114-18063-122
Abstract: 114-18063-1 114-18063-12 114-18025 114-18063 mqs pin PA66 - GF 35
Text: 4 RELEASED FOR PUBLICATION 20 20 LOC BY - 12.4 P 0.4 LTR DESCRIPTION A3 A4 C C1 C2 DWN APVD RELEASED FOR PRODUCTION -1 ET00-0002-03 03FEB2003 P.Z. R.M. UPDATED GRAPHIC DRAWING (ECR-06-007324) 14DEC2005 P.Z. O.C. 03OCT2006 M.G. R.M. 19DEC2007 D.B. A.G. CHANGED DWG. REVISION ACCORDING TO PART
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ET00-0002-03)
03FEB2003
ECR-06-007324)
14DEC2005
03OCT2006
19DEC2007
ECR-07-025394
ECR-11-001021
ECR-13-014319)
17JAN2011
114-18063-122
114-18063-1
114-18063-12
114-18025
114-18063
mqs pin
PA66 - GF 35
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P130NS04ZB
Abstract: B130NS04ZB JESD97 STB130NS04ZB STB130NS04ZB-1 STB130NS04ZBT4 STP130NS04ZB STW130NS04ZB MOSFET IGSS 100uA STW13
Text: STP130NS04ZB - STB130NS04ZB-1 STB130NS04ZB - STW130NS04ZB N-channel clamped - 7 mΩ - 80A TO-220/I2/D2PAK/TO-247 Fully protected mesh overlay MOSFET General features Type VDSS RDS on ID STP130NS04ZB clamped <9 mΩ 80A STB130NS04ZB clamped <9 mΩ 80A
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STP130NS04ZB
STB130NS04ZB-1
STB130NS04ZB
STW130NS04ZB
O-220/I2/D2PAK/TO-247
STP130NS04ZB
STB130NS04ZB
O-247
P130NS04ZB
B130NS04ZB
JESD97
STB130NS04ZB-1
STB130NS04ZBT4
STW130NS04ZB
MOSFET IGSS 100uA
STW13
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Untitled
Abstract: No abstract text available
Text: TDE1707DFT Intelligent power switch Features • 0.5A output current ■ Low side or high side switch configuration ■ 6V to 48V supply voltage range ■ Overload and short circuit protections ■ Internal voltage clamping ■ Supply and output reversal protection
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TDE1707DFT
TDE1707DFT
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AN495
Abstract: JESD97 TDE1707 TDE1707DFT
Text: TDE1707DFT Intelligent power switch Features • 0.5A output current ■ Low side or high side switch configuration ■ 6V to 48V supply voltage range ■ Overload and short circuit protections ■ Internal voltage clamping ■ Supply and output reversal protection
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TDE1707DFT
TDE1707DFT
AN495
JESD97
TDE1707
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Untitled
Abstract: No abstract text available
Text: STG4259 Low voltage 0.3Ω max dual SPDT switch with break-before-make feature and 10KV contact ESD protection Features • Wide operating voltage range: VCC Opr = 1.65V to 4.8V ■ Low power dissipation: ICC = 0.2µA (Max) at TA = 85°C ■ Low "ON" resistance VIN = 0V:
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STG4259
Flip-Chip11
100mA
IEC-61000-4-2
STG4259BJR
STG4259
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AN1235
Abstract: AN1751 EMIF01-SMIC01F2 JESD97
Text: EMIF01-SMIC01F2 Single line IPAD , EMI filter including ESD protection Features • High density capacitor ■ 1 line low-pass-filter ■ Lead-free package ■ High efficiency in EMI filtering ■ Very low PCB space consumtion ■ Very thin package: 0.65 mm
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EMIF01-SMIC01F2
AN1235
AN1751
EMIF01-SMIC01F2
JESD97
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digital accelerometer MEMS 150 degc
Abstract: JESD97 LGA14 LIS302ALB LIS302ALBTR
Text: LIS302ALB MEMS motion sensor 3-axis - ±2g analog output "piccolo" accelerometer Features • 3.0V to 3.6V supply voltage ■ ~2mW power consumption ■ ±2g full-scale ■ 3 acceleration channels plus multiplexed analog output ■ Ratiometric output voltage
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LIS302ALB
10000g
LGA-14
digital accelerometer MEMS 150 degc
JESD97
LGA14
LIS302ALB
LIS302ALBTR
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6v inductive proximity sensor circuit diagram
Abstract: No abstract text available
Text: TDE1707DFT Intelligent power switch Features • 0.5A output current ■ Low side or high side switch configuration ■ 6V to 48V supply voltage range ■ Overload and short circuit protections ■ Internal voltage clamping ■ Supply and output reversal protection
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TDE1707DFT
AN495)
6v inductive proximity sensor circuit diagram
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JESD97
Abstract: LGA14 LIS302ALB LIS302ALBTR
Text: LIS302ALB MEMS motion sensor 3-axis - ±2g analog output "piccolo" accelerometer Features • 3.0V to 3.6V supply voltage ■ ~2mW power consumption ■ ±2g full-scale ■ 3 acceleration channels plus multiplexed analog output ■ Ratiometric output voltage
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LIS302ALB
10000g
LIS302ALB
JESD97
LGA14
LIS302ALBTR
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ESBT
Abstract: JESD97 STESB01 STESB01DR STESB01STR
Text: STESB01 ESBT Base Driver Feature summary • Controls ESBT base current in every line/load condition ■ Supply voltage range: 8V to 20 V ■ Storage time controlled by closed loop architecture from 150ns to 1.5µs ■ Under voltage lockout with hysteresis
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STESB01
150ns
OT23-6L
STESB01
ESBT
JESD97
STESB01DR
STESB01STR
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ESBT
Abstract: JESD97 STESB01 STESB01DR STESB01STR
Text: STESB01 ESBT Base Driver Feature summary • Controls ESBT base current in every line/load condition ■ Supply voltage range: 8V to 20 V ■ Storage time controlled by closed loop architecture from 150ns to 1.5µs ■ Under voltage lockout with hysteresis
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STESB01
150ns
OT23-6L
STESB01
ESBT
JESD97
STESB01DR
STESB01STR
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EMIF01-SMIC01F2
Abstract: STMicroelectronics marking code date AN1235 AN1751 JESD97
Text: EMIF01-SMIC01F2 IPAD Single line EMI filter including ESD protection Main application • Single ended microphone in mobile phones and portable devices Description Flip-Chip 8 Bumps The EMIF01-SMIC01F2 is a highly integrated device designed to suppress EMI/RFI noise for
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EMIF01-SMIC01F2
EMIF01-SMIC01F2
STMicroelectronics marking code date
AN1235
AN1751
JESD97
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Untitled
Abstract: No abstract text available
Text: STG4259 Low voltage 0.3Ω max dual SPDT switch with break-before-make feature and 10KV contact ESD protection Features • Wide operating voltage range: VCC Opr = 1.65V to 4.8V ■ Low power dissipation: ICC = 0.2µA (Max) at TA = 85°C ■ Low "ON" resistance VIN = 0V:
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STG4259
Flip-Chip11
100mA
IEC-61000-4-2
IEC-61000-4-and
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N951
Abstract: JESD97 STN951
Text: STN951 Low voltage fast-switching PNP power transistor Preliminary Data General features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Surface mounting device in medium power SOT-223 package
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STN951
OT-223
2002/93/EC
OT-223
N951
JESD97
STN951
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ST10F275
Abstract: source code for park and clark transformation park and clark transformation 3 phase to d-q transformation SVPWM svpwm basics svpwm inverter schematic 10 kw schematic induction heating DFOC LTS6-NP
Text: AN2388 Application note Sensor field oriented control IFOC of three-phase AC induction motors using ST10F276 Introduction AC Induction motors are the most widely used motors in industrial motion control systems, as well as in home appliances thanks to their reliability, robustness and simplicity of control.
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AN2388
ST10F276
ST10F275
source code for park and clark transformation
park and clark transformation
3 phase to d-q transformation
SVPWM
svpwm basics
svpwm inverter schematic
10 kw schematic induction heating
DFOC
LTS6-NP
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Untitled
Abstract: No abstract text available
Text: EMIF01-SMIC01F2 Single line IPAD , EMI filter including ESD protection Features • High density capacitor ■ 1 line low-pass-filter ■ Lead-free package ■ High efficiency in EMI filtering ■ Very low PCB space consumtion ■ Very thin package: 0.65 mm
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EMIF01-SMIC01F2
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Untitled
Abstract: No abstract text available
Text: STG4259 Low voltage 0.3Ω max dual SPDT switch with break-before-make feature and 15KV ESD protection Features • Wide operating voltage range: VCC Opr = 1.65 V to 4.8 V ■ Low power dissipation: ICC = 0.2 µA (max) at TA = 85°C ■ Low ON resistance VIN = 0V:
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STG4259
Flip-Chip11
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JESD97
Abstract: N951 STN951
Text: STN951 Low voltage fast-switching PNP power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Surface mounting device in medium power SOT-223 package 4 1 Applications 2 3
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STN951
OT-223
OT-223
JESD97
N951
STN951
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15KV
Abstract: A115-A C101 IEC-61000-4-2 JESD22 JESD97 STG4259 STG4259BJR
Text: STG4259 Low voltage 0.3Ω max dual SPDT switch with break-before-make feature and 15KV ESD protection Features • Wide operating voltage range: VCC Opr = 1.65 V to 4.8 V ■ Low power dissipation: ICC = 0.2 µA (max) at TA = 85°C ■ Low ON resistance VIN = 0V:
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STG4259
Flip-Chip11
IEC-61000-4-2
15KV
A115-A
C101
JESD22
JESD97
STG4259
STG4259BJR
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Untitled
Abstract: No abstract text available
Text: STESB01 ESBT Base Driver Feature summary • Controls ESBT base current in every line/load condition ■ Supply voltage range: 8V to 20 V ■ Storage time controlled by closed loop architecture from 150ns to 1.5µs ■ Under voltage lockout with hysteresis
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STESB01
150ns
OT23-6L
STESB01
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STMicroelectronics DIODE marking code
Abstract: 15KV A115-A C101 IEC-61000-4-2 JESD22 JESD97 STG4259 STG4259BJR
Text: STG4259 Low voltage 0.3Ω max dual SPDT switch with break-before-make feature and 15KV ESD protection Features • Wide operating voltage range: VCC Opr = 1.65 V to 4.8 V ■ Low power dissipation: ICC = 0.2 µA (max) at TA = 85°C ■ Low ON resistance VIN = 0V:
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STG4259
Flip-Chip11
IEC-61000-4-2
STMicroelectronics DIODE marking code
15KV
A115-A
C101
JESD22
JESD97
STG4259
STG4259BJR
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Untitled
Abstract: No abstract text available
Text: STN951 Low voltage fast-switching PNP power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Surface mounting device in medium power SOT-223 package 4 3 1 Applications 2
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STN951
OT-223
OT-223
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B130NS04ZB
Abstract: STB130NS04ZBT4 STP130NS04ZB P130NS04ZB JESD97 STB130NS04ZB STB130NS04ZB-1 STW130NS04ZB P130NS0
Text: STP130NS04ZB - STB130NS04ZB-1 STB130NS04ZB - STW130NS04ZB N-channel clamped - 7 mΩ - 80A TO-220/I2/D2PAK/TO-247 Fully protected mesh overlay MOSFET General features Type VDSS RDS on ID STP130NS04ZB clamped <9 mΩ 80A STB130NS04ZB clamped <9 mΩ 80A
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STP130NS04ZB
STB130NS04ZB-1
STB130NS04ZB
STW130NS04ZB
O-220/I2/D2PAK/TO-247
STP130NS04ZB
STB130NS04ZB
O-247
B130NS04ZB
STB130NS04ZBT4
P130NS04ZB
JESD97
STB130NS04ZB-1
STW130NS04ZB
P130NS0
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