DF, STGP20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB • High speed switching • Tight parameters distribution 3 1 3 2 1 TO-220 2 TO-220FP • Safe paralleling • Low thermal resistance
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STGB20H60DF,
STGF20H60DF,
STGP20H60DF
O-220
O-220FP
DocID023740
STGB20H60DF
GF20H60DF
STGF20H60DF
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Untitled
Abstract: No abstract text available
Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications
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STRH40N6
STRH40N6S1
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STGP30H60DF
Abstract: GP30H60DF STGB30H60DF
Text: STGB30H60DF STGP30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet − preliminary data Features • High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time
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STGB30H60DF
STGP30H60DF
O-220
STGP30H60DF
GP30H60DF
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GW25
Abstract: STGW25H120DF2
Text: STGW25H120DF2 1200 V, 25 A high speed trench gate field-stop IGBT Datasheet − preliminary data Features • Maximum junction temperature : TJ = 175 °C ■ High speed switching ■ Minimized tail current ■ Low saturation voltage: VCE sat = 2.1 V (typ.)
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STGW25H120DF2
O-247
GW25
STGW25H120DF2
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st marking
Abstract: STGW15H120DF2 GW15H120DF2
Text: STGW15H120DF2 1200 V, 15 A high speed trench gate field-stop IGBT Datasheet − preliminary data Features • Maximum junction temperature : TJ = 175 °C ■ High speed switching ■ Minimized tail current ■ Low saturation voltage: VCE sat = 2.1 V (typ.)
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STGW15H120DF2
O-247
st marking
STGW15H120DF2
GW15H120DF2
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