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    Untitled

    Abstract: No abstract text available
    Text: STAC4932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz • Pulse conditions: 1 msec - 10%


    Original     		PDF STAC4932B 2002/95/EC STAC244B STAC4932B DocID17153

    STAC244

    Abstract: drying oven STAC265F M252 substitution AN3232 C10100 M252 STAC265B seho
    Text: AN3232 Application note Mounting recommendations for STAC boltdown packages Introduction RF power transistors are amongst the highest power density devices in the semiconductor industry. It is crucial to the reliability and performance of such devices to consider


    Original     		PDF AN3232 STAC244B STAC265B STAC244F STAC265F STAC244 drying oven M252 substitution AN3232 C10100 M252 seho

    MEC 1300

    Abstract: STAC4932 STAC4932B 1000WF
    Text: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions : 1 msec - 10% ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC4932B 2002/95/EC STAC244B STAC4932B MEC 1300 STAC4932 1000WF

    LE80536VC001512

    Abstract: MPGA479 ITP700
    Text: Intel Celeron® M Processor Datasheet June 2004 Order Number: 300302-003 IINFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN


    Original     		PDF 03-Aug-2010 LE80536VC001512 MPGA479 ITP700

    Untitled

    Abstract: No abstract text available
    Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P LTR A 1 D 2 HOUSING RECEPTACLE HOUSING C CONTACTS EMI SPRINGS EMI GASKET DESCRIPTION DATE RELEASED ECO-14-002997 DWN APVD LAW 24MAR2014 SB


    Original     		PDF ECO-14-002997 EIA/ECA-364-1000 5M-2009 03AUG2010

    6B bRIDGE Rectifier

    Abstract: E231047
    Text: GBU6A ~ GBU6M 50 V ~ 1000 V 6.0 Amp High Current Glass Passivated Molding Single-Phase Bridge Rectifier Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free and RoHS Compliant GBU FEATURES       


    Original     		PDF E231047 03-Aug-2010 6B bRIDGE Rectifier E231047

    d4kb

    Abstract: BRIDGE-RECTIFIER small package
    Text: D4KB10 ~ D4KB100 100 ~ 1000 V 4.0 Amp High Current Glass Passivated Molding Single-Phase Bridge Rectifier Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free and RoHS Compliant FEATURES      Plastic Package has Underwriters


    Original     		PDF D4KB10 D4KB100 03-Aug-2010 d4kb BRIDGE-RECTIFIER small package

    Untitled

    Abstract: No abstract text available
    Text: STODD01 Monolithic power management for high definition ODD with true shut-down, reset, and programmable step-up voltage Features • 1.2 MHz DC-DC current mode PWM converter ■ Dual step-down of up to 800 mA ■ Single step-up of up to 700 mA ■ 2 % DC output voltage tolerance for step-down


    Original     		PDF STODD01 QFN16L

    GRM21BR61A106KE19L

    Abstract: GRM32ER61C226KE20L LPS4018-332MLB LPS6225-472MLB QFN16L swire 76533 ua731
    Text: STODD01 Monolithic power management for high definition ODD with true shut-down, reset, and programmable step-up voltage Features • 1.2 MHz DC-DC current mode PWM converter ■ Dual step-down of up to 800 mA ■ Single step-up of up to 700 mA ■ 2 % DC output voltage tolerance for step-down


    Original     		PDF STODD01 QFN16L GRM21BR61A106KE19L GRM32ER61C226KE20L LPS4018-332MLB LPS6225-472MLB QFN16L swire 76533 ua731

    STAC4932

    Abstract: STAC4932B 1715-3
    Text: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10% ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC4932B 2002/95/EC STAC244B STAC4932B STAC4932 1715-3

    D2KB80

    Abstract: BRIDGE-RECTIFIER small package
    Text: D2KB10 ~ D2KB100 100 ~ 1000 V 2.0 Amp High Current Glass Passivated Molding Single-Phase Bridge Rectifier Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free and RoHS Compliant FEATURES      Plastic Package has Underwriters


    Original     		PDF D2KB10 D2KB100 03-Aug-2010 D2KB80 BRIDGE-RECTIFIER small package

    Untitled

    Abstract: No abstract text available
    Text: STAC4932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz • Pulse conditions: 1 msec - 10%


    Original     		PDF STAC4932B 2002/95/EC STAC244B STAC4932B DocID17153

    MEC 1300

    Abstract: 2x100mA STAC244F
    Text: STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10%


    Original     		PDF STAC4932F 2002/95/EC STAC244F STAC4932F STAC4932B MEC 1300 2x100mA

    STAC4932

    Abstract: No abstract text available
    Text: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions : 1 msec - 10% ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC4932B 2002/95/EC STAC244B STAC4932B STAC4932

    ua731

    Abstract: GRM21BR61A106KE19L GRM32ER61C226KE20L LPS4018-332MLB LPS6225-472MLB QFN16L STMicroelectronics smd DIODE marking code smd 8 pin marking ma AM07818v1
    Text: STODD01 Monolithic power management for high definition ODD with true shut-down, reset, and programmable step-up voltage Features • 1.2 MHz DC-DC current mode PWM converter ■ Dual step-down of up to 800 mA ■ Single step-up of up to 700 mA ■ 2 % DC output voltage tolerance for step-down


    Original     		PDF STODD01 QFN16L ua731 GRM21BR61A106KE19L GRM32ER61C226KE20L LPS4018-332MLB LPS6225-472MLB QFN16L STMicroelectronics smd DIODE marking code smd 8 pin marking ma AM07818v1

    016-1 SYL

    Abstract: AECQ100 ST662 ST662A ST662AB ST662ABD-TR ST662ABD-TRY ST662AC ST662ACD-TR
    Text: ST662AB ST662AC DC-DC converter from 5 V to 12 V, 0.03 A for Flash memory programming supply Features • Output voltage: 12 V ± 5 % ■ Supply voltage range: 4.5 V to 5.5 V ■ Guaranteed output current up to 30 mA ■ Very low quiescent current: 100 µA


    Original     		PDF ST662AB ST662AC ST662A ST662AB 016-1 SYL AECQ100 ST662 ST662ABD-TR ST662ABD-TRY ST662AC ST662ACD-TR

    Untitled

    Abstract: No abstract text available
    Text: TH I S D R A W I NG IS UNPUBLI S H E D . C O P Y R I G H T 2010 RELEASED BY TYCO ELECTRONICS CORPORATION ROR ALL P U B L I C A T I ON RIGHTS LOC R E V I S I ONS D I ST RESERVED. D E S C R I RTION BA NEW RELEASE 03 AUG2010 St.P RT FOR FURTHER INFORMATION SEE D A T A SHEET FOR


    OCR Scan     		PDF 03AUG2010 03AUG2010