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Text: PRODUCT CATALO' N-CHANNEL ENHANCEMENT MOS FET 200A, o . o n n 1 0 0 V , SDF200NA10 HE FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE
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SDF200NA10
MIL-STD-883
03bflbG2
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Abstract: No abstract text available
Text: IM-CHANIUEL M O S FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . 021 " _ “ 0.533mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.
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533mm)
0254mm)
3N169,
3N170,
3N171
03bflbG2
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